1EDI30J12Cx (preliminary)

1EDI EiceDRIVER™ Enhanced
1EDI30J12CP
Single JFET Driver IC
Preliminary Datasheet
Rev. 1.3, November 2014
Industrial Power Control
Edition 2014-11-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
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1EDI EiceDRIVER™ Enhanced
1EDI30J12CP
Single JFET Driver IC
Product Highlights
•
•
•
•
Single driver for normally-on JFET
Galvanic isolation
Signal transmission via Coreless Transformer
Supporting Direct Drive JFET Topology
Features
•
•
•
•
•
•
•
Single channel isolated JFET driver
Optimized for 1200V Infineon CoolSiCTM JFETs
Extremely low propagation delay of typ. 80ns
Extremly high common mode transient immunity of 100V/ns
Minimal 3A rail-to-rail output
Safe turn off during start up
Supports bootstrap operation
Description
•
The 1EDI30J12CP is an advanced single channel JFET gate driver. The driver is built to drive a normally-on
CoolSiCTM JFET together with a low voltage P-channel MOSFET in a switching loss optimized Direct Drive
JFET Topology.
The device consists of two galvanic separated parts. The input signals are TTL level compatible with a highvoltage capability of up to 17.5V. The output chip is directly driving a CoolSiCTM JFET and MOSFET with rail
to rail output stages.
+5V to GND
CoolSiCT M
JFET
•
RgJ
VCC1
JFDrv
CVCC1
VCC2
From Controller
GND1
MDrv
IN
VReg
EN
CVReg
LV MOSFET
RgM
GND
CVEE2
CLJFG
VEE2
BSEN
-25V to VCC2
1EDI30J12Cx
Product Type
Package
1EDI30J12CP
PG-DSO-19-4
Preliminary Datasheet
2
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Table of Contents
1
Pin Configuration and Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2
Representative Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
3.1
3.2
3.2.1
3.2.2
3.2.3
3.2.4
3.3
3.3.1
3.3.2
3.3.3
Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Theory of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Normal start up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Reverse start up with self-pinch-off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Bootstrap supply mode and start up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protection Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Active Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Interlock between MOSFET Gate and JFET Gate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Bootstrap Start up Mode Indicator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4
4.1
4.2
4.3
4.4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Outline Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
6.1
6.2
6.3
Application Hints . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Driver Supply Set up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate clamping diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reference Layout, Thermal Layout, Layout Guide Lines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Preliminary Datasheet
3
14
14
15
15
16
21
21
23
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1EDI30J12CP
Pin Configuration and Description
1
Pin Configuration and Description
The pin configuration for 1EDI30J12CP in a PG-DSO-19-4 wide body package is shown in Figure 1 and Table 1.
N.C.
1
20
N.C.
BSEN
2
19
VCC1
CLJFG
3
18
IN
VREG
4
17
GND1
N.C.
5
VEE2
6
15
EN
MDrv
7
14
N.C.
JFDrv
8
13
N.C.
VCC2
9
12
N.C.
10
11
N.C.
N.C.
PG-DSO-19-4 (300mil)
Figure 1
Pin Configuration PG-DSO-19-4
Table 1
Pin Configuration 1EDI30J12CP in PG-DSO-19-4, Wide Body
Pin
Symbol
Description
1
N.C.
Internally not connected1)
2
BSEN
Bootstrap Enable
For bootstrap operation connect this pin to VCC2, for non bootstrap operation to VREG
3
CLJFG
Reserved2)
4
VREG
Voltage Regulator Output
VREG is the output of the integrated linear regulator and the negative power supply for the gate
drivers
5
N.C.
Internally not connected1)
6
VEE2
Negative Power Supply Output Side
VEE2 is the input of the integrated linear regulator
7
MDrv
MOSFET Driver Output
8
JFDrv
JFET Driver Output
9
VCC2
Positive Power Supply Output Side
VCC2 is the positive supply input of the JFET driver and MOSFET driver, connected to the
sources of the JFET and the MOSFET
10
N.C.
Internally not connected1)
11
N.C.
Internally not connected1)
12
N.C.
Internally not connected1)
13
N.C.
Internally not connected1)
14
N.C.
Internally not connected1)
Preliminary Datasheet
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1EDI30J12CP
Pin Configuration and Description
Table 1
Pin Configuration 1EDI30J12CP in PG-DSO-19-4, Wide Body (cont’d)
Pin
Symbol
Description
15
EN
Driver Enable
17
GND1
Signal Ground Input Side
18
IN
Driver Input
19
VCC1
Positive Supply Input Side
20
N.C.
Internally not connected1)
1) Pads of N.C. pins must be left unconnected, separated from each other and floating for maximum creepage/clearance
distance
2) Connect to JFDrv Pin or leave pin unconnected and floating
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1EDI30J12CP
Representative Block Diagram
2
Representative Block Diagram
A simplified functional block diagram is given in Figure 2 representing the principle functionality of the driver.
1EDI30J12Cx
x BSEN
x VCC2
VCC1 x
UVLO
UVLO
Voltage
Supply
Linear
Regulator
VCC2
x VREG
x VEE2
EN x
x JFDrv
Input
Logic
IN x
TX
RX
Logic
VCC2 VREG
x CLJFG
x MDrv
GND1 x
VREG
Figure 2
Representative Block Diagram
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1EDI30J12CP
Functional Description
3
Functional Description
3.1
Introduction
The 1EDI30J12Cx is an advanced JFET (junction gate field-effect transistor) gate driver. The driver is built to drive
a normally-on CoolSiCTM JFET together with a low voltage p-channel MOSFET in a switching loss optimized
cascode operation called Direct Drive JFET Topology.
As MOSFET (metal–oxide–semiconductor field-effect transistor; referred to as pMOS, LV MOSFET) a 30 V pchannel OptiMOSTM MOSFET with low RDSon is typically used (e.g. OptiMOSTM BSC030P03NS3 G).
The driver consists of two galvanic separated parts. The inputs can be connected to any controller with varying
signal levels. The pins can handle signals up to 17.5V, however the thresholds remains at TTL levels.
The output side is connected to the high voltage side of the application, incorporates two rail to rail output stages.
The two gate drivers, one for the JFET and one for the MOSFET, drive the gates between VCC2 and the regulated
output VREG.
The 1EDI30J12Cx supports two different start up modes selectable by the bootstrap enable pin BSEN. A
specialized bootstrap operation mode for supplying the driver via a bootstrap diode. And a standard operation
mode for direct supply realised with a floating isolated supply source.
The output side has a built in linear voltage regulator to generate an accurate JFET driver supply voltage inside
the window between pinch off voltage and punch through voltage of Infineon’s CoolSiCTM JFETs . In addition, the
internal regulator separates the driver supply voltage from a common supply voltage for low side switches, so all
low side switches could be supplied by one negative supply. Further in isolated supply topologies it offers the
support of wide supply range due to preregulation. So voltage drops due to bad transformer coupling can be
handled.
Cascodes were introduced in the past for faster switching made possible by the elimination of the JFETs Cgd
acting as a feedback to the control gate. The disadvantage by eliminating the feedback is that the dV/dt of the
switch gets uncontrolled.
New JFET devices like CoolSiCTM JFET offers a reduced gate charge, therefore driving the JFET gate directly
offers advantages in controlling the switching speed with lower EMI and less ringing.
3.2
Theory of Operation
The optimized cascode operation offered by the 1EDI30J12Cx driver called Direct Drive JFET Topology differs
from the normal cascode in the way it is controlling the switch. The normal cascode controls the normally-on JFET
by indirectly controlling the source potential of the JFET via the low-voltage MOSFET.
In the Direct Drive JFET Topology the MOSFET is used to keep the normally-on JFET in a safe off-state during
start up of the application as in the normal cascode. When the driver auxilliary supply voltage is high enough to
release the Under Voltage Lock Out (UVLO) the MOSFET is permanently turned on and the JFET is driven directly
according to the input signal.
The input signal is transferred across the isolating Coreless Transformer (CLT) from input side to output side. A
high at the input pin turns on the JFET. The 1EDI30J12Cx is a non inverting driver.
When the VCC1 supply voltage has reached the turn on threshold and the signal at the EN pin is high, the input
side is able to send the IN signal to the output side.
Depending on the UVLO of the output side, the input signal is either ignored if |VVREG| is below the UVLO-onthreshold or is applied amplified at the gate of JFET.
When the VCC1 voltage potential reaches the turn off threshold, the input side sends an off signal to the output
side to ensure a defined switch off state before the driver is disabled.
The driver can be disabled using the EN pin: in case the EN pin is pulled to low, the output is switched off
regardless of the signal applied to the IN pin.
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1EDI30J12CP
Functional Description
3.2.1
Supply options
Two different isolated supply configurations are possible depending on the reference node of the supply.
1. The external power supply is related to VCC2 (see Figure 3 high-side switch and Figure 10).
This configuration is possible for both high and low-side switches, but each driver has to be separately supplied
in order to guarantee the correct start up behavior. It is not possible to share the same supply among more
than one driver.
2. The external power supply is related to the MOSFET drain potential (see Figure 3 low-side switches and
Figure 12).
This allows for using the same power supply to more than one driver stage as long as their MOSFET drains
are connected to the same potential. Which makes this configuration most suitable to be used on drivers
connected to low-side switches.
HV supply
L1
VCC1
+5V
CVCC1
N
GND
HS_IN
JFDrv
VCC2
GND1
MDrv
EN
VReg
IN
CLJFG
CVReg
CVEE2
C
-25V_HS
VEE2
Load
BSEN
1EDI30J12Cx
+5V
VCC1
CVCC1
GND
PFC_IN
+5V
JFDrv
GND1
MDrv
EN
VReg
IN
VCC1
CVCC1
VCC2
GND
CVReg
CLJFG
CVEE2
LS_IN
JFDrv
VCC2
GND1
MDrv
EN
VREG
IN
CLJFG
VEE2
VEE2
BSEN
BSEN
1EDI30J12Cx
1EDI30J12Cx
CVReg
CVEE2
C
-25V
Figure 3
Application drawing for isolated supply (PFC+HB)
Additionally it is possible to supply the driver via bootstrapping. In this supply mode a high-side driverstage can
share the same isolated high-side supply (see Figure 6). It is also possible to transfer the power from the highside to a low-side driverstage via a bootrapping capacitor (see Figure 13). Further information about the
bootstapping supply can be found in Chapter 3.2.4.
3.2.2
Normal start up
This section describes a normal start up in which the auxiliary supplies of the driver are enabled before a voltage
is applied over the switch (JFET drain to pMOS drain). The timing diagram of this start up is shown in Figure 4.
The negative driver supply voltage is applied to VEE2. VREG is following the supply voltage ramp with the
regulator drop of approximately 2V, depending on the capacitor size and the ramping speed of VEE2. When VREG
reaches the UVLO threshold the driver is turning on the p-channel MOSFET. After MDrv has reached the onthreshold the JFET gate driver stage is active and follows the IN signals with a short propagation delay of typical
80ns.
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1EDI30J12CP
Functional Description
VCC1
V VCC1on
VVCC1off
IN
EN
Output signals referenced to VCC2
VEE2
BSEN
VREG
VVREGoff
VVREGon
MDrv
t PDOFF_EN
JFDrv
tPDON
tPDOFF
t PDON_EN
Figure 4
Principle start up, auxiliary supplies present before a voltage is applied over the switch (Signal
names are chosen equivalent to the pin names of the driver)
3.2.3
Reverse start up with self-pinch-off
One of the biggest questions that arise when dealing with normally-on devices is the situation that comes up when
the auxiliary power supply fails or is not ready at the point when the high voltage is applied over the switch.
This event is depicted in Figure 5. Due to the normally-on behavior of the JFET and the cascoded normally-off
MOSFET, the voltage is being blocked at the MOSFET. The Vds voltage that is building up over the switched-off
MOSFET is being mirrored to the JFET Vgs voltage via the diode connecting the MOSFET drain to the JFET gate
(see Chapter 6.2) until the level reaches the JFET pinch off voltage and the JFET itself blocks the voltage.
When the JFET is pinched off a small current is still flowing through the JFET charging the capacitors CVEE2 and
CVReg which supply the driver. In this way the JFET acts as a linear regulator powering the output stages of the
driver at the pinch off voltage.
As soon as the auxiliary supply is larger than the pinch off voltage the auxiliary supply is charging VEE2. As it
reaches the under voltage lockout level, the JFET is kept off and the MOSFET is turned on. From this point
onwards the driver is transmitting the IN signal to the JFET gate.
This behavior of acting in a self-regulating manner enables the driver to also work in a bootstrapping scheme.
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1EDI30J12CP
Functional Description
HV supply
Start up auxiliary supply
V VCC1on
VCC1
VVCC1off
-25V AUX
IN
EN
Output signals referenced to VCC2
VEE2
VVJ FET _pinc h_off
VREG
VVREGoff
V VREGon
MDrv
JFDrv
tPDON
tPDOFF
tPDON_EN
tPDOFF _EN
Figure 5
Principle start up with the auxiliary supplies not present when voltage is applied over the
switch (Signal names are chosen equivalent to the pin names of the driver)
3.2.4
Bootstrap supply mode and start up
In bootstrap supply mode, the capacitors at VEE2 and VREG are charged to the pinch off voltage of the JFET as
described in Chapter 3.2.3 (Infineon CoolSiCTM JFET family has the lowest gate threshold voltage at -12 V). When
the BSEN pin is connected to VCC2 the bootstrap supply mode is active. In this case a lower UVLO threshold is
used and the driver is active at approximately -9.0 V.
After passing this lower UVLO threshold the driver is ready to receive IN signals from the input stage. This input
signal is transferred to a switching logic which turns on the p-channel MOSFET. After the VMDrv has passed the
MOSFET gate turn on threshold the JFET is turned on. The voltage drop across the MOSFET and JFET channel
is nearly zero. The potential of VCC2 is identical to JFET drain voltage. A negative supply related to the JFET drain
(positive potential of DC-link capacitor, half bridge supply) can charge the input capacitor CVEE2 through a high
voltage bootstrap diode. An example of a high-side bootstrap supply can be seen in Figure 6.
If the input stage is sending a low to the driving stage, first the JFET is turned off. After the JFDrv has passed the
off threshold the MOSFET is turned off.
The propagation delay in bootstrap mode is therefore enlarged by the MOSFET gate charging time. After VREG
has passed the higher normal UVLO level, the MOSFET is permanently kept on and the delay changes to the fast
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1EDI30J12CP
Functional Description
datasheet values of typical 80ns. A timing diagram showing the various signals in this startup mode is depicted in
Figure 7. Figure 8 shows a diagram detailing the reason for the prolonged popagation delay.
The longer propagation delay can be indicated to the input side by using an optocoupler. The optocoupler diode
is inserted between BSEN and VCC2. During the start up phase in bootstrap mode BSEN is applying an output
current of at least 2 mA while IN is high.
During the bootstrap start up phase the power dissipation in the driver is increased. Therefore, the controller has
to make sure that the driver does not remain in bootstrap start up mode for longer periods of time in order not to
overheat the driver.
During the boostrap start-up phase, the propagation delay is larger and the effective JFET conduction time shorter
compared to standard operating mode. This means, the controller has to take care to compensate for the longer
propagation delays and shorter on-times, e.g. in a half-bridge configuration, the dead-times have to be increased.
After the start-up phase is finished, the controller has to reduce the dead-times to normal operating values, not to
risk body-diode conduction over long periods of time, which can lead to higher power dissipation of the JFETs.
800V
+5V
VCC1
CVCC1
GND
LS_IN
+5V
JFDrv
GND1
MDrv
EN
VReg
IN
CLJFG
VCC1
CVCC1
VCC2
GND
CVReg
CVEE2
LS_IN
VCC1
+5V
CVCC1
GND
LS_IN
VCC2
GND1
MDrv
EN
VReg
IN
VEE2
BSEN
BSEN
EN
VReg
IN
CLJFG
VCC1
+5V
CVCC1
VCC2
MDrv
CVReg
CVEE2
1EDI30J12Cx
JFDrv
GND1
-25V_H
CLJFG
VEE2
1EDI30J12Cx
C
JFDrv
GND
CVReg
CVEE2
LS_IN
JFDrv
VCC2
GND1
MDrv
EN
VREG
IN
CLJFG
VEE2
VEE2
BSEN
BSEN
1EDI30J12Cx
CVReg
CVEE2
C
1EDI30J12Cx
-25V
Figure 6
Application drawing for high side bootstrap supply (FB)
Preliminary Datasheet
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1EDI30J12CP
Functional Description
HV supply
Start up auxiliary supply
VVCC1on
VCC1
V VCC1off
IN
EN
Output signals referenced to VCC2
VEE2
V VJ FET _pinc h_off
VVREGonBS
VREG
V VREGon
V VREGoff
MDrv
JFDrv
t PDONBS
tPDON
t PDOFFBS
t PDOFF
tPDOFF _EN
tPDON_EN
tPDOFFBS
tPDONBS
Bootstrap Start up Phase
I_BSEN
Figure 7
Start up bootstrap supply mode for high side located cascodes (BSEN connected to VCC2)
(Signal names are chosen equivalent to the pin names of the driver)
IN
IN
50%
JFDrv
50%
JFDrv
50%
50%
MDrv
MDrv
a)
Figure 8
VCC2-1.9V
VCC2-19V
tPDON
tPDOFF
b)
tPDONBS
tPDOFFBS
Timing of IN to JFDrv, a) normal mode, b) bootstrap mode
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1EDI30J12CP
Functional Description
3.3
Protection Features
3.3.1
Active Shut Down
The Active Shut Down feature ensures MOSFET off-state under all circumstances even if the output side supply
is inactive. The p-channel MOSFET gate is held actively high until VREG is passing the output UVLO thresholds of
the driver.
3.3.2
Interlock between MOSFET Gate and JFET Gate
The JFET can only be switched on, if the MOSFET is on, otherwise the low voltage MOSFET will be destroyed by
overvoltage. To ensure proper operation of the cascode, the driver is monitoring the MOSFET gate voltage at
MDrv pin and the JFET gate voltage at JFDrv pin. Only if the MOSFET is on, indicated by MDrv pin having low
potential, the JFET is allowed to turn on. Similar in opposite direction, MOSFET turn off is only allowed if the JFET
is in its off state.
3.3.3
Bootstrap Start up Mode Indicator
The 1EDI30J12Cx indicates at BSEN pin that the driver has entered the bootstrap start up phase with an output
current of min 2mA to drive an opto coupler if IN signal is driven high.
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1EDI30J12CP
Characteristics
4
Characteristics
Unless otherwise noticed, voltages of the input side signals (pins VCC1, IN, EN, GND1) are measured with respect
to input ground (pin GND1), all other voltages are measured with respect to positive output supply (pin VCC2).
Currents in the following tables are defined as positive currents flowing out of the pin (unless otherwise specified).
The voltage levels are valid if other ratings are not violated.
4.1
Absolute Maximum Ratings
Absolute maximum ratings are listed in Table 2. Stresses above the max. values may cause permanent damage
to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the
integrated circuit.
For the same reason make sure that any capacitors that will be connected to pins VCC1 and VCC2 are discharged
before assembling the application circuit.
Table 2
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Min.
Unit
Remarks
Max.
Positive supply voltage input side
VVCC1
-0.3
Voltage at pin IN, EN
VIN
-0.3
Input to output isolating voltage
VISO
-1200
Negative supply voltage output side
(VEE2)
VVEE2
-30
VVCC2+0.3 V
Voltage at pin BSEN
VBSEN
VVREG-0.3
VVCC2+0.3 V
Voltage at pin VREG
VVREG
-21
VVCC2+0.3 V
VEE2 max dV/dt
|dVVEE2|
Voltage at pin JFDrv
VJFDrv
VVREG-0.3
VVCC2+0.3 V
Voltage at pin MDrv
VMDrv
VVREG-0.3
VVCC2+0.3 V
Junction temperature
TJ
-40
150
°C
Storage temperature
TS
-55
150
°C
2)3)
Maximum power dissipation
PTOT
1.0
W
PG-DSO-19-4, TA=25°C
ESD capability
VESD
2
kV
Human Body Model4)
1)
2)
3)
4)
18
VVCC1+0.3 V
+1200
125
—
V
V
1)
V/ms CVReg= 2.2µF
With reference to GND1
Prolonged storage at high temperatures reduces the lifetime of the product
Tested according to EIA/JESD22-A103D
According to EIA/JESD22-A114-B (discharging at 100pF Capacitor through 1.5kΩ Resistor)
Preliminary Datasheet
14
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Characteristics
4.2
Thermal Characteristics
Table 3
Thermal Characteristics
Parameter
Symbol
Values
Unit
Remarks
K/W
PG-DSO-19-4, TA=25°C;
Layout: Figure 16
Typ.
Thermal resistance Junction-Ambient
4.3
Operating Range
Table 4
Operating Range
Parameter
RthJA25
Symbol
85
Limit Values
Min.
Positive supply voltage input side
VVCC1
Logic input voltage input side (IN, EN) VIN
Unit
Remarks
Max.
4.75
17.5
V
0
VVCC1
V
Negative supply voltage output side
(VEE2)
VVEE2
-28
-22
V
VREG in regulation, full
PSRR
Negative supply voltage output side
(VEE2)
VVEE2
-28
-19
V
VVREG > VVREGoff1)
Output capacitance for VREG
CVREG
0.22
2.2
µF
from VREG to VCC21),
ESRCVREG < 15mOhm
Common mode transient immunity
|dVISO/dt|
—
100
V/ns
1)
Junction temperature
TJ
-40
150
°C
1)2)
1) The parameter is not subject to production test - verified by design/characterization
2) According to product qualification conditions (tested according to EIA/JESD22-A108D)
Preliminary Datasheet
15
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Characteristics
4.4
Electrical Characteristics
The electrical characteristics involve the spread of values given within the specified supply voltage and junction
temperature range TJ from -40°C to 150°C. Typical values represent the nominal values related to TJ=25°C.
Unless otherwise noticed, voltages of the input side signals (pins VCC1, IN, EN, GND1) are measured with respect
to input ground (pin GND1) all other voltages are measured with respect to positive output supply (pin VCC2).
Supply voltages are VVCC1 = 5 V and VVEE2 = -25 V if not otherwise mentioned.
The following characteristics are specified
•
•
•
•
•
Power Supply (Table 5)
Logic Input (Table 6)
JFET Driver (Table 7)
MOSFET Driver (Table 8)
Dynamic Characteristics (Table 9)
Table 5
Power Supply
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note / Test Condition
VCC1 quiescent current
IVCC1qu1
—
430
650
µA
IN = statically low,
EN = statically high
VCC1 quiescent current
IVCC1qu2
120
240
500
µA
EN = statically low
VCC1 supply current
IVCC1supp
—
1.2
1.6
mA
IN = 1MHz
VCC1 turn on threshold
VVCC1on
4.15
4.55
4.75
V
VCC1 turn off threshold
VVCC1off
3.9
4.25
4.55
V
VCC1 turn on/off hysteresis
VVCC1hys
0.15
VEE2 quiescent current 1
IVEE2qu1
—
380
500
µA
output chip off due to
UVLO
VEE2 quiescent current 2
IVEE2qu2
—
800
1100
µA
IN = low,
output chip on
VREG output voltage1)2)
VVREG0
-19.5
-18.85
-18.1
V
1µF from VREG to
VCC2, VVEE2< -22V,
Load 0mA
VREG output voltage loaded1)2) VVREG50
-19.0
-18.25
-17.5
V
1µF from VREG to
VCC2, VVEE2< -22V,
Load 50mA
VREG turn on threshold1)3)
VVREGon
-17.4
-16.9
-16.4
V
VVREGoff
-17.0
-16.4
-16.0
V
VREG turn off threshold
1)3)
1)3)
VREG turn on/off hysteresis
VVREGhys
V
0.5
V
VREG turn on threshold BS1)3) VVREGonBS
-9.8
-9.5
-9.0
V
VBSEN > -3V1)
VREG turn off threshold BS1)3) VVREGoffBS
-9.2
-8.8
-8.3
V
VBSEN > -3V1)
V
VBSEN > -3V1)
mA
including loads from
MDrv and JFDrv
VREG turn on/off hysteresis
BS1)3)
VVREGhysBS
VREG load current
IVREG
0.7
50
1) Voltage refer to VCC2
2) DC voltage
3) ULVO threshold output chip
Preliminary Datasheet
16
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Characteristics
Table 6
Logic Input
Parameter
Symbol
Values
Min.
IN, EN low input voltage
VINL
IN, EN high input voltage
VINH
IN, EN input current
ΙIN
BSEN low input voltage
VBSENL
BSEN high input voltage
VBSENH
BSEN output current
ΙBSEN
BSEN output current
ΙBSENPD
Table 7
Typ.
Unit
Max.
1.0
2.0
V
V
30
400
µA
VVREG +
2.0
V
VVREG +
3.0
-70
Note / Test Condition
VIN=VVCC1
V
-3.5
-2
mA
VBSEN > VVREG + 5.7V,
VIN = high,
VVREGon < VVREG <
VVREGonBS
-38
-15
µA
VIN= low
Unit
Note / Test Condition
JFET Driver (Reference is VCC2)
Parameter
Symbol
High Level Output Voltage
VJFDrvH
High Level Output Peak
Current
IJFDrvH
Output Voltage at low state
VJFDrvL
Values
Min.
Typ.
Max.
-2.0
-1.75
V
IJFDrv=200mA;
-4.0
-3.5
V
IJFDrv=2A;
—
-4.1
V
IJFDrv=3A1)
3.0
4.0
A
1)
VVREG +
0.17
VVREG +
0.35
V
IJFDrv=-200mA;
VVREG +
1.9
VVREG +
4.0
V
IJFDrv=-2A;
—
3.0
V
IJFDrv=-3A1)
Low Level Output Peak Current IJFDrvL
-3.0
-4.0
A
1)
Rise Time JFDrv
tJFDrvR
—
23
30
ns
Fall Time JFDrv
tJFDrvF
—
22
35
ns
CLOADJ= 4.7 nF,
VL=20% to VH 80%
Unit
Note / Test Condition
1) The parameter is not subject to production test - verified by design/characterisation
Table 8
MOSFET Driver (Reference is VCC2)
Parameter
High Level Output Voltage
Preliminary Datasheet
Symbol
VMDrvH
Values
Min.
Typ.
-1.75
-1.35
V
IMDrv=150mA
-4.0
-3.15
V
IMDrv=1.5A
17
Max.
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Characteristics
Table 8
MOSFET Driver (Reference is VCC2) (cont’d)
Parameter
Symbol
High Level Output Peak
Current
IMDrvH
Output Voltage at Low State
VMDrvL
Values
Min.
Typ.
2
3
Unit
Note / Test Condition
A
1)
Max.
VVREG
+0.26
VVREG
+0.55
V
IMDrv=-150mA
VVREG
+1.0
VVREG
-2.1
V
IMDrv=-0.5A
2.0
—
V
IMDrv=-1.0A1)
Low Level Output Peak Current IMDrvL
-2
-1
A
1)
Rise Time MDrv
tMDrvR
65
110
ns
Fall Time MDrv
tMDrvF
165
270
ns
VVREG=19V,
CLOADM= 22 nF,
VL 20% to VH 80%
Unit
Note / Test Condition
VVCC1=5V, CLOADJ=
100 pF, VIN=50%,
VJFDrv=50%, VEN=H
TJ=25°C
1) The parameter is not subject to production test - verified by design/characterisation
Table 9
Dynamic Characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Input to output propagation
delay ON (IN: L to H)
tPDON
53
80
106
ns
Input to output propagation
delay OFF (IN: H to L)
tPDOFF
53
80
106
ns
Enable to output propagation
delay ON (EN: L to H)
tPDON_EN
170
290
390
ns
Enable to output propagation
delay OFF (IN: H to L)
tPDOFF_EN
60
110
140
ns
Input to output propagation
delay distortion tPDON-tPDOFF
tPDDISTO
-4.0
12
ns
VVCC1=5V, CLOADJ=
100 pF, VIN=50%,
VJFDrv=50%, VEN=H
Input to output propagation
delay distortion due to temp
tPDDISTOT
-20
20
ns
1)
Input to output propagation
delay ON bootstrap mode2)
tPDONBS
300
ns
VVREG=-19V,
VVCC1=5V, CLOADJ=
100 pF, CLOADM=22nF,
VIN=50%, VJFDrv=50%
Input to output propagation
delay OFF bootstrap mode2)
tPDOFFBS
300
ns
VVREG=-19V,
VVCC1=5V, CLOADJ=
100 pF, CLOADM=22nF,
VIN=50%, VMDRV=-1.9V
IN input pulse surpression
TMININ
68
ns
Switching frequency
fSW
2
MHz
29
40
VVCC1=5V, CLOADJ=
100 pF, VEN=50%,
VJFDrv=50%, VIN=H
VVCC1=5V
1) The parameter is not subject to production test - verified by design/characterisation
2) See Figure 8
Preliminary Datasheet
18
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Outline Dimensions
5
Outline Dimensions
FOOTPRINT
DOCUMENT NO.
Z8B00160774
DIM
A
A1
b
c
D
E
E1
e
N
L
h
T
F1
F2
F3
Figure 9
MILLIMETERS
MIN
MAX
2.65
0.10
0.30
0.30
0.51
0.23
0.32
12.60
13.00
10.00
10.65
7.40
7.60
1.27 BSC
19
0.40
1.27
0.25
0.75
0°
8°
9.73
0.65
1.67
SCALE
INCHES
MIN
0.004
0.012
0.009
0.496
0.394
0.291
MAX
0.104
0.012
0.020
0.013
0.512
0.419
0.299
0
1.0
0
1.0
2mm
EUROPEAN PROJECTION
0.050 BSC
19
0.016
0.010
0°
0.050
0.030
8°
0.383
0.026
0.066
ISSUE DATE
19.04.2011
REVISION
02
PG-DSO-19-4
Preliminary Datasheet
19
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Outline Dimensions
Notes
1. You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”:
http://www.infineon.com/cms/en/product/technology/packages/.
Preliminary Datasheet
20
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Application Hints
6
Application Hints
This chapter gives some hints on how the auxiliary supplies can be set up to supply the driver.
6.1
Driver Supply Set up
Figure 10 shows the standard topology where the auxiliary supply is connected between VCC2 and VEE2. In this
case the internal regulator is used to create the -19 V VReg supply.
+5V
CVCC1
GND
IN
VCC1
+5V
CVCC1
JFDrv
VCC2
GND1
GND
MDrv
EN
VReg
IN
CLJFG
CVReg
CVEE2
Isolated,
floating
IN
VCC1
VCC2
GND1
MDrv
EN
VReg
IN
-22V … -28V
VEE2
CVEE2
Isolated,
floating
CLJFG
-22V … -28V
BSEN
1EDI30J12Cx
Figure 10
CVReg
VEE2
BSEN
a)
JFDrv
b)
1EDI30J12Cx
Isolated and floating supply, a) cascode configuration, b) only JFET
It is also possible to supply the driver with -19 V directly. In this case (shown in Figure 11) the pins VReg and VEE2
are shorted and CVEE2 as well as the corresponding diode are not needed. It has to be made sure that the -19 V
supply is accurate within +/- 5 %.
+5V
CVCC1
GND
IN
VCC1
+5V
CVCC1
JFDrv
VCC2
GND1
GND
MDrv
EN
VReg
IN
CLJFG
VEE2
CVReg
IN
-19V +/- 5%
Figure 11
JFDrv
VCC2
GND1
EN
Isolated,
floating
IN
MDrv
CVReg
VReg
Isolated,
floating
CLJFG
-19V +/- 5%
VEE2
BSEN
a)
VCC1
BSEN
1EDI30J12Cx
b)
1EDI30J12Cx
Isolated and floating direct supply, a) cascode configuration, b) only JFET
The third option of connecting the auxiliary supply is to connect it between the MOSFET drain and VEE2
(Figure 12). Since the auxiliary power supply is not connected to the reference node of the driver stage (VCC2)
an additional 10 Ω resistor is needed between the power supply and the VEE2 pin. This resistor limits the current
coming from the supply when current is switched through the MOSFET. When a current is switched through the
MOSFET a voltage is induced in the parasitic inductances of the MOSFET which leads to a voltage difference
between the reference node of the driver and the supply reference node. As in the first described method the
internal regulator is active and supplies the driver stages with the needed -19 V.
When using this power supply option for switches which MOSFET drains are connected to the same node and
potential one power supply can be used to power two or more driver stages. The best example are the low side
switches in a H-bridge (see Figure 6 and Figure 14).
Preliminary Datasheet
21
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Application Hints
+5V
CVCC1
GND
IN
VCC1
JFDrv
VCC2
GND1
MDrv
EN
VREG
IN
CLJFG
CVReg
CVEE2
-22V … -28V
VEE2
Isolated,
fixed
BSEN
1EDI30J12Cx
Figure 12
MOSFET drain related supply
An alternative method of supplying the low-side driver is via a bootstrapping scheme from the high-side supply
(shown in Figure 13). This cascaded bootstrap supply transfers the needed energy via a bootstrapping capacitor
(CBS) to the low-side.
Additional information on how to activate the bootstrap mode can be found in Chapter 3.2.4 Bootstrap supply
mode and start up.
HV supply
GND
VCC1
IN
GND
MDrv
VReg
CVReg
CVEE2
CLJFG
HS_IN
Bootstrap HS
BSEN
GND
EN
LS_IN
IN
+5V
CVCC1
GND
MDrv
CVReg
CVEE2
CLJFG
LS_IN
VReg
IN
CLJFG
CVEE2
-19V … -28V
Bootstrap HS
VCC1
JFDrv
VCC2
GND1
MDrv
EN
VReg
IN
CLJFG
CVReg
CVEE2
VEE2
BSEN
Figure 13
EN
CVReg
1EDI30J12Cx
VEE2
a)
MDrv
BSEN
JFDrv
VReg
VCC2
GND1
CBS
VCC2
GND1
HV
related
JFDrv
VEE2
Bootstrap LS
1EDI30J12Cx
VCC1
VCC1
-19V … -28V
VEE2
+5V
CVCC1
+5V
CVCC1
VCC2
GND1
EN
HS_IN
HV
related
JFDrv
Bootstrap LS
+5V
CVCC1
HV supply
BSEN
1EDI30J12Cx
b)
1EDI30J12Cx
Cascaded bootstrap supply, a) cascode configuration, b) only JFET
In case a normally off behavior is not needed or desired the JFET can be used without the cascoded MOSFET.
Topologies depicting a normally on circuit are shown in Figure 10 b), Figure 11 b) and Figure 13 b).
In these cases a short circuit in a failure event cannot be prevented due to the fact that every safety aspect of the
Direct Drive JFET Topology is deactivated.
Preliminary Datasheet
22
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Application Hints
800V
+5V
VCC1
CVCC1
GND
LS_IN
+5V
JFDrv
GND1
MDrv
EN
VReg
IN
CLJFG
VCC1
CVCC1
VCC2
GND
CVReg
CVEE2
LS_IN
+5V
VCC1
CVCC1
GND
LS_IN
VCC2
GND1
MDrv
EN
VReg
IN
VEE2
BSEN
BSEN
+5V
EN
VReg
IN
CLJFG
VCC1
CVCC1
VCC2
MDrv
CVReg
CVEE2
1EDI30J12Cx
JFDrv
GND1
-25V_H
CLJFG
VEE2
1EDI30J12Cx
C
JFDrv
CVReg
CVEE2
GND
LS_IN
JFDrv
VCC2
GND1
MDrv
EN
VREG
IN
CLJFG
VEE2
VEE2
BSEN
BSEN
1EDI30J12Cx
CVReg
CVEE2
C
1EDI30J12Cx
-25V
Figure 14
Application drawing for high side bootstrap supply (FB), low-side normally-on (refer to
Figure 6 for low-side normally-off variant)
Figure 14 shows a full bridge with a normally-on low-side configuration. The high-side stages are powered with
bootstrapping while the low-side stages are powered with an isolated and fixed supply that is GND related.
The corresponding normally-off variant can be seen in Figure 6
6.2
Gate clamping diode
The external gate clamping diode connects the JFET gate to the MOSFET drain potential. In case the auxiliary
power supply of the driver is not active due to power supply failure or reverse startup this diode ensures the
normally-off behavior of the circuit.
Due to the normally-on behavior of the JFET and the cascoded normally-off MOSFET, the voltage is being blocked
at the MOSFET. The Vds voltage that is building up over the switched-off MOSFET is being mirrored to the JFET
Vgs voltage via gate clamping diode connecting the MOSFET drain to the JFET gate until the level reaches the
JFET pinch off voltage and the JFET itself blocks the voltage (see Chapter 3.2.3).
The voltage rating of the diode is mainly depenent on the parasitic inductance between JFET source and
MOSFET drain times the current change over time. An Infineon BAS16 diode capable of blocking 80 V should be
sufficient for most layouts.
A resistor should be placed in series with the diode to limit the current through the diode. It has to be matched to
the maximum current rating of the used diode. Typically it should be around 5 times larger than the gate resistance
in order not to slow down the turn-on of the JFET.
Preliminary Datasheet
23
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Application Hints
6.3
Reference Layout, Thermal Layout, Layout Guide Lines
In this chapter the reference and thermal layouts are displayed. Please contact our local sales team for additional
information about placement priorities.
RGJ
CVREG
Figure 15
Typical layout of a1EDI30J12CP driver stage
Figure 16
Thermal reference layout of a 1EDI30J12CP driver stage
Preliminary Datasheet
24
PMOS
BSC30P03NS3G
DVREG
DVEE2
LCR
CVCC1
CVCC1.2
RGM
1EDI30J12CP
IN
CVEE2
LCD
EN
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
Application Hints
Thermal Vias
35µm copper
50x40x1.5mm FR4
1.5mm
35µm copper
Figure 17
PCB Stack - Thermal reference layout
Preliminary Datasheet
25
Rev. 1.3, 2014-11-12
EiceDRIVER™ Enhanced
1EDI30J12CP
1EDI EiceDRIVER™ Enhanced 1EDI30J12Cx
Revision History: 2014-11-12, Rev. 1.31)
Previous Revision: 1.2
Page
Subjects (major changes since last revision)
---
Removed 1EDI30J12CL (150mil variant)
---
1) Preliminarydatasheeet may be changed without notice.
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Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
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TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Preliminary Datasheet
Rev. 1.3, 2014-11-12
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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