DG201BMIL, DG202BMIL Datasheet

DG201BMIL, DG202BMIL
www.vishay.com
Vishay Siliconix
Improved Quad CMOS Analog Switches
DESCRIPTION
FEATURES
The DG201B, DG202B analog switches are highly improved
versions of the industry-standard DG201A, DG202. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
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These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG201B and DG202B
can handle up to ± 22 V input signals, and have an improved
continuous current rating of 30 mA. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply voltages in the
off condition.
The DG201B is a normally closed switch and the DG202B is
a normally open switch. (see Truth Table.)
± 22 V supply voltage rating
TTL and CMOS compatible logic
Low on-resistance - RDS(on): 45 
Low leakage - ID(on): 20 pA
Single supply operation possible
Extended temperature range
Fast switching - tON: 120 ns
Low glitching - Q: 1 pC
BENEFITS
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Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG201A, DG202
APPLICATIONS
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Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
Hi-Rel systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG201B/DG202B
LCC
DG201B/DG202B
Dual-In-Line, CerDIP
IN1
1
16
IN2
D1
2
15
D2
S1
3
14
S2
V-
4
13
V+
GND
5
12
NC
S4
6
11
S3
D4
7
10
D3
IN4
8
9
IN3
Top View
TRUTH TABLE
Logic
DG201B
DG202B
0
On
Off
1
Off
On
Notes
• Logic “0”  0.8 V
• Logic “1”  2.4 V
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
1
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DG201BMIL, DG202BMIL
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ORDERING INFORMATION (Hi-Rel)
PART
CONFIGURATION
TEMP. RANGE
PACKAGE
16-pin CerDIP
DG201B
SPST x 4, NC
- 55 °C to 125 °C
LCC-20
16-pin CerDIP
DG202B
SPST x 4, NO
ORDERING PART
GENERIC
DSCC NUMBER
DG201BAK
DG201BAK
-
DG201BAK-E3
DG201BAK-E3
-
DG201BAK/883
DG201BAK/883
5962-8671604MEA
(Vishay qualified, DSCC
approval in progress)
DG201BAZ/883
DG201BAZ/883
5962-8671604M2A
(Vishay qualified, DSCC
approval in progress)
DG202BAK
DG202BAK
-
DG202BAK-E3
DG202BAK-E3
-
DG202BAK/883
DG202BAK/883
5962-8671605MEA
(Vishay qualified, DSCC
approval in progress)
DG202BAZ/883
DG202BAZ/883
5962-8671605M2A
(Vishay qualified, DSCC
approval in progress)
- 55 °C to 125 °C
LCC-20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltages Referenced to VGND
LIMIT
44
25
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
30
100
- 65 to 150
900
750
Digital Inputsa, VS, VD
Current (any terminal)
Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.)
Storage Temperature
(A suffix)
16-pin CerDIPc
b
Power Dissipation (Package)
LCC-20d
UNIT
V
mA
°C
mW
Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 12 mW/°C above 75 °C.
d. Derate 10 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (typical channel)
V+
5V
Reg
SX
Level
Shift/
Drive
INX
VV+
DX
GND
V-
Fig. 1
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
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DG201BMIL, DG202BMIL
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Vishay Siliconix
SPECIFICATIONSa
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
PARAMETER
SYMBOL
V+ = 15 V, V- = - 15 V
TEMP.b
TYP.c
VIN = 2.4 V, 0.8 Vf
A SUFFIX
- 55 °C to 125 °C
UNIT
MIN.d
MAX.d
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
RDS(on) Match
Source Off Leakage Current
VANALOG
RDS(on)
VD = ± 10 V, IS = 1 mA
RDS(on)
IS(off)
VS = ± 14 V, VD = ± 14 V
Drain Off Leakage Current
ID(off)
VS = ± 14 V, VD = ± 14 V
Drain On Leakage Current
ID(on)
VS = ± 14 V, VD = ± 14 V
Full
-
- 15
15
Room
45
-
85
Full
-
-
100
Room
2
-
-
Room
± 0.01
- 0.5
0.5
Full
-
- 20
20
Room
± 0.01
- 0.5
0.5
Full
-
- 20
20
Room
± 0.02
- 0.5
0.5
Full
-
- 40
40
V

nA
Digital Control
High Input Voltage
VINH
Full
-
2.4
-
Low Input Voltage
VINL
Full
-
-
0.8
Input Current
Input Capacitance
IINH or IINL
VINH or VINL
V
Full
-
-1
1
μA
Room
5
-
-
pF
Room
120
-
300
VS = 2 V
see switching time test circuit
Full
-
-
-
Room
65
-
200
Full
-
-
-
CL = 1000 pF, Vg = 0 V, Rg = 0 
Room
1
-
-
Room
5
-
-
Cin
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOff
Charge Injection
Q
Source Off Capacitance
CS(off)
Drain Off Capacitance
CD(off)
Room
5
-
-
Channel On Capacitance
CD(on)
VD = VS = 0 V, f = 1 MHz
Room
16
-
-
Off Isolation
OIRR
90
-
-
XTALK
CL = 15 pF, RL = 50 ,
VS = 1 VRMS, f = 100 kHz
Room
Channel-to-Channel Crosstalk
Room
95
-
-
VS = 0 V, f = 1 MHz
ns
pC
pF
dB
Power Supply
Positive Supply Current
I+
VIN = 0 V or 5 V
Negative Supply Current
I-
Power Supply Range for
Continuous Operation
VOP
S12-0631-Rev. A, 19-Mar-12
Room
-
-
50
Full
-
-
100
Room
-
-1
-
Full
-
-5
-
Full
-
± 4.5
± 22
μA
V
Document Number: 63374
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DG201BMIL, DG202BMIL
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SPECIFICATIONSa (Single Supply)
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
PARAMETER
SYMBOL
V+ = 12 V, V- = 0 V
TEMP.b
TYP.c
A SUFFIX
- 55 °C to 125 °C
UNIT
MIN.d
VIN = 2.4 V, 0.8 Vf
MAX.d
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
Full
-
0
12
V
Room
90
-
160
Full
-
-
200

RDS(on)
VD = 3 V, 8 V, IS = 1 mA
Turn-On Time
tON
120
-
300
tOFF
VS = 8 V
see switching time test circuit
Room
Turn-Off Time
Room
60
-
200
Q
CL = 1 nF, Vgen = 6 V, Rgen = 0 
Room
4
-
-
Room
-
-
50
Full
-
-
100
Room
-
-1
-
Full
-
-5
-
Full
-
4.5
25
Dynamic Characteristics
Charge Injection
ns
pC
Power Supply
Positive Supply Current
I+
Negative Supply Current
I-
Power Supply Range for
Continuous Operation
VOP
VIN = 0 V or 5 V
μA
V
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG201BMIL, DG202BMIL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
110
100
100
90
90
80
±5V
80
70
70
R DS(on) ()
R DS(on) ()
V+ = 15 V
V- = - 15 V
± 10 V
60
50
± 15 V
40
± 20 V
30
60
125 °C
50
85 °C
40
25 °C
30
- 55 °C
20
20
10
10
- 20 - 16 - 12
-8
-4
0
4
8
12
16
0
- 15
20
- 10
-5
0
5
10
15
VD - Drain Voltage (V)
VD - Drain Voltage (V)
RDS(on) vs. VD and Power Supply Voltages
RDS(on) vs. VD and Temperature
250
2.5
225
V+ = 5 V
200
2
150
7V
V TH (V)
RDS(on) ()
175
125
10 V
100
1.5
1
12 V
15 V
75
50
0.5
25
0
0
0
2
4
6
8
10
12
14
16
4
6
8
10
12
14
16
18
20
VD - Drain Voltage (V)
V+ Positive Supply (V)
RDS(on) vs. VD and Single Power Supply Voltages
Input Switching Threshold vs. Supply Voltage
80
60
1 nA
V+ = 15 V
V- = - 15 V
VS, V D = ± 14 V
V+ = 22 V
V- = - 22 V
TA = 25 °C
100 pA
20
0
- 20
I S, I D - Current
I S, I D - Current (pA)
40
IS(off), ID(off)
ID(on)
IS(off), ID(off)
10 pA
- 40
- 60
- 80
- 20
- 15
- 10
-5
0
5
10
15
Temperature (°C)
Leakage Currents vs. Analog Voltage
S12-0631-Rev. A, 19-Mar-12
20
1 pA
- 55
- 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Leakage Currents vs. Temperature
Document Number: 63374
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
500
400
V- = 0 V
400
Switching Time (ns)
Switching Time (ns)
300
300
200
ton
200
ton
100
100
toff
toff
0
2
4
6
8
10
12
14
16
18
0
20
0
±4
V+ - Positive Supply (V)
±8
± 12
± 16
± 20
V+, V- Positive and Negative Supplies (V)
Switching Time vs. Single Supply Voltage
Switching Time vs. Power Supply Voltage
120
30
V+ = 15 V
V- = - 15 V
110
20
OIRR (dB)
Q - Charge (pC)
100
10
V+ = 15 V
V- = - 15 V
0
V+ = 12 V
V- = 0 V
90
RL = 50
80
70
- 10
60
- 20
50
- 30
- 15
- 10
-5
0
5
10
40
10K
15
100K
1M
10M
f - Frequency (Hz)
VANALOG - Analog Voltage (V)
QS, QD - Charge Injection vs. Analog Voltage
Off Isolation vs. Frequency
I+ - Supply Current (mA)
4
3
2
1
0
1K
10K
100K
1M
f - Frequency (Hz)
Supply Current vs. Switching Frequency
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
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TEST CIRCUITS
+ 15 V
V+
S
VS = + 2 V
D
Logic
Input
VO
IN
tOFF
V-
GND
tr < 20 ns
tf < 20 ns
50 %
0V
CL
35 pF
RL
1k
3V
3V
90 %
Switch
Output
VO
tON
- 15 V
RL
VO = V S
RL + R DS(on)
Fig. 2 - Switching Time
+ 15 V
+ 15 V
C
C
V+
S
VS
S1
VS
V+
VO
D
D1
Rg = 50
50
IN1
Rg = 50
0 V, 2.4 V
0 V, 2.4 V
RL
IN
S2
VO
D2
NC
GND
V-
C
GND
- 15 V
V-
C
C = RF bypass
VS
Off Isolation = 20 log
RL
IN2
0 V, 2.4 V
XTALK Isolation = 20 log
VO
Fig. 3 - Off Isolation
VS
- 15 V
VO
Fig. 4 - Channel-to-Channel Crosstalk
+ 15 V
VO
Rg
VO
V+
S
D
IN
Vg
CL
1000 pF
3V
GND
VO
INX
ON
OFF
ON
VVO = measured voltage error due to charge injection
The charge injection in coulombs is Q = CL x VO
- 15 V
Fig. 5 - Charge Injection
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
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APPLICATIONS
+ 15 V
V+
Logic Input
Low = Sample
High = Hold
1k
+ 15 V
+ 15 V
- 15 V
-
J202
LM101A
VIN
+
2N4400
5M
50 pF
200
VOUT
5.1 M
1000 pF
DG201B
V-
J500
30 pF
J507
- 15 V
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
= 25 µs
= 1 µs
= 5 mV
= 5 mV/s
- 15 V
Fig. 6 - Sample-and-Hold
+ 15 V
160
V1
C4
fC3
Select
TTL
Control
150 pF
120
C3
1500 pF
Voltage Gain - dB
fC4
Select
C2
fC2
Select
0.015 µF
fC1
Select
0.15 µF
C1
80
fC1
fC2
fC3
fL1
0
V-
DG201B
fC4
40
fL2
fL3
fL4
GND
- 40
1
- 15 V
10
100
1K
- 15 V
R1 = 10 k
LM101A
+
R2 = 10 k
VOUT
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) =
2 R3CX
1M
Max. Attenuation =
R DS(on)
10 k
R3
R1
= 100 (40 dB)
1
2 R1CX
fL (Unity Gain Frequency) =
30 pF
100K
f - Frequency (Hz)
R3 = 1 M
+ 15 V
-
10K
≈
- 47 dB
Fig. 7 - Active Low Pass Filter with Digitally Selected Break Frequency
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
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VIN1
Vishay Siliconix
+5V
+ 15 V
30 pF
VL
V+
+ 15 V
+
LM101A
VIN2
-
+ 15 V
DG419
- 15 V
RF1
18 kW
RF1
9.9 kW
RF1
100 kW
RG1
2 kW
RG2
100 W
RG3
100 W
DG202B
CH
V-
GND
- 15 V
Gain =
Gain 1 (x1)
RF + RG
Gain 2 (x10)
RG
Gain 3 (x100)
Gain 4 (x1000)
V-
GND
Logic High = Switch On
Fig. 8 -A Precision Amplifier with Digitally Programable Input and Gains
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63374.
S12-0631-Rev. A, 19-Mar-12
Document Number: 63374
9
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Package Information
Vishay Siliconix
CERDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E1 E
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L1
L
e1
C
B
B1
MILLIMETERS
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
L1
Q1
S
∝
eA
INCHES
Min
Max
Min
Max
4.06
5.08
0.160
0.200
0.51
1.14
0.020
0.045
0.38
0.51
0.015
0.020
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
19.05
19.56
0.750
0.770
7.62
8.26
0.300
0.325
6.60
7.62
0.260
0.300
2.54 BSC
∝
0.100 BSC
7.62 BSC
0.300 BSC
3.18
3.81
0.125
0.150
3.81
5.08
0.150
0.200
1.27
2.16
0.050
0.085
0.38
1.14
0.015
0.045
0°
15°
0°
15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
Document Number: 71282
03-Jul-01
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1
Packaging Information
Vishay Siliconix
20ĆLEAD LCC
A1
D
L1
A
Dim
28
e
1
2
E
A
A1
B
D
E
e
L
L1
MILLIMETERS
Min
Max
INCHES
Min
Max
1.37
2.24
0.054
0.088
1.63
2.54
0.064
0.100
0.56
0.71
0.022
0.028
8.69
9.09
0.342
0.358
8.69
9.09
0.442
0.358
1.27 BSC
0.050 BSC
1.14
1.40
0.045
0.055
1.96
2.36
0.077
0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5321
L
Document Number: 71290
02-Jul-01
B
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000