BD546, BD546A, BD546B, BD546C

BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD545 Series
●
85 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
BD546B
V CBO
E
T
E
L
O
S
B
O
Collector-emitter voltage (IB = 0) (see Note 1)
Continuous collector current
-80
-100
BD546
-40
BD546B
VCEO
BD546C
Emitter-base voltage
-60
BD546C
BD546A
UNIT
-40
BD546
BD546A
VALUE
-60
-80
V
V
-100
VEBO
-5
V
IC
-15
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
85
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Operating free air temperature range
TA
-65 to +150
°C
Operating junction temperature range
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TL
260
°C
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = -30 mA
MIN
IB = 0
(see Note 4)
BD546
-40
BD546A
-60
BD546B
-80
BD546C
-100
TYP
MAX
V
VCE = -40 V
VBE = 0
BD546
-0.4
Collector-emitter
VCE = -60 V
VBE = 0
BD546A
-0.4
cut-off current
VCE = -80 V
VBE = 0
BD546B
-0.4
VCE = -100 V
VBE = 0
BD546C
-0.4
Collector cut-off
VCE = -30 V
IB = 0
BD546/546A
-0.7
current
VCE = -60 V
IB = 0
BD546B/546C
-0.7
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
-1
VCE =
-4 V
IC =
-1 A
VCE =
-4 V
IC =
-5 A
VCE =
-4 V
IC = -10 A
Collector-emitter
IB = -625 mA
IC =
saturation voltage
IB =
IC = -10 A
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
-2 A
mA
mA
mA
60
(see Notes 4 and 5)
25
10
-5 A
-0.8
(see Notes 4 and 5)
-1
E
T
E
L
O
S
B
O
VCE =
UNIT
-4 V
IC = -10 A
(see Notes 4 and 5)
VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
-1.8
V
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.47
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -6 A
IB(on) = -0.6 A
IB(off) = 0.6 A
0.4
µs
toff
Turn-off time
VBE(off) = 4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.7
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS634AJ
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1
-0·1
TCS634AB
-10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC =
IC =
IC =
IC =
-1·0
-0·1
E
T
E
L
O
S
B
O
-1·0
-10
-1 A
-3 A
-6 A
-10 A
-0·01
-0·01
IC - Collector Current - A
-0·1
-1·0
-10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·6
TCS634AC
VBE - Base-Emitter Voltage - V
VCE = -4 V
TC = 25 °C
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS634AE
-10
-1·0
-0·1
BD546
BD546A
BD546B
BD546C
E
T
E
L
O
S
B
O
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AC
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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