BDW53, BDW53A, BDW53B, BDW53C, BDW53D

BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW54, BDW54A, BDW54B, BDW54C and
BDW54D
●
40 W at 25°C Case Temperature
●
4 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 1.5 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDW53A
Collector-base voltage (IE = 0)
E
T
E
L
O
S
B
O
BDW53B
V CBO
BDW53D
120
BDW53
45
V CEO
BDW53C
BDW53D
Emitter-base voltage
80
100
BDW53B
UNIT
60
BDW53C
BDW53A
Collector-emitter voltage (IB = 0) (see Note 1)
VALUE
45
BDW53
V
60
80
V
100
120
VEBO
5
IC
4
A
IB
50
mA
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
40
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
½LIC2
25
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Continuous collector current
Continuous base current
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
V
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
TEST CONDITIONS
IC = 30 mA
IB = 0
MIN
(see Note 5)
BDW53
45
BDW53A
60
BDW53B
80
BDW53C
100
BDW53D
120
TYP
MAX
V
VCE = 30 V
IB = 0
BDW53
0.5
VCE = 30 V
IB = 0
BDW53A
0.5
VCE = 40 V
IB = 0
BDW53B
0.5
VCE = 50 V
IB = 0
BDW53C
0.5
VCE = 60 V
IB = 0
BDW53D
0.5
VCB = 45 V
IE = 0
BDW53
0.2
VCB = 60 V
IE = 0
BDW53A
0.2
VCB = 80 V
IE = 0
BDW53B
0.2
VCB = 100 V
IE = 0
BDW53C
0.2
Collector cut-off
VCB = 120 V
IE = 0
BDW53D
0.2
current
VCB = 45 V
IE = 0
TC = 150°C
BDW53
5
VCB = 60 V
IE = 0
TC = 150°C
BDW53A
5
VCB = 80 V
IE = 0
TC = 150°C
BDW53B
5
VCB = 100 V
IE = 0
TC = 150°C
BDW53C
5
VCB = 120 V
IE = 0
TC = 150°C
BDW53D
5
VEB =
5V
IC = 0
VCE =
3V
IC = 1.5 A
VCE =
3V
IC =
VCE =
3V
IC = 1.5 A
IB =
30 mA
IC = 1.5 A
IB =
40 mA
IC =
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
E
T
E
L
O
S
B
O
IE =
4A
4A
4A
2
750
(see Notes 5 and 6)
UNIT
mA
mA
mA
20000
100
(see Notes 5 and 6)
2.5
2.5
(see Notes 5 and 6)
4
IB = 0
3.5
V
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
3.125
°C/W
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 2 A
IB(on) = 8 mA
IB(off) = -8 mA
toff
Turn-off time
VBE(off) = -5 V
RL = 15 Ω
tp = 20 µs, dc ≤ 2%
1
µs
4.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS110AD
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
0·5
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS110AB
2·0
5·0
0
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDW53, BDW53A, BDW53B, BDW53C, BDW53D
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS110AC
1·0
0·1
BDW53
BDW53A
BDW53B
BDW53C
BDW53D
E
T
E
L
O
S
B
O
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AB
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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