A139x Family Datasheet

A1391, A1392, A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
withTri-State Output and User-Selectable Sleep Mode
Features and Benefits
Description
▪
▪
▪
▪
▪
The A139x family of linear Hall effect sensor integrated circuits
(ICs) provide a voltage output that is directly proportional to
an applied magnetic field. Before amplification, the sensitivity
of typical Hall effect ICs (measured in mV/G) is directly
proportional to the current flowing through the Hall effect
transducer element inside the ICs. In many applications, it
is difficult to achieve sufficient sensitivity levels with a Hall
effect sensor IC without consuming more than 3 mA of current.
The A139x minimize current consumption to less than 25 μA
through the addition of a user-selectable sleep mode. This makes
these devices perfect for battery-operated applications such as:
cellular phones, digital cameras, and portable tools. End users
can control the current consumption of the A139x by applying a
¯Ē
¯Ē
¯P̄¯ pin. The outputs of the devices
logic level signal to the S̄L̄
are not valid (high-impedance mode) during sleep mode. The
high-impedance output feature allows the connection of multiple
A139x Hall effect devices to a single A-to-D converter input.
▪
▪
▪
▪
▪
High-impedance output during sleep mode
Compatible with 2.5 to 3.5 V power supplies
10 mW power consumption in the active mode
Miniature MLP/DFN package
Ratiometric output scales with the ratiometric supply
reference voltage (VREF pin)
Temperature-stable quiescent output voltage and
sensitivity
Wide ambient temperature range: –20°C to 85°C
ESD protection greater than 3 kV
Solid-state reliability
Preset sensitivity and offset at final test
Package: 6 pin MLP/DFN (suffix EH)
The quiescent output voltage of these devices is 50 % nominal of
the ratiometric supply reference voltage applied to the VREF pin
of the device. The output voltage of the device is not ratiometric
with respect to the SUPPLY pin.
Approximate scale
Continued on the next page…
Functional Block Diagram
VCC
VREF
To all subcircuits
RRatio / 2
RRatio / 2
Amp
Filter
Dynamic Offset
Cancellation
Hall Element
Regulator
Out
Gain
Offset
Programming Logic
SLEEP
Circuit Reference Current
GND
1391-DS, Rev. 7
OUT
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
Description (continued)
Despite the low power consumption of the circuitry in the A139x,
the features required to produce a highly-accurate linear Hall effect
IC have not been compromised. Each BiCMOS monolithic circuit
integrates a Hall element, improved temperature-compensating
circuitry to reduce the intrinsic sensitivity drift of the Hall element,
a small-signal high-gain amplifier, and proprietary dynamic
offset cancellation circuits. End of line, post-packaging, factory
programming allows precise control of device sensitivity and
offset.
These devices are available in a small 2.0 × 3.0 mm, 0.75 mm nominal
height microleaded package (MLP/DFN). It is Pb (lead) free, with
100% matte tin leadframe plating.
Selection Guide
Sensitivity
Part Number
(mV / G, Typ.)
Package
Packing1
A1391SEHLT-T2
1.25
DFN/MLP 2×3 mm; 0.75 mm nominal height
7-in. reel, 3000 pieces/reel
A1392SEHLT-T2
2.50
DFN/MLP 2×3 mm; 0.75 mm nominal height
7-in. reel, 3000 pieces/reel
A1393SEHLT-T2
5
DFN/MLP 2×3 mm; 0.75 mm nominal height
7-in. reel, 3000 pieces/reel
A1395SEHLT-T2
10
DFN/MLP 2×3 mm; 0.75 mm nominal height
7-in. reel, 3000 pieces/reel
1Contact Allegro™
2Allegro
for additional packing options.
products sold in DFN package types are not intended for automotive applications.
Absolute Maximum Ratings*
Rating
Unit
Supply Voltage
Characteristic
Symbol
VCC
Notes
8
V
Reverse-Supply Voltage
VRCC
–0.1
V
Ratiometric Supply Reference Voltage
VREF
7
V
Reverse-Ratiometric Supply Reference Voltage
VRREF
–0.1
V
Logic Supply Voltage
VS̄¯ L̄¯ Ē¯ Ē¯ P̄¯
32
V
Reverse-Logic Supply Voltage
VRS̄¯ L̄¯ Ē¯ Ē¯ P̄¯
–0.1
V
Output Voltage
VOUT
VCC + 0.1
V
Reverse-Output Voltage
VROUT
–0.1
V
Operating Ambient Temperature
(VCC > 2.5 V)
TA
–20 to 85
ºC
Junction Temperature
TJ(MAX)
Range S
165
ºC
StorageTemperature
Tstg
–65 to 170
ºC
*All ratings with reference to ground
Pin-out Diagram
Pin
Name
SLEEP
1
VCC
Supply
GND
2
OUT
Output
3
GND
Ground
4
GND
Ground
5
S̄¯L̄¯Ē¯Ē¯P̄¯
Toggle sleep mode
6
VREF
Supply for ratiometric reference
6
VREF
2
5
3
4
VCC
1
OUT
GND
Terminal List Table
Function
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
2
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Device Characteristics Tables
ELECTRICAL CHARACTERISTICS valid through full operating ambient temperature range, unless otherwise noted
Characteristic
Supply Voltage
Nominal Supply Voltage
Supply Zener Clamp Voltage
Ratiometric Reference Voltage2
Ratiometric Reference Zener Clamp Voltage
Symbol
VCC
VCCN
VCCZ
VREF
VREFZ
Test Conditions
ICC = 7 mA, TA = 25°C
IVREF = 3 mA, TA = 25°C
S̄¯L̄¯Ē¯Ē¯P̄¯ Input Voltage
VINH
VINL
¯L̄¯Ē¯Ē¯P̄¯ Input Threshold
S̄
Ratiometric Reference Input Resistance
RREF
Chopper Stabilization Chopping Frequency
fC
ISLEEP
¯L̄¯Ē¯Ē
¯P̄
¯ Input Current
S̄
Supply
Current3
ICC
Quiescent Output Power Supply Rejection4
PSRVOQ
Typ.1
–
3.0
8.3
–
8.3
Max.
3.5
–
–
VCC
–
–0.1
–
VCC + 0.5
V
–
–
0.45 × VCC
0.20 × VCC
–
–
V
V
250
–
–
kΩ
–
5
–
MΩ
Min.
2.5
–
6
2.5
6
For active mode
For sleep mode
VSLEEP > VINH , VCC = VCCN,
TA = 25°C
VSLEEP < VINL, VCC = VCCN,
TA = 25°C
VCC = VCCN, TA = 25°C
VSLEEP = 3 V, VCC = VCCN
VSLEEP < VINL, VCC = VCCN,
TA = 25°C
VSLEEP > VINH , VCC = VCCN,
TA = 25°C
fAC < 1 kHz
Units
V
V
V
V
V
–
200
–
kHz
–
1
–
μA
–
0.025
–
mA
–
3.2
–
mA
–
–60
–
dB
1Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as T = 25°C. Performance
A
may vary for individual units, within the specified maximum and minimum limits.
2 Voltage applied to the VREF pin. Note that the V
voltage must be less than or equal to V . Degradation in device accuracy will occur with applied
REF
voltages of less than 2.5 V.
3 If the VREF pin is tied to the VCC pin, the supply current would be I
4f
cc
CC +
VREF / RREF
AC is any AC component frequency that exists on the supply line.
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
3
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
OUTPUT CHARACTERISTICS valid through full operating ambient temperature range, unless otherwise noted
Characteristic
Min.
–
–
Typ.1
VREF – 0.1
0.1
Max.
–
–
Units
V
V
–
–
VCC + 0.1
V
A1391 TA = 25°C, VCC = VREF = VCCN
A1392 TA = 25°C, VCC = VREF = VCCN
A1393 TA = 25°C, VCC = VREF = VCCN
A1395 TA = 25°C, VCC = VREF = VCCN
TA = 25°C, B = 0 G
fout = 1 kHz, VSLEEP > VINH , active mode
fout = 1 kHz, VSLEEP < VINL, sleep mode
Output to ground
Output to ground
–3 dB point, VOUT = 1 Vpp sinusoidal,
VCC = VCCN
Cbypass = 0.1 μF,
BWexternalLPF = 2 kHz
1391
Cbypass = 0.1 μF, no load
–
–
–
–
–
–
–
15
–
1.25
2.50
5
10
0.500 × VREF
20
4M
–
–
–
–
–
–
–
–
–
–
10
mV/G
mV/G
mV/G
mV/G
V
Ω
Ω
kΩ
nF
–
10
–
kHz
–
6
12
mVpp
–
–
20
mVpp
1392
–
–
40
mVpp
–
12
24
mVpp
–
–
–
–
40
80
mVpp
mVpp
Linear Output Voltage
Range
Symbol
VOUTH
VOUTL
Maximum Voltage Applied
to Output
VOUTMAX VSLEEP < VINL
Sensitivity2
Sens
Quiescent Output
VOUTQ
Output Resistance3
ROUT
Output Load Resistance
Output Load Capacitance
RL
CL
Output Bandwidth
BW
Noise4,5
Vn
Test Conditions
VCC = VCCN, VREF ≤ VCC
VCC = VCCN, VREF ≤ VCC
1393
1395
Cbypass = 0.1 μF, no load
Cbypass = 0.1 μF,
BWexternalLPF = 2 kHz
Cbypass = 0.1 μF, no load
Cbypass = 0.1 μF, no load
1Typical
data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
2For V
REF values other than VREF = VCCN , the sensitivity can be derived from the following equation: K × VREF , where K =0.416 for the A1391, K= 0.823
for the A1392, K = 1.664 for the A1393, and K = 3.328 for the A1395.
3f
OUT is the output signal frequency
4Noise specification includes digital and analog noise.
5Values for BW
externalLPF do not include any noise resulting from noise on the externally-supplied VREF voltage.
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
4
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
OUTPUT TIMING CHARACTERISTICS1 TA = 25°C
Characteristic
Power-On Time3
Power-Off Time4
Symbol
tPON
tPOFF
Test Conditions
Min.
–
–
Typ.2
40
1
Max.
60
–
Units
μs
μs
1See
figure 1 for explicit timing delays.
data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
3Power-On Time is the elapsed time after the voltage on the S̄
¯L̄¯Ē¯Ē¯P̄¯ pin exceeds the active mode threshold voltage,VINH, until the time the device output
reaches 90% of its value.
4Power-Off Time is the duration of time between when the signal on the ¯
¯L̄¯Ē¯Ē¯P̄¯ pin switches from HIGH to LOW and when ICC drops to under 100 μA.
S̄
During this time period, the output goes into the HIGH impedance state.
2Typical
MAGNETIC CHARACTERISTICS TA = 25°C
Characteristic
Symbol
Ratiometry
VOUTQ(V)
Ratiometry
Sens(V)
Positive Linearity
Lin+
Negative Linearity
Lin–
Symmetry
Sym
Test Conditions
Min.
–
–
–
–
–
Typ.*
100
100
100
100
100
Max.
–
–
–
–
–
Units
%
%
%
%
%
*Typical data are for initial design estimations only, and assume optimum manufacturing and application conditions, such as TA = 25°C. Performance
may vary for individual units, within the specified maximum and minimum limits.
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
5
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
Electrical Characteristic Data
Supply Current versus Ambient Temperature
A139x, VCC = VREF = 3 V
3.5
ICC (mA)
3.0
2.5
2.0
Active Mode
Sleep Mode
1.5
1.0
0.5
0
-20
-5
10
25
40
55
70
85
TA (°C)
Ratiometric Reference Input Current
versus Ambient Temperature
SLEEP Input Current
versus Ambient Temperature
A139x, VCC = VREF= VSLEEP = 3 V
19
17
ISLEEP (µA)
IREF (µA)
15
13
11
9
7
5
3
1
-20
-5
10
25
40
TA (°C)
55
70
85
A139x, VCC = VREF= VSLEEP = 3 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-20
-5
10
25
40
55
70
85
TA (°C)
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
6
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
Magnetic Characteristic Data
Average Ratiometry, VOUTQ , versus Ambient Temperture
(A139x)
Average Ratiometry, Voq (%)
101.0
100.8
2.5 to 3 V
3.5 to 3 V
100.6
100.4
100.2
100.0
99.8
99.6
99.4
99.2
99.0
-20
-5
10
25
40
TA (°C)
55
70
Average Ratiometry, Sens, versus Ambient Temperture
(A1392)
102.0
102.0
101.5
101.5
Average Ratiometry, Sens (%)
Average Ratiometry, Sens (%)
Average Ratiometry, Sens, versus Ambient Temperture
(A1391)
101.0
2.5 to 3 V
3.5 to 3 V
100.5
100.0
99.5
99.0
98.5
98.0
85
97.5
101.0
100.5
2.5 to 3 V
3.5 to 3 V
100.0
99.5
99.0
98.5
98.0
97.5
-20
-5
10
25
40
TA (°C)
55
70
85
-20
-5
Average Symmetry, Vcc=Vref=Vsleep=3V
(A139x)
25
40
TA (°C)
55
70
85
70
85
Average Linearity
(A139x)
102.0
102.0
101.5
Average Linearity (%)
101.5
Average Symetry (%)
10
101.0
100.5
100.0
99.5
99.0
101.0
100.5
100.0
99.5
99.0
Linearity - , Vcc=3.5V
Linearity +, Vcc=3.5V
Linearity +, Vcc=2.5V
Linearity -, Vcc = 2.5V
98.5
98.5
98.0
98.0
97.5
97.0
97.5
-20
-5
10
25
40
TA (°C)
55
70
85
-20
-5
10
25
40
55
TA (°C)
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
7
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
THERMAL CHARACTERISTICS may require derating at maximum conditions, see application information
Characteristic
Symbol
RθJA
Package Thermal Resistance
Test Conditions
Min. Units
1-layer PCB with copper limited to solder pads
221
ºC/W
2-layer PCB with 0.6 in.2 of copper area each side, connected by
thermal vias
70
ºC/W
4-layer PCB based on JEDEC standard
50
ºC/W
Power Dissipation versus Ambient Temperature
4500
4000
Power Dissipation, PD (m W)
3500
4-layer PCB
(RθJA = 50 ºC/W)
3000
2-layer PCB
(RθJA = 70 ºC/W)
2500
2000
1-layer PCB
(RθJA = 221 ºC/W)
1500
1000
500
0
20
40
60
80
100
120
Temperature (°C)
140
160
180
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
8
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Characteristics Definitions
Ratiometric. The A139x devices feature ratiometric output.
The quiescent voltage output and sensitivity are proportional to
the ratiometric supply reference voltage.
The percent ratiometric change in the quiescent voltage output is
defined as:
ΔVOUTQ(ΔV) =
ΔVOUTQ(VREF)÷ ΔVOUTQ(3V)
VREF ÷ 3 V
× 100 %
(1)
Linearity and Symmetry. The on-chip output stage is
designed to provide a linear output with maximum supply voltage
of VCCN. Although application of very high magnetic fields will
not damage these devices, it will force the output into a non-linear region. Linearity in percent is measured and defined as
Lin+ =
and the percent ratiometric change in sensitivity is defined as:
ΔSens(ΔV) =
ΔSens(VREF)÷ ΔSens(3V)
VREF ÷ 3 V
× 100%
(2)
Lin– =
VOUT(+B) – VOUTQ
2(VOUT(+B / 2) – VOUTQ )
VOUT(–B) – VOUTQ
2(VOUT(–B / 2) – VOUTQ )
× 100 %
(3)
× 100 %
(4)
× 100 %
(5)
and output symmetry as
Sym =
VOUT(+B) – VOUTQ
VOUTQ – VOUT(–B)
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
9
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
Device Low-Power Functionality
A139x are low-power Hall effect sensor ICs that are perfect for
power sensitive customer applications. The current consumption
of these devices is typically 3.2 mA, while the device is in the
active mode, and less than 25 μA when the device is in the sleep
¯Ē
¯Ē
¯P̄¯ pin
mode. Toggling the logic level signal connected to the S̄L̄
drives the device into either the active mode or the sleep mode.
A logic low sleep signal drives the device into the sleep mode,
while a logic high sleep signal drives the device into the active
mode.
In the case in which the VREF pin is powered before the VCC
pin, the device will not operate within the specified limits until
the supply voltage is equal to the reference voltage. When the
device is switched from the sleep mode to the active mode, a time
defined by tPON must elapse before the output of the device is
valid. The device output transitions into the high impedance state
approximately tPOFF seconds after a logic low signal is applied to
¯Ē
¯Ē
¯P̄¯ pin (see figure 1).
the S̄L̄
If possible, it is recommended to power-up the device in the
sleep mode. However, if the application requires that the device
be powered on in the active mode, then a 10 kΩ resistor in series
¯Ē
¯Ē
¯P̄¯ pin is recommended. This resistor will limit the
with the S̄L̄
¯Ē
¯Ē
¯P̄¯ pin if certain semiconductor
current that flows into the S̄L̄
junctions become forward biased before the ramp up of the voltage on the VCC pin. Note that this current limiting resistor is not
¯Ē
¯Ē
¯P̄¯ pin directly to the VCC
required if the user connects the S̄L̄
pin. The same precautions are advised if the device supply is
¯Ē
¯Ē
¯P̄¯ pin.
powered-off while power is still applied to the S̄L̄
VCC
VSLEEP
ICC
+B
B field 0
–B
VOUT
HIGH
IMPEDANCE
HIGH
IMPEDANCE
HIGH
IMPEDANCE
tPON
tPOFF
tPON
tPOFF
Figure 1. A139x Timing Diagram
10
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Device Supply Ratiometry Application Circuit
Figures 2 and 3 present applications where the VCC pin is connected together with the VREF pin of the A139x. Both of these
pins are connected to the battery, Vbat2. In this case, the device
output will be ratiometric with respect to the battery voltage.
In both figures, the device output is connected to the input of an
A-to-D converter. In this configuration, the converter reference
voltage is Vbat1.
The only difference between these two applications is that the
¯Ē
¯Ē
¯P̄¯ pin in figure 2 is connected to the Vbat2 potential, so the
S̄L̄
¯Ē
¯Ē
¯P̄¯ pin is
device is always in the active mode. In figure 3, the S̄L̄
toggled by the microprocessor; therefore, the device is selectively
and periodically toggled between active mode and sleep mode.
It is strongly recommended that an external bypass capacitor be
connected, in close proximity to the A139x device, between the
VCC and GND pins of the device to reduce both external noise
and noise generated by the chopper-stabilization circuits inside of
the A139x.
Cbypass Vbat2
Vbat1
Supply pin
VCC
MicroI/O
processor
VREF
A139x
OUT
SLEEP
GND
GND
I/O
Figure 2. Application circuit showing sleep mode disabled and output ratiometirc to the
A139x supply.
Cbypass
Vbat1
Supply pin
MicroI/O
processor
Vbat2
VCC
VREF
A139x
OUT
SLEEP
GND
GND
I/O
Figure 3. Application circuit showing microprocessor-controlled sleep mode and output ratiometirc to the A139x supply.
11
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Application Circuit with User-Configurable Ratiometry
In figures 4 and 5, the microprocessor supply voltage determines
the ratiometric performance of the A139x output signal. As in the
circuits shown in figures 2 and 3, the device is powered by the
Vbat2 supply, but in this case, ratiometry is determined by the
microprocessor supply, Vbat1.
between the active and sleep modes.
¯Ē
¯Ē
¯P̄¯ pin is triggered by the output logic signal from the
The S̄L̄
¯Ē
¯Ē
¯P̄¯ pin is
microprocessor in figure 5, while in figure 4, the S̄L̄
connected to the device power supply pin. Therefore, the device
as configured in figure 4 is constantly in active mode, while
the device as confiugred in figure 5 can be periodically toggled
It is strongly recommended that an external bypass capacitor be
connected, in close proximity to the A139x device, between the
VCC and GND pins of the device to reduce both external noise
and noise generated by the chopper-stabilization circuits inside of
the A139x.
Cfilter
The capacitor Cfilter is optional, and can be used to prevent possible noise transients from the microprocessor supply reaching
the device reference pin, VREF.
Cbypass Vbat2
Vbat 1
Supply pin
VCC
Micro- I/O
processor
I/O
VREF
A139x
OUT
SLEEP
GND
GND
Figure 4. Application circuit showing ratiometry of VREF . Sleep mode is disabled and the VREF
pin is tied to the microprocessor supply.
Cbypass Vbat2
Cfilter Vbat1
Supply pin
Micro- I/O
processor
I/O
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Figure 5. Application circuit showing device reference pin, VREF, tied to microprocessor supply. The device
sleep mode also is controlled by the microprocessor.
12
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
Summary of Single-Device Application Circuits
Device Pin Connections
Application Circuit
VREF pin (Ratiometric
Reference Supply)
Device Output
Cbypass Vbat2
Vbat1
Supply pin
VCC
MicroI/O
processor
VREF
A139x
OUT
SLEEP
GND
GND
I/O
Cbypass
Vbat1
Connected to
A139x device supply,
VCC
Connected to
A139x device supply,
VCC
Ratiometric to device
supply (VCC), and
always valid
Connected to
A139x device supply,
VCC
Controlled by
microprocessor
Ratiometric to device
supply (VCC), and
controlled by the
microprocessor
Connected to
microprocessor supply
Connected to
A139x device supply,
VCC
Ratiometric to microprocessor supply, and
always valid
Connected to
microprocessor supply
Controlled by
microprocessor
Ratiometric to microprocessor supply,
and controlled by the
microprocessor
Vbat2
Supply pin
VCC
VREF
A139x
MicroI/O
processor
OUT
SLEEP
GND
GND
I/O
Cfilter
S̄¯L̄¯Ē¯Ē¯P̄¯ pin
Cbypass Vbat2
Vbat 1
Supply pin
VCC
Micro- I/O
processor
I/O
VREF
A139x
OUT
SLEEP
GND
GND
Cbypass Vbat2
Cfilter Vbat1
Supply pin
Micro- I/O
processor
I/O
VCC
VREF
A139x
OUT
SLEEP
GND
GND
13
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Application Circuit with Multiple Hall Devices and a Single A-to-D Converter
Multiple A139x devices can be connected to a single microprocessor or A-to-D converter input. In this case, a single
device is periodically triggered and put into active mode by
the microprocessor. While one A139x device is in active
mode, all of the other A139x devices must remain in sleep
mode. While these devices are in sleep mode, their outputs
are in a high-impedance state. In this circuit configuration,
the microprocessor reads the output of one device at a time,
¯Ē
¯Ē
¯P̄¯ pins.
according to microprocessor input to the S̄L̄
When multiple device outputs are connected to the same
microprocessor input, pulse timing from the microprocessor (for example, lines A1 through A4 in figure 6) must be
configured to prevent more than one device from being in the
awake mode at any given time of the application. A device
output structure can be damaged when its output voltage is
forced above the device supply voltage by more than 0.1 V.
Cbypass Vbat2
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Cbypass Vbat2
VCC
VREF
A1391x
Cfilter Vbat1
Supply pin
OUT
SLEEP
GND
GND
VCC
VREF
Microprocessor
A1
A2
A1
I/O
Cbypass Vbat2
A3
A139x
A4
A2
A3
OUT
SLEEP
GND
GND
A4
Cbypass Vbat2
VCC
VREF
A139x
OUT
SLEEP
GND
GND
Figure 6. Application circuit showing multiple A139x devices, controlled by a single microprocessor.
14
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
A1391, A1392,
A1393, and A1395
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
Package EH, 6-pin MLP/DFN
0.50
2.00 ±0.15
0.30
1.00 E
6
F
6
1.00
1.50 E
3.70
3.00 ±0.15
A
1
7X
1.25
E
2
1
D
SEATING
PLANE
0.08 C
0.95
C
C PCB Layout Reference View
0.75 ±0.05
0.25 ±0.05
0.5 BSC
1
2
YWW
LLL
NN
0.55 ±0.10
B
1.224 ±0.050
1
G
Standard Branding Reference View
Y = Last two digits of year of manufacture
W = Week of manufacture
L = Lot number
N = Last two digits of device part number
6
+0.100
1.042 –0.150
For Reference Only, not for tooling use (reference DWG-2861;
reference JEDEC MO-229WCED, Type 1)
Dimensions in millimeters
Exact case and lead configuration at supplier discretion within limits shown
A
Terminal #1 mark area
D
B
Exposed thermal pad (reference only, terminal #1
identifier appearance at supplier discretion)
E
Hall Element (not to scale); U.S. customary dimensions controlling
C
Reference land pattern layout;
All pads a minimum of 0.20 mm from all adjacent pads; adjust as
necessary to meet application process requirements and PCB layout
tolerances; when mounting on a multilayer PCB, thermal vias at the
exposed thermal pad land can improve thermal dissipation (reference
EIA/JEDEC Standard JESD51-5)
F
Active Area Depth, 0.32 mm NOM
G
Branding scale and appearance at supplier discretion
Coplanarity includes exposed thermal pad and terminals
15
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Micro Power 3 V Linear Hall Effect Sensor ICs
with Tri-State Output and User Selectable Sleep Mode
A1391, A1392,
A1393, and A1395
Revision History
Revision
Revision Date
Rev. 7
October 26, 2011
Description of Revision
Update Selection Guide
Copyright ©2005-2013, Allegro MicroSystems, LLC
Allegro MicroSystems, LLC reserves the right to make, from time to time, such departures from the detail specifications as may be required to
permit improvements in the performance, reliability, or manufacturability of its products. Before placing an order, the user is cautioned to verify that
the information being relied upon is current.
Allegro’s products are not to be used in any devices or systems, including but not limited to life support devices or systems, in which a failure of
Allegro’s product can reasonably be expected to cause bodily harm.
The information included herein is believed to be accurate and reliable. However, Allegro MicroSystems, LLC assumes no responsibility for its
use; nor for any infringement of patents or other rights of third parties which may result from its use.
For the latest version of this document, visit our website:
www.allegromicro.com
16
Allegro MicroSystems, LLC
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
Similar pages