Data Sheet

PESD5V0S1BA; PESD5V0S1BB;
PESD5V0S1BL
Low capacitance bidirectional ESD protection diodes
Rev. 04 — 20 August 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD
plastic packages designed to protect one signal line from the damage caused by ESD and
other transients.
Table 1.
Product overview
Type number
Package
NXP
JEITA
PESD5V0S1BA
SOD323
SC-76
PESD5V0S1BB
SOD523
SC-79
PESD5V0S1BL
SOD882
-
1.2 Features
n
n
n
n
Bidirectional ESD protection of one line
Max. peak pulse power: PPP = 130 W
Low clamping voltage: V(CL)R = 14 V
Ultra low leakage current: IRM = 5 nA
n
n
n
n
ESD protection > 30 kV
IEC 61000-4-2, level 4 (ESD)
IEC 61000-4-5 (surge); IPP = 12 A
Ultra small SMD plastic packages
1.3 Applications
n Cellular handsets and accessories
n Portable electronics
n Computers and peripherals
n Communication systems
n Audio and video equipment
1.4 Quick reference data
Table 2.
Quick reference data
Symbol
Parameter
VRWM
reverse stand-off voltage
Cd
diode capacitance
Conditions
VR = 0 V;
f = 1 MHz
Min
Typ
Max
Unit
-
-
5
V
-
35
45
pF
PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOD323, SOD523
1
cathode 1
2
cathode 2
1
2
1
2
sym045
001aab540
SOD882
1
cathode 1
2
cathode 2
1
2
1
2
sym045
Transparent
top view
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PESD5V0S1BA
SC-76
plastic surface mounted package; 2 leads
SOD323
PESD5V0S1BB
SC-79
plastic surface mounted package; 2 leads
SOD523
PESD5V0S1BL
-
leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.5 mm
SOD882
4. Marking
Table 5.
Marking codes
Type number
Marking code
PESD5V0S1BA
E6
PESD5V0S1BB
L7
PESD5V0S1BL
F1
PESD5V0S1BA_BB_BL_4
Product data sheet
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Rev. 04 — 20 August 2009
2 of 15
PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
PPP
peak pulse power
8/20 µs
IPP
peak pulse current
8/20 µs
Tj
Unit
[1][2]
-
130
W
[1][2]
-
12
A
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
Per diode
[1]
Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see
Figure 1.
[2]
Measured from pin 1 to pin 2.
Table 7.
ESD maximum ratings
Symbol Parameter
ESD
Conditions
electrostatic discharge
capability
IEC 61000-4-2 (contact
discharge)
[1][2]
HBM MIL-Std 883
Max
Unit
-
30
kV
-
10
kV
[1]
Measured from pin 1 to pin 2.
[2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.
Table 8.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2, level 4 (ESD); Figure 2
> 15 kV (air); > 8 kV (contact)
HBM MIL-STD 883; class 3
> 4 kV
PESD5V0S1BA_BB_BL_4
Product data sheet
Min
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 20 August 2009
3 of 15
PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
001aaa191
Ipp
mle218
120
100 %
90 %
100 % Ipp; 8 µs
Ipp
(%)
80
e−t
50 % Ipp; 20 µs
40
10 %
tr = 0.7 to 1 ns
0
0
Fig 1.
10
20
30
40
t (µs)
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
PESD5V0S1BA_BB_BL_4
Product data sheet
t
30 ns
© NXP B.V. 2009. All rights reserved.
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PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
5
V
-
5
100
nA
Per diode
VRWM
reverse stand-off voltage
IRM
reverse leakage current
VRWM = 5 V;
see Figure 6
V(CL)R
clamping voltage
IPP = 1 A
[1][2]
-
-
10
V
IPP = 12 A
[1][2]
-
-
14
V
V(BR)
breakdown voltage
IR = 1 mA
5.5
-
9.5
V
rdif
differential resistance
IR = 1 mA
-
-
50
Ω
Cd
diode capacitance
VR = 0 V; f = 1 MHz;
see Figure 5
-
35
45
pF
[1]
Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.
[2]
Measures from pin 1 to pin 2.
PESD5V0S1BA_BB_BL_4
Product data sheet
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Low capacitance bidirectional ESD protection diodes
001aaa202
103
001aaa193
1.2
PPP
PPP(25°C)
Ppp
(W)
0.8
102
0.4
10
1
102
10
103
0
104
0
50
100
150
t p (µs)
200
Tj (°C)
Tamb = 25 °C
Fig 3.
Peak pulse power dissipation as a function of
exponential time duration tp; typical values
001aaa203
38
Cd
(pF)
Fig 4.
Relative variation of peak pulse power as a
function of junction temperature; typical
values
001aaa204
102
IRM(Tj)
IRM(Tj =85°C)
34
10
30
1
26
10−1
22
0
1
2
3
4
75
5
VR (V)
100
125
Tj (°C)
150
Tamb = 25 °C; f = 1 MHz
Fig 5.
Diode capacitance as a function of reverse
voltage; typical values
Fig 6.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PESD5V0S1BA_BB_BL_4
Product data sheet
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PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
PESD5V0S1Bx
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
Fig 7.
vertical scale = 10 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
006aaa056
ESD clamping test setup and waveforms
PESD5V0S1BA_BB_BL_4
Product data sheet
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Low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from
the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may
be used on lines where the signal polarities are above and below ground. They provide a
surge capability of up to 130 W per line for a 8/20 µs waveform.
signal line
PESD5V0S1Bx
GND
006aaa057
Fig 8.
Bidirectional protection of one signal line
Circuit board layout and protection device placement:
Circuit board layout is critical for the suppression of ESD, EFT and surge transients.
The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protection conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESD5V0S1BA_BB_BL_4
Product data sheet
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Rev. 04 — 20 August 2009
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Low capacitance bidirectional ESD protection diodes
8. Package outline
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
v
HD
M
A
Q
1
2
bp
A
A1
(1)
c
Lp
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
HD
Lp
Q
v
mm
1.1
0.8
0.05
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
0.25
0.15
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOD323
Fig 9.
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
Package outline SOD323 (SC-76)
PESD5V0S1BA_BB_BL_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 20 August 2009
9 of 15
PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
Plastic surface-mounted package; 2 leads
SOD523
A
c
v M A
HE
A
D
1
E
0
0.5
1 mm
scale
2
DIMENSIONS (mm are the original dimensions)
bp
(1)
UNIT
A
bp
c
D
E
HE
v
mm
0.65
0.58
0.34
0.26
0.17
0.11
1.25
1.15
0.85
0.75
1.65
1.55
0.1
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOD523
JEITA
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
02-12-13
06-03-16
Fig 10. Package outline SOD523 (SC-79)
PESD5V0S1BA_BB_BL_4
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 04 — 20 August 2009
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PESD5V0S1BA/BB/BL
NXP Semiconductors
Low capacitance bidirectional ESD protection diodes
Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm
L
SOD882
L
1
2
b
e1
A
A1
E
D
(2)
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
D
E
e1
L
mm
0.50
0.46
0.03
0.55
0.47
0.62
0.55
1.02
0.95
0.65
0.30
0.22
Notes
1. Including plating thickness
2. The marking bar indicates the cathode
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
03-04-16
03-04-17
SOD882
Fig 11. Package outline SOD882
PESD5V0S1BA_BB_BL_4
Product data sheet
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Rev. 04 — 20 August 2009
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Low capacitance bidirectional ESD protection diodes
9. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
10000
PESD5V0S1BA
SOD323
4 mm pitch, 8 mm tape and reel
-115
-135
PESD5V0S1BB
SOD523
4 mm pitch, 8 mm tape and reel
-115
-135
PESD5V0S1BL
SOD882
4 mm pitch, 8 mm tape and reel
-
-315
[1]
For further information and the availability of packing methods, see Section 12.
PESD5V0S1BA_BB_BL_4
Product data sheet
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10. Revision history
Table 11.
Revision history
Document ID
Release date
PESD5V0S1BA_BB_BL_4 20090820
Modifications:
Data sheet status
Change notice
Supersedes
Product data sheet
-
PESD5V0S1BA_BB_BL_3
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
•
Table 3 “Pinning”: amended
Figure 9 “Package outline SOD323 (SC-76)”: updated
Figure 10 “Package outline SOD523 (SC-79)”: updated
PESD5V0S1BA_BB_BL_3 20041217
Product data sheet
-
PESD5V0S1BA_BB_BL_2
PESD5V0S1BA_BB_BL_2 20040802
Product data sheet
-
PESD5V0S1BA_1
PESD5V0S1BB_1
PESD5V0S1BA_1
20040322
Product specification
-
-
PESD5V0S1BB_1
20040304
Product specification
-
-
PESD5V0S1BA_BB_BL_4
Product data sheet
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11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD5V0S1BA_BB_BL_4
Product data sheet
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NXP Semiconductors
PESD5V0S1BA/BB/BL
Low capacitance bidirectional ESD protection diodes
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 August 2009
Document identifier: PESD5V0S1BA_BB_BL_4
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