BDW54, BDW54A, BDW54B, BDW54C, BDW54D

BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW53, BDW53A, BDW53B, BDW53C and
BDW53D
●
40 W at 25°C Case Temperature
●
4 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 1.5 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDW54A
Collector-base voltage (IE = 0)
E
T
E
L
O
S
B
O
BDW54B
V CBO
BDW54D
-120
BDW54
-45
V CEO
BDW54C
BDW54D
Emitter-base voltage
-80
-100
BDW54B
UNIT
-60
BDW54C
BDW54A
Collector-emitter voltage (IB = 0) (see Note 1)
VALUE
-45
BDW54
V
-60
-80
V
-100
-120
VEBO
-5
IC
-4
A
IB
-50
mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
40
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
½LIC2
25
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Continuous collector current
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
V CE(sat)
VEC
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
TEST CONDITIONS
IC = -30 mA
IB = 0
MIN
(see Note 5)
BDW54
-45
BDW54A
-60
BDW54B
-80
BDW54C
-100
BDW54D
-120
TYP
MAX
V
VCE = -30 V
IB = 0
BDW54
-0.5
VCE = -30 V
IB = 0
BDW54A
-0.5
VCE = -40 V
IB = 0
BDW54B
-0.5
VCE = -50 V
IB = 0
BDW54C
-0.5
VCE = -60 V
IB = 0
BDW54D
-0.5
VCB = -45 V
IE = 0
BDW54
-0.2
VCB = -60 V
IE = 0
BDW54A
-0.2
VCB = -80 V
IE = 0
BDW54B
-0.2
VCB = -100 V
IE = 0
BDW54C
-0.2
Collector cut-off
VCB = -120 V
IE = 0
BDW54D
-0.2
current
VCB = -45 V
IE = 0
TC = 150°C
BDW54
-5
VCB = -60 V
IE = 0
TC = 150°C
BDW54A
-5
VCB = -80 V
IE = 0
TC = 150°C
BDW54B
-5
VCB = -100 V
IE = 0
TC = 150°C
BDW54C
-5
VCB = -120 V
IE = 0
TC = 150°C
BDW54D
-5
VEB =
-5 V
IC = 0
VCE =
-3 V
IC = -1.5 A
VCE =
-3 V
IC =
VCE =
-3 V
IC = -1.5 A
IB =
-30 mA
IC = -1.5 A
IB =
-40 mA
IC =
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
E
T
E
L
O
S
B
O
IE =
-4 A
-4 A
-4 A
-2
750
(see Notes 5 and 6)
UNIT
mA
mA
mA
20000
100
(see Notes 5 and 6)
-2.5
-2.5
(see Notes 5 and 6)
-4
IB = 0
-3.5
V
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
3.125
°C/W
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -2 A
IB(on) = -8 mA
IB(off) = 8 mA
toff
Turn-off time
VBE(off) = 5 V
RL = 15 Ω
tp = 20 µs, dc ≤ 2%
1
µs
4.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS115AD
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
-1·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
E
T
E
L
O
S
B
O
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS115AB
-2·0
-5·0
0
-0·5
IC - Collector Current - A
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS115AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-5·0
IC - Collector Current - A
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS115AC
-1·0
-0·1
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
E
T
E
L
O
S
B
O
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AB
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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