Data Sheet

PESD36VS2UT
Low capacitance unidirectional double ESD protection diode
Rev. 01 — 16 July 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in
a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to
protect up to two signal lines from the damage caused by ESD and other transients.
1.2 Features
n Unidirectional ESD protection of
two lines
n Low diode capacitance: Cd = 17 pF
n Max. peak pulse power: PPP = 160 W
n Low clamping voltage: VCL = 55 V
n Ultra low leakage current: IRM ≤ 1 µA
n ESD protection up to 30 kV
n IEC 61000-4-2; level 4 (ESD)
n IEC 61000-4-5 (surge); IPP = 2.5 A
n AEC-Q101 qualified
1.3 Applications
n
n
n
n
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Subscriber Identity Module (SIM) card
protection
n Portable electronics
n Communication systems
n 10/100 Mbit/s Ethernet
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
36
V
f = 1 MHz; VR = 0 V
-
17
35
pF
Per diode
VRWM
reverse standoff voltage
Cd
diode capacitance
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa154
3. Ordering information
Table 3.
Ordering information
Type number
PESD36VS2UT
Package
Name
Description
Version
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PESD36VS2UT
LF*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
peak pulse power
tp = 8/20 µs
peak pulse current
tp = 8/20 µs
Min
Max
Unit
[1][2]
-
160
W
[1][2]
-
2.5
A
Per diode
PPP
IPP
Per device
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 or 2 to pin 3.
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
2 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
Table 6.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
Min
Max
Unit
[1][2]
-
30
kV
[2]
-
400
V
-
8
kV
Per diode
VESD
machine model
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to pin 2.
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
8/20 µs pulse waveform according to
IEC 61000-4-5
60 ns
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
3 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
-
-
36
V
-
< 0.02
1
µA
Per diode
VRWM
reverse standoff voltage
IRM
reverse leakage current
VRWM = 30 V
VBR
breakdown voltage
IR = 5 mA
Cd
diode capacitance
f = 1 MHz;
VR = 0 V
VCL
clamping voltage
IPP = 1 A
rdif
differential resistance
IR = 0.5 mA
40
44
-
V
[1]
-
17
35
pF
[1][2]
-
55
60
V
-
-
300
Ω
[1]
Measured from pin 1 or 2 to pin 3.
[2]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
006aab615
20
Cd
(pF)
15
10
5
0
0
10
20
30
40
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
4 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
I
IPP
−VCL −VBR −VRWM
V
−IRM
−IR
−
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
+
P-N
−
−IPP
+
−IPP
006aaa676
006aaa407
Measured from pin 1 or 2 to pin 3.
Fig 4.
V-I characteristics for a unidirectional
ESD protection diode
Measured from pin 1 to pin 2.
Fig 5.
V-I characteristics for a bidirectional
ESD protection diode
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
5 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
ESD TESTER
450 Ω
RZ
RG 223/U
50 Ω coax
10×
ATTENUATOR
4 GHz DIGITAL
OSCILLOSCOPE
50 Ω
CZ
note 1
Note 1: IEC61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT: PESD36VS2UT
vertical scale = 200 V/div
horizontal scale = 50 ns/div
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
GND
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 50 ns/div
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
006aab616
Fig 6.
ESD clamping test setup and waveforms
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
6 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
7. Application information
The PESD36VS2UT is designed for the protection of up to two unidirectional data or
signal lines from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD36VS2UT provides a surge capability of 160 W per line for an 8/20 µs
waveform.
line 1 to be protected
line 1 to be protected
line 2 to be protected
PESD36VS2UT
GND
unidirectional protection
of two lines
PESD36VS2UT
GND
bidirectional protection
of one line
006aab617
Fig 7.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
7 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
1.9
0.48
0.38
Dimensions in mm
Fig 8.
0.15
0.09
04-11-04
Package outline PESD36VS2UT (SOT23/TO-236AB)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD36VS2UT
[1]
Package
SOT23
Description
4 mm pitch, 8 mm tape and reel
3000
10000
-215
-135
For further information and the availability of packing methods, see Section 14.
PESD36VS2UT_1
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
8 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
3
2
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
Fig 9.
sot023_fr
Reflow soldering footprint PESD36VS2UT (SOT23/TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 10. Wave soldering footprint PESD36VS2UT (SOT23/TO-236AB)
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
9 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD36VS2UT_1
20090716
Product data sheet
-
-
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
10 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD36VS2UT_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 July 2009
11 of 12
PESD36VS2UT
NXP Semiconductors
Low capacitance unidirectional double ESD protection diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 July 2009
Document identifier: PESD36VS2UT_1
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