Bipolar Transistor

2SA2016 / 2SC5569
Ordering number : ENN6309B
2SA2016 / 2SC5569
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
•
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation.
Specifications ( ) : 2SA2016
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCES
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
IC
ICP
IB
(--)7
A
(--)10
A
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Mounted on a ceramic board (250mm2✕0.8mm)
Tc=25°C
(--)1.2
A
1.3
W
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
hFE
fT
Gain-Bandwidth Product
Conditions
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
Ratings
min
typ
max
200
Unit
(--)0.1
µA
(--)0.1
µA
560
(290)330
Marking : 2SA2016 : AW 2SC5569 : FF
MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62405EA MS IM TB-00001406 / 52501 TS KT TA-3259 No.6309-1/5
2SA2016 / 2SC5569
Continued from preceding page.
Parameter
Symbol
Output Capacitance
Cob
VBE(sat)
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)2A, IB=(--)40mA
IC=(--)10µA, IE=0A
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V(BR)CEO
IC=(--)100µA, RBE=0Ω
IC=(--)1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10µA, IC=0A
See specified Test Circuit.
Turn-On Time
ton
tstg
Storage Time
Fall Time
typ
tf
Unit
max
(50)28
IC=(--)3.5A, IB=(--)175mA
IC=(--)2A, IB=(--)40mA
VCE(sat)2
Base-to-Emitterr Saturation Voltage
min
VCB=(--)10V, f=1MHz
VCE(sat)1
Collector-to-Emitter Saturation Voltage
Ratings
Conditions
pF
(--230)160 (--390)240
mV
(--240)110 (--400)170
mV
(--)0.83
(--)1.2
V
(--50)100
V
(--50)100
V
(--)50
V
(--)6
V
(40)30
ns
See specified Test Circuit.
(225)420
ns
See specified Test Circuit.
25
ns
Package Dimensions
unit : mm
7008-003
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
Top View
INPUT
4.5
1.6
OUTPUT
IB2
RB
VR
RL
1.5
50Ω
+
470µF
2.5
1.0
1
2
4.0
+
100µF
VBE= --5V
IC=20IB1= --20IB2=2.5A
For PNP, the polarity is reversed.
3
0.4
VCC=25V
0.4
0.5
1.5
3.0
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
IC -- VCE
A
m
A
--50m
A
m
--40
--30mA
--5
A
0m
0
--1
--4
70mA
--20mA
--3
--10mA
--2
5
60mA
50mA
40mA
30mA
80
6
90mA
Collector Current, IC -- A
--6
IC -- VCE
7
--90mA
--80mA
--70mA
--60mA
20mA
4
3
100m
A
2SA2016
Collector Current, IC -- A
--7
10mA
2
1
--1
IB=0mA
0
0
--0.4
--0.8
--1.2
--1.6
Collector-to-Emitter Voltage, VCE -- V
--2.0
IT00206
0
0
IB=0mA
2SC5569
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
IT00207
No.6309-2/5
2SA2016 / 2SC5569
IC -- VBE
--5
--4
--3
--2
--1
--0.2
--0.4
--0.6
--0.8
--1.0
3
2
0
100
7
5
Ta=75°C
3
25°C
--25°C
2
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
10
0.01
5 7 --10
IT00210
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2SA2016
IC / IB=20
3
2
--100
7
5
5°C
Ta=7
°C
--25
3
2
25°C
--10
7
5
3
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
VCE(sat) -- IC
--10000
7
5
°C 25°
C
3
2
Ta
=
--2
5
--1000
7
5
°C
2SA2016
IC / IB=50
3
2
5°C
--100
7
5
7
Ta=
--10
--0.01
25°
--25°C
3
2
2
3
5 7 --0.1
2
C
3
5 7 --1.0
Collector Current, IC -- A
2
3
5 7 --10
IT00213
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT00211
VCE(sat) -- IC
1000
7
5
2SC5569
IC / IB=20
3
2
100
7
5
5°C
3
2
7
Ta=
C
25°
C
--25°
10
7
5
3
2
1.0
0.01
5 7 --10
IT00212
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10
IT00214
VCE(sat) -- IC
10000
7
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
75
--1.0
--0.01
2SC5569
VCE=2V
Collector Current, IC -- A
VCE(sat) -- IC
--1000
1.4
IT00209
5
2
5 7 --0.1
1.2
7
3
3
1.0
100
2
2
0.8
hFE -- IC
5
3
10
--0.01
0.6
7
DC Current Gain, hFE
Ta=75°C
25°C
--25°C
2
0.4
1000
5
3
0.2
Base-to-Emitter Voltage, VBE -- V
2SA2016
VCE= --2V
7
DC Current Gain, hFE
4
--1.2
--1.4
IT00208
hFE -- IC
1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
1
Base-to-Emitter Voltage, VBE -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
6
0
0
0
7
5
2SC5569
VCE=2V
7
Collector Current, IC -- A
--6
Ta=
75°
2 5 °C C
--25°
C
Collector Current, IC -- A
--7
IC -- VBE
8
2SA2016
VCE= --2V
Ta=7
5°C
25°C
--25°
C
--8
2SC5569
IC / IB=50
3
2
1000
7
5
3
2
100
7
5
5°C
Ta=7
C
--25°
3
2
10
0.01
2
3
5 7 0.1
2
3
C
25°
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
IT00215
No.6309-3/5
2SA2016 / 2SC5569
VBE(sat) -- IC
2SA2016
IC / IB=50
7
5
3
2
--1000
Ta= --25°C
7
75°C
5
25°C
3
2
--100
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7
5
3
2
10
7
5
3
2
2
3
5 7 --1.0
2
3
5 7 --10
2
Collector-to-Base Voltage, VCB -- V
Ta= --25°C
7
75°C
5
25°C
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT00217
Cob -- VCB
2SC5569
f=1MHz
2
100
7
5
3
2
10
7
5
5 7 0.1
5
2
3
5 7 1.0
2
100
7
5
3
2
5 7 10
2
10
3
5
IT00219
2SC5569
VCE=10V
7
Gain-Bandwidth Product, f T -- MHz
3
3
f T -- IC
1000
5
2
Collector-to-Base Voltage, VCB -- V
IT00218
2SA2016
VCE= --10V
7
Gain-Bandwidth Product, f T -- MHz
3
f T -- IC
1000
5
3
2
100
7
5
3
2
10
5 7--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Collector Current, IC -- A
5 7 0.01
5 7 --10
1.0
7
5
s
DC
op
era
tio
n
3
2
2SA2016 / 2SC5569
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
Collector Dissipation, PC -- W
s
ms
0µ
10
10
IC=7A
3
2
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT00221
PC -- Ta
2.0
100ms
1m
3
Collector Current, IC -- A
ASO
ICP=10A
2
IT00220
s
0µ
50
Collector Current, IC -- A
1000
3
2
5 7 --0.1
3
2
2
3
100
0.1
7
5
3
5
2SA2016
f=1MHz
2
10
7
5
5
Collector Current, IC -- A
Cob -- VCB
3
2
2SC5569
IC / IB=50
7
100
0.01
5 7 --10
IT00216
Collector Current, IC -- A
5
VBE(sat) -- IC
10000
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
--10000
2SA2016 / 2SC5569
1.5
1.3
M
ou
nte
do
na
1.0
ce
ram
ic
bo
ard
(25
0m
0.5
m2
✕0
.8m
m)
0
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 100
IT00222
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00223
No.6309-4/5
2SA2016 / 2SC5569
PC -- Tc
4.0
2SA2016 / 2SC5569
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT01535
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
PS No.6309-5/5
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