1N4151

R
1N4151
SMALL SIGNAL SWITCHING DIODE
S E M I C O N D U C T O R
DO-35 (GLASS)
FEATURES
Silicon epitaxial planar diode
1.083(27.5)
MIN
JF
Fast switching diode
500mW power dissipation
0.079(2.0)
MAX
DIA
This diode is also available in the MiniMelf case with the type
designation LL4151
0.150(3.8)
MAX
MECHANICAL DATA
1.083(27.5)
MIN
Case: DO-35 glass case
Polarity: Color band denotes cathode end
0.020(0.52)
MAX
DIA
Weight: Approx. 0.13gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
DC Blocking Voltage
Non-Repetitive Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at TA=25°C and f 50Hz
Non-Repetitive Peack Forward Surge Current @t=1.0s
Power dissipation at TA=25°C
Symbol
Value
Units
VR
VRM
50
75
Volts
Volts
IAV
150
1)
mA
IFSM
500
1)
500
mA
Ptot
TJ
mW
Junction temperature
200
-65 to +200
Storage temperature range
TSTG
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
C
C
ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
Forward voltage
Leakage current
Typ.
Min.
Units
Max
at IF=50mA
VF
at VR=50V
IR
1
50
at VR=20V , TJ=150°C
IR
50
mA
CJ
2
pF
Junction capacitance at VR=VF=0V
Reverse breakdown voltage tested with 5mA pulse
Reverse recovery time from IF=10mA to IR=10mA to IR=1mA,
from IF=10mA to IR=1mA VR=6V, RL=100W
Thermal resistance junction to ambient
Rectification efficiency at f=100MHz, VRF=2V
V(BR)R
trr
trr
R
V
nA
75
V
4
2
350
JA
ns
1)
K/W
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
JINAN JINGHENG ELECTRONICS CO., LTD.
11-25
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES 1N4151
FIG 2: DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
FIG 1-FORWARD CHARACTERISTICS
mA
W
10 3
10 4
TJ=25 C
f=1KHz
10 2
IF
10 3
TJ=100 C
TJ=25 C
rf
10
10 2
1
10
-1
10
-2
1
10
0
1
2V
10 -2
10 -1
1
VF
10 2
10
mA
IF
FIG 3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
mW
1000
900
1.1
TJ=25 C
f=1MHz
800
700
Ptot
Cj(VR)
Cj(0V)
600
500
1.0
0.9
400
300
0.8
200
100
0.7
0
0
100
200 C
0
TA
JINAN JINGHENG ELECTRONICS CO., LTD.
2
4
6
8
10V
VR
11-26
HTTP://WWW.JINGHENGGROUP.COM
RATINGS AND CHARACTERISTIC CURVES 1N4151
FIG.5 RECTIFICATION EFFICIENCY MEASUREMENT
CIRCUIT
FIG 6: LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
nA
10 4
5
2
10 3
D.U.T.
5
60W
2nF
VRF=2V
5KW
VO
IR
2
10 2
5
2
10
5
VR=50V
2
1
0
100
200°C
Tj
FIG 7: ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
I
V=tp/T T=1/fp
IFRM
tp
10
IFRM
V=0
T
0.1
0.2
1
0.5
0.1
10 -5
10 -4
10 -3
10 -2
10 -1
1
10S
tp
JINAN JINGHENG ELECTRONICS CO., LTD.
11-27
HTTP://WWW.JINGHENGGROUP.COM
Similar pages