BD744, BD744A, BD744B, BD744C

BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD743 Series
TO-220 PACKAGE
(TOP VIEW)
90 W at 25°C Case Temperature
15 A Continuous Collector Current
20 A Peak Collector Current
B
1
C
2
Customer-Specified Selections Available
E
3
This series is OBSOLETEAND
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD744
Collector-base voltage (IE = 0)
BD744A
V CBO
BD744C
BD744
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
BD744A
BD744B
BD744C
UNIT
-50
E
T
E
L
O
S
B
O
BD744B
VALUE
V CEO
VEBO
-70
V
-90
-110
-45
-60
V
-80
-100
-5
IC
-15
IB
-5
V
A
Peak collector current (see Note 1)
ICM
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
90
W
½LIC2
90
mJ
-65 to +150
°C
Continuous base current
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
Ptot
-20
2
TA
-65 to +150
Tstg
-65 to +150
Tj
TL
260
A
A
W
°C
°C
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICBO
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
TEST CONDITIONS
MIN
BD744
-45
BD744A
-60
BD744B
-80
BD744C
-100
TYP
MAX
V
IC = -30 mA
IB = 0
VCE = -50 V
VBE = 0
BD744
-0.1
VCE = -70 V
VBE = 0
BD744A
-0.1
VCE = -90 V
VBE = 0
BD744B
-0.1
Collector cut-off
VCE = -110 V
VBE = 0
BD744C
-0.1
current
VCE = -50 V
VBE = 0
TC = 125°C
BD744
-5
VCE = -70 V
VBE = 0
TC = 125°C
BD744A
-5
VCE = -90 V
VBE = 0
TC = 125°C
BD744B
-5
VCE = -110 V
VBE = 0
TC = 125°C
BD744C
Collector cut-off
VCE = -30 V
IB = 0
BD744/744A
-0.1
current
VCE = -60 V
IB = 0
BD744B/744C
-0.1
VEB =
-5 V
IC = 0
VCE =
-4 V
IC = -1 A
breakdown voltage
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
(see Note 5)
UNIT
mA
-5
-0.5
mA
mA
40
E
T
E
L
O
S
B
O
VCE =
-4 V
IC = -5 A
VCE =
-4 V
IC = -15 A
IB =
-0.5 A
IC = -5 A
IB =
-5 A
IC = -15 A
VCE =
-4 V
IC = -5 A
VCE =
-4 V
IC = -15 A
VCE = -10 V
IC = -1 A
f = 1 kHz
25
VCE = -10 V
IC = -1 A
f = 1 MHz
5
(see Notes 5 and 6)
20
150
5
-1
(see Notes 5 and 6)
-3
-1
(see Notes 5 and 6)
-3
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.4
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
td
Delay time
20
ns
tr
Rise time
IC = -5 A
IB(on) = -0.5 A
IB(off) = 0.5 A
120
ns
ts
Storage time
VBE(off) = 4.2 V
RL = 6 Ω
tp = 20 µs, dc ≤ 2%
600
ns
tf
Fall time
300
ns
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE = -4 V
tp = 300 µs, duty cycle < 2%
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS638AA
1000
hFE - DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = 125°C
TC = 25°C
TC = -55°C
100
10
-0·1
-1·0
TCS638AB
-10
IC
= 10
IB
tp = 300µs, duty cycle < 2%
-1·0
-0·1
E
T
E
L
O
S
B
O
-10
-100
-0·01
-0·1
-1·0
IC - Collector Current - A
TC = -55°C
TC = 25°C
TC = 125°C
-10
-100
IC - Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-100
SAS638AA
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
tp = 50 ms,
d = 0.1 = 10%
DC Operation
-10
-1·0
-0·1
BD744
BD744A
BD744B
BD744C
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS637AA
Ptot - Maximum Power Dissipation - W
100
90
80
70
60
50
40
30
20
E
T
E
L
O
S
B
O
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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