Power Transistors 2SD2549 Silicon NPN triple diffusion planar type For power amplification Unit: mm ■ Features ● ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power TC=25°C dissipation 20 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 150 ˚C –55 to +150 ˚C 3.0±0.5 1.4±0.2 Symbol 0.8±0.1 1 2 0.55±0.15 2.54±0.3 3 5.08±0.5 1:Gate 2:Drain 3:Source TO–220D Full Pack Package Conditions min typ max Unit ICES VCE = 70V, VBE = 0 100 µA ICEO VCE = 70V, IB = 0 100 µA 1 mA Emitter cutoff current IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 30mA, IB = 0 80 * hFE1 Forward current transfer ratio 2.6±0.1 1.6±0.2 (TC=25˚C) Parameter Collector cutoff current 2.9±0.2 φ3.2±0.1 W 2 4.6±0.2 9.9±0.3 15.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 ● VCE = 4V, IC = 1A 70 hFE2 VCE = 4V, IC = 3A 10 V 250 Base to emitter voltage VBE VCE = 4V, IC = 3A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A 0.7 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 4.5 µs 0.5 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD2549 PC — Ta IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink TC=25˚C 15 10 (2) 7 6 5 4 90mA 80mA 70mA 60mA 50mA 40mA 30mA IB=100mA 3 2 20mA 5 10mA 1 (3) 20 40 60 80 100 120 140 160 2 4 10 10–2 1 0.6 0.8 1.0 1.2 Non repetitive pulse TC=25˚C 10 ICP 3 IC t=1ms 10ms 1 1s 0.3 0.1 10–1 1 10 (1) (2) 10 1 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 0.8A (8W) and with a 100 × 100 × 2mm Al heat sink 10 0.4 30 102 Collector current IC (A) Time t (s) 0.2 Base to emitter voltage VBE (V) Ta=25˚C Rth(t) — t Thermal resistance Rth(t) (˚C/W) 0 Area of safe operation (ASO) 100 1 2 10 1 10–2 10 Collector current IC (A) 0.1 3 12 Collector current IC (A) Forward current transfer ratio hFE Ta=25˚C 10–1 8 hFE — IC 10–1 10–2 6 103 1 10–3 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 5 0 0 Ambient temperature Ta (˚C) 6 1 0 0 2 Ta=25˚C 7 (1) 20 8 Collector current IC (A) 25 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 8 Collector current IC (A) Collector power dissipation PC (W) 30 100 1000 1 3 10 30 100 300 Collector to emitter voltage VCE (V)