Data Sheet

PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
The devices may also be used for unidirectional ESD protection of up to two signal lines.
Table 1.
Product overview
Type number
Package
Package configuration
NXP
JEDEC
PESD5V0X1BQ
SOT663
-
ultra small and flat lead
PESD5V0X1BT
SOT23
TO-236AB
very small
1.2 Features
n Bidirectional ESD protection of one line n ESD protection up to 9 kV
n Unidirectional ESD protection of up to
n IEC 61000-4-2; level 4 (ESD)
two lines
n Ultra low diode capacitance: Cd = 0.9 pF n AEC-Q101 qualified
n Very low leakage current: IRM = 1 nA
1.3 Applications
n USB interfaces
n
n
n
n
n
Antenna protection
Radio Frequency (RF) protection
10/100/1000 Mbit/s Ethernet
FireWire
Asymmetric Digital Subscriber Line
(ADSL)
n High-speed data lines
n Subscriber Identity Module (SIM) card
protection
n Computers, peripherals and printers
n Cellular handsets and accessories
n Portable electronics
n Communication systems
n Audio and video equipment
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff voltage
Cd
diode capacitance
f = 1 MHz; VR = 0 V
-
-
5
V
[1]
-
0.9
1.3
pF
[2]
-
2
2.6
pF
[1]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2]
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
PESD5V0X1BQ
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
3
3
1
2
1
2
006aaa154
PESD5V0X1BT
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
3
1
3
2
1
2
006aaa154
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PESD5V0X1BQ
-
plastic surface-mounted package; 3 leads
SOT663
PESD5V0X1BT
-
plastic surface-mounted package; 3 leads
SOT23
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
2 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PESD5V0X1BQ
E6
PESD5V0X1BT
U3*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
-
9
kV
-
10
kV
Per diode
VESD
MIL-STD-883 (human
body model)
[1]
[1]
Device stressed with ten non-repetitive ESD pulses.
Table 8.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
3 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
001aaa631
IPP
100 %
90 %
10 %
t
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 1.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per diode
VRWM
reverse standoff
voltage
-
-
5
V
IRM
reverse leakage current VRWM = 5 V
-
1
100
nA
VBR
breakdown voltage
IR = 5 mA
5.8
7.5
9.5
V
Cd
diode capacitance
f = 1 MHz
[1]
-
0.9
1.3
pF
[2]
-
2
2.6
pF
[1]
-
0.8
1.2
pF
[2]
-
1.7
2.3
pF
-
-
100
Ω
VR = 0 V
VR = 5 V
rdif
differential resistance
IR = 1 mA
[1]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2]
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
4 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
006aab249
1.0
Cd
(pF)
006aab348
2.0
Cd
(pF)
0.96
1.9
0.92
1.8
0.88
1.7
0.84
1.6
0.80
0
1
2
3
4
5
0
1
2
3
4
VR (V)
Fig 2.
5
VR (V)
bidirectional configuration
unidirectional configuration
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
I
IPP
−VCL −VBR −VRWM
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
V
−IRM
−IR
VRWM VBR VCL
−
−
+
−IPP
−IPP
006aaa676
Fig 4.
V-I characteristics for a bidirectional
ESD protection diode
006aaa407
Fig 5.
V-I characteristics for a unidirectional
ESD protection diode
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
+
P-N
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
5 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
ESD TESTER
450 Ω
RZ
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 20 V/div
horizontal scale = 100 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 6.
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab336
ESD clamping test setup and waveforms
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
6 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional
data or signal line from the damage caused by ESD. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two
unidirectional data or signal lines, which have positive signal polarities with respect to
ground.
line 1 to be protected
line 1 to be protected
line 2 to be protected
DUT
GND
bidirectional protection
of one line
DUT
GND
unidirectional protection
of two lines
006aab252
Fig 7.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
7 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
9. Package outline
1.7
1.5
0.6
0.5
3.0
2.8
3
1.1
0.9
3
0.3
0.1
1.7
1.5
0.45
0.15
2.5 1.4
2.1 1.2
1.3
1.1
1
1
2
0.33
0.23
0.5
2
0.18
0.08
1
Dimensions in mm
Fig 8.
Dimensions in mm
02-05-21
Package outline PESD5V0X1BQ (SOT663)
0.48
0.38
1.9
Fig 9.
0.15
0.09
04-11-04
Package outline
PESD5V0X1BT (SOT23/TO-236AB)
10. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
PESD5V0X1BQ
SOT663
PESD5V0X1BT
SOT23
[1]
Description
Packing quantity
3000
4000
8000
10000
2 mm pitch, 8 mm tape and reel
-
-
-315
-
4 mm pitch, 8 mm tape and reel
-
-115
-
-
4 mm pitch, 8 mm tape and reel
-215
-
-
-235
For further information and the availability of packing methods, see Section 14.
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
8 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
11. Soldering
2.45
1.9
1.6
solder lands
0.5 0.55 0.6
(3×) (3×) (3×)
placement area
2
1
0.8
solder paste
occupied area
Dimensions in mm
1.65
0.5
(3×)
0.55
(3×)
sot663_fr
Reflow soldering is the only recommended soldering method.
Fig 10. Reflow soldering footprint PESD5V0X1BQ (SOT663)
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 11. Reflow soldering footprint PESD5V0X1BT (SOT23/TO-236AB)
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
9 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 12. Wave soldering footprint PESD5V0X1BT (SOT23/TO-236AB)
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
10 of 13
PESD5V0X1BQ; PESD5V0X1BT
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diodes
12. Revision history
Table 11.
Revision history
Document ID
Release date
PESD5V0X1BQ_PESD5V0X1BT_1 20081030
Data sheet status
Change notice
Supersedes
Product data sheet
-
-
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
11 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 30 October 2008
12 of 13
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 October 2008
Document identifier: PESD5V0X1BQ_PESD5V0X1BT_1
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