BSC010N04LS

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
1Description
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Optimizedforsychronousrectification
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
1
2
7
6
5
5
3
4
4
3
2
6
7
8
1
S1
8D
S2
7D
Parameter
Value
Unit
VDS
40
V
S3
6D
RDS(on),max
1.0
mΩ
G4
5D
ID
100
A
Qoss
84
nC
Qg(0V..10V)
95
nC
Type/OrderingCode
Package
BSC010N04LS
TDSON-8 FL
1)
Marking
010N04LS
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
3
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
100
100
100
100
38
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
50
A
TC=25°C
EAS
-
-
330
mJ
ID=50A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
139
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.5
0.9
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.0
0.85
1.3
1.0
mΩ
VGS=4.5V,ID=50A
VGS=10V,ID=50A
Gate resistance1)
RG
-
0.8
1.6
Ω
-
Transconductance
gfs
140
270
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
6800
9520
pF
VGS=0V,VDS=20V,f=1MHz
Output capacitance
Coss
-
1900
2660
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance1)
Crss
-
160
320
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Rise time
tr
-
12
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Turn-off delay time
td(off)
-
46
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Fall time
tf
-
9
-
ns
VDD=20V,VGS=10V,ID=30A,
RG,ext,ext=1.6Ω
Input capacitance1)
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Unit
Note/TestCondition
-
nC
VDD=20V,ID=50A,VGS=0to10V
11
-
nC
VDD=20V,ID=50A,VGS=0to10V
-
15
21
nC
VDD=20V,ID=50A,VGS=0to10V
Qsw
-
21
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
95
133
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
49
69
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
84
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
84
118
nC
VDD=20V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
16
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
2)
2)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Values
Min.
Typ.
Max.
IS
-
-
100
A
TC=25°C
IS,pulse
-
-
400
A
TC=25°C
VSD
-
0.81
1
V
VGS=0V,IF=50A,Tj=25°C
Reverse recovery time
trr
-
36
72
ns
VR=20V,IF=50A,diF/dt=400A/µs
Reverse recovery charge
Qrr
-
50
-
nC
VR=20V,IF=50A,diF/dt=400A/µs
Diode forward voltage
2)
1)
2)
See ″Gate charge waveforms″ for parameter definition
Defined by design. Not subject to production test
Final Data Sheet
6
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
160
120
140
100
120
80
ID[A]
Ptot[W]
100
80
60
60
40
40
20
20
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
10 µs
102
1 µs
100
100 µs
0.5
ZthJC[K/W]
1 ms
ID[A]
160
TC[°C]
10 ms
1
10
DC
0.2
10
-1
0.1
0.05
0.02
0.01
100
10-1
10-1
10-2
100
101
102
10-3
single pulse
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
1.5
4.5 V
4V
350
3.2 V
5 V 3.5 V
3.5 V
3.2 V
10 V
300
4V
4.5 V
1.0
3V
200
2.8 V
150
5V
7V
RDS(on)[mΩ]
ID[A]
250
10 V
8V
0.5
100
50
0
0
1
0.0
2
0
20
40
VDS[V]
60
80
100
80
100
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
320
320
240
240
ID[A]
gfs[S]
400
160
160
150 °C
80
0
0
1
25 °C
80
2
3
4
5
0
0
VGS[V]
40
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
8
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
2.00
2.5
1.80
1.60
2.0
1.20
1.5
VGS(th)[V]
RDS(on)[mΩ]
1.40
max
1.00
typ
0.80
1.0
0.60
0.40
0.5
0.20
0.00
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
10
103
Ciss
25 °C
150 °C
25 °C, max
150 °C, max
Coss
IF[A]
102
C[pF]
103
Crss
102
101
180
Tj[°C]
101
0
10
20
30
40
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
9
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
20 V
10
8V
25 °C
100 °C
8
VGS[V]
125 °C
IAV[A]
32 V
101
6
4
2
100
100
101
102
103
0
0
20
tAV[µs]
40
60
80
100
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
46
44
42
VBR(DSS)[V]
40
38
36
34
32
30
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
6PackageOutlines
Figure1OutlineTDSON-8FL,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Figure2OutlineFootprintTDSON-8FL
Final Data Sheet
12
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
Figure3OutlineTDSON-8FLTape
Final Data Sheet
13
Rev.2.2,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSC010N04LS
RevisionHistory
BSC010N04LS
Revision:2014-06-27,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.2
2014-06-27
Rev. 2.2
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
14
Rev.2.2,2014-06-27
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