Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V Full-pack package which can be installed to the heat sink with one screw ■ Absolute Maximum Ratings (TC=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage VCEO –110 V Emitter to base voltage VEBO –5 V Peak collector current ICP –10 A Collector current IC –6 A dissipation Ta=25°C 50 PC Junction temperature Tj Storage temperature Tstg φ3.2±0.1 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 Parameter Collector power TC=25°C 21.0±0.5 15.0±0.2 ● 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ■ Features ● 15.0±0.3 11.0±0.2 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) Internal Connection C W 3 150 ˚C –55 to +150 ˚C B E ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –130V, IE = 0 –100 µA ICEO VCE = –110V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –30mA, IB = 0 –110 hFE1 VCE = –5V, IC = –1A 2000 hFE2* VCE = –5V, IC = –5A 5000 Collector cutoff current Forward current transfer ratio V 30000 Collector to emitter saturation voltage VCE(sat) IC = –5A, IB = –5mA –2.5 V Base to emitter saturation voltage VBE(sat) IC = –5A, IB = –5mA –3.0 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = –5A, IB1 = –5mA, IB2 = 5mA, VCC = –50V 20 MHz 0.9 µs 2.5 µs 1.7 µs Rank classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SB1253 PC — Ta IC — VCE VCE(sat) — IC –12 –100 50 40 (1) 30 20 IB=–5mA –10 (2) –8 –1mA – 0.9mA – 0.8mA – 0.7mA – 0.6mA –6 – 0.5mA –4 – 0.4mA – 0.3mA – 0.2mA –2 10 – 0.1mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –10 –12 –30 –10 VCE=–5V 30000 25˚C TC=100˚C –25˚C 3000 1000 TC=–25˚C –1 25˚C 100˚C –1 –3 –10 –30 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –100 Collector current IC (A) –1 –3 –10 Collector current IC (A) ton, tstg, tf — IC Area of safe operation (ASO) 100 –100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C 10 tstg 3 tf 1 Non repetitive pulse TC=25˚C –30 Collector current IC (A) 30 ton 0.3 –10 ICP t=1ms –3 IC DC –1 10ms – 0.3 0.1 – 0.1 – 0.03 0.03 0.01 0 –4 –8 –12 Collector current IC (A) –16 – 0.01 –1 25˚C –25˚C –1 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (A) 1000 10000 –3 TC=100˚C –3 Cob — VCB 100000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 – 0.1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) –8 –10 hFE — IC – 0.3 2 –6 –30 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 –4 IC/IB=1000 – 0.3 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Collector output capacitance Cob (pF) 60 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) 70 Collector to emitter saturation voltage VCE(sat) (V) 80 IE=0 f=1MHz TC=25˚C 300 100 30 10 3 1 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Power Transistors 2SB1253 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3