4756

SHD114613
SHD114613A
SHD114613B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4756, REV. B
POWER SCHOTTKY RECTIFIER
Very Low Reverse Leakage
Applications:
 Switching Power Supply  Converters  Free-Wheeling Diodes  Polarity Protection Diode
Features:







Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance (per
leg)
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
RthJC
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 s
 limited by TJ max VA=1.5VR
Per Package
Max.
60
120
Units
V
A
1650
A
27
mJ
1.3
A
0.38
C/W
TJ
Tstg
-
-65 to +175
-65 to +175
C
C
Symbol
VF1
Condition
@ 120A, Pulse, TJ = 25 C
(per leg) measured at the leads
@ 120A, Pulse, TJ = 125 C
(per leg) measured at the leads
@VR = 60V, Pulse,
TJ = 25 C (per leg)
@VR = 60V, Pulse,
TJ = 125 C (per leg)
@VR = 5 V, TC = 25 C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Max.
0.70
Units
V
0.67
V
11
mA
840
mA
4800
pF
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
VF2
Max. Reverse Current
IR1
IR2
Max. Junction Capacitance
CT
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD114613
SHD114613A
SHD114613B
SENSITRON
TECHNICAL DATA
DATA SHEET 4756, REV. B
Mechanical Dimensions: in inches / mm
.560±.020
.550±.020
(14.0±.508)
.410±.010
(10.4±.254)
(14.2±.508)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.200±.010
(5.08 ±.254)
.150±.010
(3.81±.254)
.410±.010
(10.4±.254)
.015±.005
(.381±.127)
.075 (1.91) Max
.020±.005 R
(.508±.127 )
Moly Lid
Copper Anode
.090 (2.29) Max
Alumina Ring
.020±.005 R
(.508±.127 )
.075 (1.91)
Max
Moly
Lid
.020±.002
(.508±.051)
Moly Base
(Cathode)
Alumina
Ring
Alumina Ring
.060±.010
(1.52±.254)
Moly Anode
Moly Base
(Cathode)
Moly
.015±.002
(.381±.051)
.060±.010
SHD-3
SHD
(1.52±.254)
SHD-3B
Typical Forward Characteristics
Typical Reverse Characteristics
Instantaneous Reverse Current - I R (mA)
103
102
150 °C
125 °C
101
100 °C
10
0
75 °C
10-1
50 °C
10-2
25 °C
125 °C
0
10
20
30
40
Reverse Voltage - VR (V)
50
Typical Junction Capacitance
Junction Capacitance - CT (pF)
Instantaneous Forward Current - I F (A)
175 °C
175 °C
102
25 °C
101
0.2
0.3
0.4
0.5
0.6
0.7
Forw ard Voltage Drop - V F (V)
0.8
5000
4000
3000
2000
1000
0
10
20
30
40
Reverse Voltage - VR (V)
Vf Curves shown are for die only.
2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
50
SHD114613
SHD114613A
SHD114613B
SENSITRON
TECHNICAL DATA
DATA SHEET 4756, REV. B
Typical Forward Characteristics
Typical Reverse Characteristics
(mA)
10 3
10 1
125 °C
10 2
125 °C
100 °C
10 1
75 °C
10 0
50 °C
10 -1
25 °C
10 -2
0
10
25 °C
20
30
40
Reverse Voltage - V R (V)
50
60
Typical Junction Capacitance
10 0
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I
F
(A)
Instantaneous Reverse Current - I
R
10 2
10 -1
0.0
0.2
0.4
0.6
Forw ard Voltage Drop - V F (V)
0.8
4500
4000
3500
3000
2500
2000
1500
0
10
20
30
40
50
Reverse Voltage - V R (V)
60
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
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equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
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a value exceeding the absolute maximum rating.
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2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681
PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]