Data Sheet

PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 11 March 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diodes
in a very small Surface-Mounted Device (SMD) plastic package designed to protect up to
two signal lines from the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
PESD5V0L2UU
Package
Package configuration
NXP
JEITA
SOT323
SC-70
very small
PESD6V0L2UU
1.2 Features
n Unidirectional ESD protection of up to
two lines
n Low diode capacitance: Cd = 34 pF
n Max. peak pulse power: PPP = 70 W
n Low clamping voltage: VCL = 13 V
n Ultra low leakage current
n ESD protection up to 30 kV
n IEC 61000-4-2; level 4 (ESD)
n IEC 61000-4-5 (surge); IPP = 6.5 A
n AEC-Q101 qualified
1.3 Applications
n Audio and video equipment
n Computers and peripherals
n Cellular handsets and accessories
n Communication systems
n Portable electronics
n Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
Conditions
Min
Typ
Max
Unit
PESD5V0L2UU
-
-
5.0
V
PESD6V0L2UU
-
-
6.0
V
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
Table 2.
Quick reference data …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Cd
diode capacitance
f = 1 MHz; VR = 0 V
PESD5V0L2UU
PESD6V0L2UU
Min
Typ
Max
Unit
[1]
-
19
23
pF
[2]
-
38
46
pF
[1]
-
17
20
pF
[2]
-
34
40
pF
[1]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2]
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
2. Pinning information
Table 3.
Pinning
Pin
Description
1
cathode (diode 1)
2
cathode (diode 2)
3
common anode
Simplified outline
Graphic symbol
3
1
3
2
1
2
006aaa154
3. Ordering information
Table 4.
Ordering information
Type number
PESD5V0L2UU
Package
Name
Description
Version
SC-70
plastic surface-mounted package; 3 leads
SOT323
PESD6V0L2UU
4. Marking
Table 5.
Marking codes
Type number
Marking code[1]
PESD5V0L2UU
H1*
PESD6V0L2UU
H2*
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
2 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
peak pulse power
tp = 8/20 µs
-
70
W
-
60
W
PESD5V0L2UU
-
6.5
A
PESD6V0L2UU
-
5.5
A
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−55
+150
°C
Tstg
storage temperature
−65
+150
°C
Per diode
PPP
[1][2]
PESD5V0L2UU
PESD6V0L2UU
peak pulse current
IPP
tp = 8/20 µs
[1][2]
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 or 2 to pin 3.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
VESD
Parameter
Conditions
electrostatic discharge voltage
Min
Max
Unit
IEC 61000-4-2
(contact discharge)
[1]
-
30
kV
MIL-STD-883 (human
body model)
[2]
-
16
kV
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 or 2 to pin 3.
Table 8.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
3 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
8/20 µs pulse waveform according to
IEC 61000-4-5
60 ns
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
4 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
IRM
VBR
Cd
Conditions
Min
Typ
Max
Unit
PESD5V0L2UU
-
-
5.0
V
PESD6V0L2UU
-
-
6.0
V
reverse leakage current
PESD5V0L2UU
VRWM = 4.0 V
-
20
90
nA
PESD6V0L2UU
VRWM = 4.3 V
-
1.5
18
nA
PESD5V0L2UU
VRWM = 5.0 V
-
430
-
nA
PESD6V0L2UU
VRWM = 6.0 V
-
310
-
nA
PESD5V0L2UU
5.8
6.2
6.6
V
PESD6V0L2UU
6.4
6.8
7.2
V
[1]
-
19
23
pF
[2]
-
38
46
pF
[1]
-
17
20
pF
[2]
-
34
40
pF
PESD5V0L2UU
-
-
13
V
PESD6V0L2UU
-
-
13.5
V
PESD5V0L2UU
-
-
25
Ω
PESD6V0L2UU
-
-
30
Ω
breakdown voltage
diode capacitance
IR = 5 mA
f = 1 MHz; VR = 0 V
PESD5V0L2UU
PESD6V0L2UU
VCL
rdif
clamping voltage
differential resistance
IPP = 5.5 A
IR = 5 mA
[1]
Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2]
Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
[3]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[4]
Measured from pin 1 or 2 to pin 3.
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
[3][4]
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
5 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
006aab435
40
006aab436
40
Cd
(pF)
Cd
(pF)
30
30
(1)
(1)
20
20
(2)
(2)
10
10
0
0
0
2
4
6
0
2
4
6
VR (V)
VR (V)
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
(1) unidirectional
(1) unidirectional
(2) bidirectional
(2) bidirectional
Fig 3.
PESD5V0L2UU: Diode capacitance as a
function of reverse voltage; typical values
Fig 4.
PESD6V0L2UU: Diode capacitance as a
function of reverse voltage; typical values
I
IPP
−VCL −VBR −VRWM
V
−IRM
−IR
−
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
+
P-N
−
−IPP
+
−IPP
006aaa676
006aaa407
Fig 5.
V-I characteristics for a unidirectional
ESD protection diode
Fig 6.
V-I characteristics for a bidirectional
ESD protection diode
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
6 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
ESD TESTER
450 Ω
RZ
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
GND
GND
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 7.
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aab437
PESD5V0L2UU: ESD clamping test setup and waveforms
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
7 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
7. Application information
PESD5V0L2UU and PESD6V0L2UU are designed for the protection of up to two
unidirectional data or signal lines, or for the protection of one bidirectional data or signal
line, from the damage caused by ESD. For unidirectional protection, the devices may be
used on lines where the signal polarities are positive with respect to ground, and for
bidirectional protection, the devices may be used on lines where the signal polarities are
both, positive and negative with respect to ground.
For an 8/20 µs waveform, the PESD5V0L2UU provides a surge capability of up to 70 W
per line, and the PESD6V0L2UU provides a surge capability of up to 60 W per line.
line 1 to be protected
line 1 to be protected
line 2 to be protected
DUT
GND
bidirectional protection
of one line
DUT
GND
unidirectional protection
of two lines
006aab252
Fig 8.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the devices as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
8 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
Fig 9.
04-11-04
Package outline SOT323 (SC-70)
10. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
PESD5V0L2UU
Package
SOT323
Description
4 mm pitch, 8 mm tape and reel
Packing quantity
3000
10000
-115
-135
PESD6V0L2UU
[1]
For further information and the availability of packing methods, see Section 14.
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
9 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
11. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
2.35
0.6
(3×)
3
solder paste
1.3
1
occupied area
0.5
(3×)
Dimensions in mm
0.55
(3×)
sot323_fr
Fig 10. Reflow soldering footprint SOT323 (SC-70)
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
09
(2×)
Dimensions in mm
preferred transport
direction during soldering
sot323_fw
Fig 11. Wave soldering footprint SOT323 (SC-70)
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
10 of 13
PESD5V0L2UU; PESD6V0L2UU
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
12. Revision history
Table 11.
Revision history
Document ID
Release date
PESD5V0L2UU_PESD6V0L2UU_1 20090311
Data sheet status
Change notice
Supersedes
Product data sheet
-
-
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
11 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
ESD protection devices — These products are only intended for protection
against ElectroStatic Discharge (ESD) pulses and are not intended for any
other usage including, without limitation, voltage regulation applications. NXP
Semiconductors accepts no liability for use in such applications and therefore
such use is at the customer’s own risk.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD5V0L2UU_PESD6V0L2UU_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 11 March 2009
12 of 13
NXP Semiconductors
PESD5V0L2UU; PESD6V0L2UU
Low capacitance unidirectional ESD protection diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Quality information . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 March 2009
Document identifier: PESD5V0L2UU_PESD6V0L2UU_1
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