BFP540ESD Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier 3 • High ESD robustness 2 4 typical value 1000 V (HBM) 1 • Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz • Pb-free (RoHS compliant) and halogen-free package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540ESD Marking AUs 1=B Pin Configuration 2=E 3=C 4=E - Package - SOT343 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 4.5 TA = -55 °C 4 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation1) Ptot 250 mW Junction temperature TJ 150 °C Ambient temperature TA -65 ... 150 Storage temperature TStg -65 ... 150 mA TS ≤ 77°C 1T S is measured on the emitter lead at the soldering point to the pcb 1 2013-09-13 BFP540ESD Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 290 K/W Values Unit Electrical Characteristics at T A = 25 °C, unless otherwise specified Symbol Parameter min. typ. max. 4.5 5 - V ICES - - 10 µA ICBO - - 100 nA IEBO - - 10 µA hFE 50 110 170 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-13 BFP540ESD Electrical Characteristics at TA = 25 °C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 21 30 - Ccb - 0.14 0.24 Cce - 0.41 - Ceb - 0.59 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - Gms - 21.5 - dB Gma - 16 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 16 18.5 - - 14 - IP3 - 24.5 - P-1dB - 11 - IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz Third order intercept point at output2) dB dBm VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz 1/2 ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 1G 3 2013-09-13 BFP540ESD Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 300 K/W RthJS 250 Ptot [mW] 200 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 150 100 50 10 1 -7 10 0 0 25 50 75 100 125 10 -6 10 -5 10 -4 10 -3 10 -2 s 150 10 0 tp TS [°C] Permissible Pulse Load Collector-base capacitance Ccb = ƒ (VCB) Ptotmax/PtotDC = ƒ(tp ) f = 1 MHz 10 1 P totmax/ PtotDC 0.3 0.25 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Ccb [pF] 0.2 0.15 0.1 0.05 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 0 0 tp 2 4 6 8 10 12 14 VCB [V] 4 2013-09-13 BFP540ESD Third order Intercept Point IP3 = ƒ (IC) Transition frequency fT = ƒ(IC) (Output, ZS = ZL = 50 Ω ) VCE = parameter in V, f = 2 GHz VCE = parameter, f = 900 MHz 30 30 4.00V 25 2.00V 25 3.00V 1.50V 3 − 4.5V 20 1.00V fT [GHz] IP3 [dBm] 20 15 15 2.00V 10 10 1.00V 0.75V 5 5 0.50V 0 0 0 10 20 30 40 50 60 70 80 0 10 20 30 40 IC [mA] 50 60 70 80 90 100 IC [mA] Power gain Gma, Gms = ƒ (f) Power gain Gma, Gms = ƒ (IC) VCE = 3 V, IC = 25 mA VCE = 3 V f = parameter in GHz 45 28 26 40 24 0.90GHz 35 22 20 30 G [dB] G [dB] Gms 25 18 1.80GHz 16 20 2.40GHz 14 G ma 3.00GHz 12 15 |S |2 10 4.00GHz 8 5.00GHz 21 10 6.00GHz 5 6 0 1 2 3 4 5 6 0 f [GHz] 10 20 30 40 50 60 70 80 90 100 IC [mA] 5 2013-09-13 BFP540ESD Power gain Gma, Gms = ƒ (VCE ) Noise figure F = ƒ(IC ) IC = 20 mA VCE = 3 V, f = parameter in GHz f = parameter in GHz ZS = ZSopt 5 28 0.90GHz 26 4.5 24 4 22 1.80GHz 3.5 20 3 F [dB] G [dB] 2.40GHz 18 3.00GHz 16 2.5 2 14 4.00GHz 1.5 12 f = 6GHz f = 5GHz f = 4GHz f = 3GHz f = 1.8GHz 5.00GHz 1 6.00GHz 10 0.5 8 f = 0.9GHz 0 6 0 1 2 3 4 5 6 0 10 20 30 40 VCE [V] 50 60 70 80 6 7 Ic [mA] Noise figure F = ƒ(IC ) VCE = 3V, f = 1.8 GHz Noise figure F = ƒ(f) VCE = 3 V, ZS = ZSopt 4.5 2 4 1.8 3.5 1.6 3 1.4 F [dB] F [dB] 2.5 1.2 2 1 1.5 IC = 20mA 0.8 1 I = 5.0mA C Z = 50Ω S Z =Z S 0.5 0.6 Sopt 0 0.4 0 10 20 30 40 50 60 70 80 0 Ic [mA] 1 2 3 4 5 f [GHz] 6 2013-09-13 BFP540ESD Source impedance for min. noise figure vs. frequency VCE = 3 V, IC = 5 mA / 20 mA 1 1.5 2 0.5 0.4 3 0.3 4 0.2 5 0.1 2.4GHz 0.1 0 0.2 0.3 0.4 0.5 3GHz 10 1.8GHz 1 0.9GHz 1.5 2 3 Ic = 5.0mA 4GHz −0.1 4 5 5GHz −10 Ic = 20mA −0.2 −0.3 −5 −4 −3 −0.4 6GHz −2 −0.5 −1.5 −1 7 2013-09-13 Package SOT343 8 BFP540ESD 2013-09-13 BFP540ESD Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 2013-09-13