MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMFDPower-Transistor,200V IPP120N20NFD DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMFDPower-Transistor,200V IPP120N20NFD 1Description TO-220-3 tab Features •N-channel,normallevel •FastDiode(FD)withreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Drain Pin 2, tab Table1KeyPerformanceParameters Parameter Value Unit VDS 200 V RDS(on),max 12 mΩ ID 84 A Type/OrderingCode Package IPP120N20NFD PG-TO220-3 1) Gate Pin 1 Source Pin 3 Marking 120N20NF RelatedLinks - J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 3 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings at 25 °C Parameter Symbol Continuous drain current Values Unit Note/TestCondition 84 60 A TC=25°C TC=100°C - 336 A TC=25°C - - 375 mJ ID=67A,RGS=25Ω dv/dt - - 60 kV/µs ID=160A,VDS=100V, di/dt=1500A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 300 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current 1) ID,pulse - Avalanche energy, single pulse EAS Reversediodepeakdv/dt 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.3 0.5 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 62 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area 2) - - 40 K/W - 1) See figure 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 4 V VDS=VGS,ID=270µA - 0.1 10 1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 10.6 12 mΩ VGS=10V,ID=84A Gate resistance RG - 2.4 3.6 Ω - Transconductance gfs 70 139 - S |VDS|>2|ID|RDS(on)max,ID=84A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 200 - Gate threshold voltage VGS(th) 2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 5000 6650 pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 400 532 pF VGS=0V,VDS=100V,f=1MHz Reverse transfer capacitance Crss - 6 13 pF VGS=0V,VDS=100V,f=1MHz Turn-on delay time td(on) - 13 - ns VDD=100V,VGS=10V,ID=42A, RG,ext=1.6Ω Rise time tr - 10 - ns VDD=100V,VGS=10V,ID=42A, RG,ext=1.6Ω Turn-off delay time td(off) - 24 - ns VDD=100V,VGS=10V,ID=42A, RG,ext=1.6Ω Fall time tf - 8 - ns VDD=100V,VGS=10V,ID=42A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 25 - nC VDD=100V,ID=84A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=100V,ID=84A,VGS=0to10V Switching charge Qsw - 17 - nC VDD=100V,ID=84A,VGS=0to10V Gate charge total Qg - 65 87 nC VDD=100V,ID=84A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=84A,VGS=0to10V Output charge Qoss - 162 - nC VDD=100V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD Table7Reversediode Parameter Symbol Values Unit Note/TestCondition 84 A TC=25°C - 336 A TC=25°C - - 160 A TC=25°C,diF/dt=1500A/µs VSD - 1 1.2 V VGS=0V,IF=84A,Tj=25°C Reverse recovery time trr - 144 288 ns VR=100V,IF=56A,diF/dt=100A/µs Reverse recovery charge Qrr - 629 - nC VR=100V,IF=56A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - IS,hard Diode forward voltage Diode continous forward current Diode pulse current 1) Diode hard commutation current 1) 2) 2) Diode pulse current is defined by thermal and/or package limits Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs Final Data Sheet 6 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 320 100 280 80 240 60 ID[A] Ptot[W] 200 160 40 120 80 20 40 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 100 10 1 µs 10 µs 100 µs 102 ZthJC[K/W] ID[A] 0.5 1 ms 101 10 ms 10-1 0.2 0.1 DC 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 200 20 175 10 V 150 4.5 V 15 7V 5V 5V RDS(on)[mΩ] ID[A] 125 100 75 4.5 V 50 7V 10 V 10 5 25 0 0 1 2 3 4 0 5 0 20 40 60 VDS[V] 80 100 120 140 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 180 180 160 160 140 140 120 gfs[S] ID[A] 120 100 100 80 80 60 60 40 40 175 °C 20 0 0 2 20 25 °C 4 6 8 0 0 25 VGS[V] 75 100 125 150 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 8 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 35 4.0 30 3.5 2700 µA 3.0 25 270 µA 20 VGS(th)[V] RDS(on)[mΩ] 2.5 98% 15 2.0 1.5 typ 10 1.0 5 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=84A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 25 °C 175 °C 25°C, 98% 175°C, 98% Coss 103 IF[A] C[pF] 102 102 Crss 101 101 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 25 °C 8 160 V 100 °C 100 V 6 40 V VGS[V] IAS[A] 125 °C 101 4 2 100 100 101 102 103 0 0 tAV[µs] 20 40 60 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=84Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 230 220 VBR(DSS)[V] 210 200 190 180 170 160 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD 6PackageOutlines Figure1OutlinePG-TO220-3,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2014-02-06 OptiMOSTMFDPower-Transistor,200V IPP120N20NFD RevisionHistory IPP120N20NFD Revision:2014-02-06,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-02-06 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.0,2014-02-06