BSZ025N04LS Data Sheet

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
1Description
TSDSON-8FL
(enlarged source interconnection)
Features
•Optimizedforsynchronousrectification
•Verylowon-resistanceRDS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel,logiclevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
S1
8D
S2
7D
Parameter
Value
Unit
VDS
40
V
S3
6D
RDS(on),max
2.5
mΩ
G4
5D
ID
40
A
QOSS
33
nC
QG(0V..10V)
37
nC
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ025N04LS
PG-TSDSON-8 FL
025N04L
-
1)
J-STD20 and JESD22
Final Data Sheet
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Rev.2.1,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
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Rev.2.1,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
40
40
40
40
22
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
20
A
TC=25°C
EAS
-
-
130
mJ
ID=20A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.1
W
TC=25°C
TA=25°C,RthJA=60K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Continuous drain current
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area1)
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
K/W
-
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
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Rev.2.1,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
2.4
2.0
3.2
2.5
mΩ
VGS=4.5V,ID=20A
VGS=10V,ID=20A
Gate resistance1)
RG
-
1.1
2.2
Ω
-
Transconductance
gfs
55
110
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
2630
3680
pF
VGS=0V,VDS=20V,f=1MHz
Output capacitance
Coss
-
750
1050
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance1)
Crss
-
60
120
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
6
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Rise time
tr
-
7
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Turn-off delay time
td(off)
-
27
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Fall time
tf
-
5
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext,ext=1.6Ω
Input capacitance1)
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
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Rev.2.1,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Unit
Note/TestCondition
-
nC
VDD=20V,ID=20A,VGS=0to10V
4.2
-
nC
VDD=20V,ID=20A,VGS=0to10V
-
6.0
8.4
nC
VDD=20V,ID=20A,VGS=0to10V
Qsw
-
8.1
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
37
52
nC
VDD=20V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
19
27
nC
VDD=20V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
32
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
33
46
nC
VDD=20V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
6.3
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
2)
2)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
2)
Reverse recovery time
2)
Reverse recovery charge
1)
2)
Values
Min.
Typ.
Max.
IS
-
-
40
A
TC=25°C
IS,pulse
-
-
160
A
TC=25°C
VSD
-
0.8
1
V
VGS=0V,IF=20A,Tj=25°C
trr
-
24
48
ns
VR=20V,IF=20A,diF/dt=400A/µs
Qrr
-
20
-
nC
VR=20V,IF=20A,diF/dt=400A/µs
See ″Gate charge waveforms″ for parameter definition
Defined by design. Not subject to production test
Final Data Sheet
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
50
70
40
60
30
ID[A]
Ptot[W]
50
40
20
30
20
10
10
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
102
10 µs
100
1 µs
0.5
0.2
ZthJC[K/W]
100 µs
ID[A]
160
TC[°C]
1 ms
101
10 ms
DC
0.1
0.05
10-1
0.02
0.01
single pulse
0
10
10-1
10-1
10
100
101
102
-2
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Diagram5:Typ.outputcharacteristics
160
5V
10 V
4.5 V
140
Diagram6:Typ.drain-sourceonresistance
5
4V
3.5 V
3.2 V
2.8 V
3V
4
120
3.2 V
3V
RDS(on)[mΩ]
ID[A]
100
80
2.8 V
60
3.5 V
3
4V
4.5 V
5V
2
10 V
40
1
20
0
0.0
0.2
0.4
0.6
0.8
0
1.0
0
40
VDS[V]
80
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
160
120
120
gfs[S]
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
80
40
160
30
40
80
40
150 °C
0
120
ID[A]
0
1
2
25 °C
3
4
0
0
VGS[V]
20
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
10
gfs=f(ID);Tj=25°C
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Rev.2.1,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
5
2.5
4
2.0
1.5
VGS(th)[V]
RDS(on)[mΩ]
3
max
2
typ
1
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25 °C max
150 °C max
Ciss
Coss
102
Crss
102
IF[A]
C[pF]
103
101
0
10
20
101
30
40
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
20 V
10
8V
32 V
25 °C
101
VGS[V]
IAV[A]
8
100 °C
125 °C
6
4
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
46
44
42
VBR(DSS)[V]
40
38
36
34
32
30
-60
-20
20
60
100
140
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
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OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.1,2014-06-27
OptiMOSTMPower-MOSFET,40V
BSZ025N04LS
RevisionHistory
BSZ025N04LS
Revision:2014-06-27,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-06-27
Rev. 2.1
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©2014InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.1,2014-06-27