4505

SHD114244
SHD114244A
SHD114244B
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4505, REV. A
POWER SCHOTTKY RECTIFIER
Low Reverse Leakage
Applications:
Switching Power Supply
Converters
Free-Wheeling Diodes
Polarity Protection Diode
Features:
Ultra Low Reverse Leakage Current
Soft Reverse Recovery at Low and High Temperature
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward
Current
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche
Energy
Repetitive Avalanche
Current
Thermal Resistance
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
IFSM
EAS
IAR
RthJC
TJ
Tstg
Condition
50% duty cycle, rectangular
wave form
8.3 ms, half Sine wave
(per leg)
TJ = 25 C, IAS = 1.3 A,
L = 40mH (per leg)
IAS decay linearly to 0 in 1 s
limited by TJ max VA=1.5VR
Per Package
-
Max.
100
15
Units
V
A
280
A
27
mJ
1.3
A
1.7
-65 to +175
-65 to +175
C/W
C
C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Symbol
VF1
Condition
Max.
Units
0.84
V
@ 15A, Pulse, TJ = 25 C
(per leg) measured at the leads
VF2
0.68
V
@ 15A, Pulse, TJ = 125 C
(per leg) measured at the leads
Max. Reverse Current
IR1
@VR = 100V, Pulse,
0.35
mA
TJ = 25 C (per leg)
IR2
@VR = 100V, Pulse,
8.0
mA
TJ = 125 C (per leg)
Max. Junction Capacitance
CT
600
pF
@VR = 5 V, TC = 25 C
fSIG = 1 MHz,
VSIG = 50mV (p-p) (per leg)
Due to the nature of the 100V Schottky devices, some degradation in trr performance at high temperatures should
be expected, unlike conventional lower voltage Schottkys.
©2003 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
SHD114244
SHD114244A
SHD114244B
SENSITRON
TECHNICAL DATA
DATA SHEET 4505, REV. A
Mechanical Dimensions: in inches / mm
.560±.020
.550±.020
(14.0±.508)
.410±.010
(10.4±.254)
(14.2±.508)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.410±.010
(10.4±.254)
.075 (1.91) Max
.200±.010
(5.08 ±.254)
Moly Lid
.150±.010
(3.81±.254)
.410±.010
(10.4±.254)
.015±.005
(.381±.127)
.020±.005 R
(.508±.127 )
Copper Anode
.020±.005 R
.090 (2.29) Max
Alumina Ring
(.508±.127 )
.075 (1.91)
Max
Moly
Lid
.020±.002
(.508±.051)
Moly Base
(Cathode)
Alumina
Ring
Alumina Ring
.060±.010
(1.52±.254)
Moly Anode
.015±.002
(.381±.051)
Moly Base
(Cathode)
Moly
.060±.010
SHD-3
SHD-3A
SHD-3B
Typical Forward Characteristics
Typical Reverse Characteristics
200 °C
175 °C
0
10
200 °C
175 °C
100
150 °C
125 °C
10-1
100 °C
10-2
75 °C
50 °C
10-3
25 °C
10-4
125 °C
0
20
40
60
80
Reverse Voltage - VR (V)
100
120
Typical Junction Capacitance
25 °C
-1
10
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
Instantaneous Reverse Current - IR (mA)
101
101
(1.52±.254)
10-2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage Drop - VF (V)
0.8
400
300
200
100
0
20
40
60
80
Reverse Voltage - VR (V)
100
Vf Curves shown are for die only.
©2003 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
120
SHD114244
SHD114244A
SHD114244B
SENSITRON
TECHNICAL DATA
DATA SHEET 4505, REV. A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
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©2003 Sensitron Semiconductor 221 West Industry Court  Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]
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