BFP540ESD Data Sheet (623 KB, EN)

BFP540ESD
Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
3
• High ESD robustness
2
4
typical value 1000 V (HBM)
1
• Outstanding Gms = 21.5 dB @ 1.8 GHz
Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540ESD
Marking
AUs
1=B
Pin Configuration
2=E
3=C
4=E
-
Package
-
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA = 25 °C
4.5
TA = -55 °C
4
Collector-emitter voltage
VCES
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
1
Collector current
IC
80
Base current
IB
8
Total power dissipation1)
Ptot
250
mW
Junction temperature
TJ
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
TStg
-65 ... 150
mA
TS ≤ 77°C
1T
S is measured on the emitter lead at the soldering point to the pcb
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BFP540ESD
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
290
K/W
Values
Unit
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Parameter
min.
typ.
max.
4.5
5
-
V
ICES
-
-
10
µA
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
50
110
170
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
1For
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP540ESD
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
21
30
-
Ccb
-
0.14
0.24
Cce
-
0.41
-
Ceb
-
0.59
-
AC Characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 50 mA, VCE = 4 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
-
0.9
1.4
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
-
1.3
-
Gms
-
21.5
-
dB
Gma
-
16
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
|S21e|2
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
16
18.5
-
-
14
-
IP3
-
24.5
-
P-1dB
-
11
-
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz
Third order intercept point at output2)
dB
dBm
VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
1/2
ma = |S21e / S12e | (k-(k²-1) ), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1G
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BFP540ESD
Total power dissipation P tot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(tp)
10 3
300
K/W
RthJS
250
Ptot [mW]
200
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
150
100
50
10 1 -7
10
0
0
25
50
75
100
125
10
-6
10
-5
10
-4
10
-3
10
-2
s
150
10
0
tp
TS [°C]
Permissible Pulse Load
Collector-base capacitance Ccb = ƒ (VCB)
Ptotmax/PtotDC = ƒ(tp )
f = 1 MHz
10 1
P totmax/ PtotDC
0.3
0.25
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Ccb [pF]
0.2
0.15
0.1
0.05
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
0
0
tp
2
4
6
8
10
12
14
VCB [V]
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BFP540ESD
Third order Intercept Point IP3 = ƒ (IC)
Transition frequency fT = ƒ(IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter in V, f = 2 GHz
VCE = parameter, f = 900 MHz
30
30
4.00V
25
2.00V
25
3.00V
1.50V
3 − 4.5V
20
1.00V
fT [GHz]
IP3 [dBm]
20
15
15
2.00V
10
10
1.00V
0.75V
5
5
0.50V
0
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
IC [mA]
50
60
70
80
90
100
IC [mA]
Power gain Gma, Gms = ƒ (f)
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V, IC = 25 mA
VCE = 3 V
f = parameter in GHz
45
28
26
40
24
0.90GHz
35
22
20
30
G [dB]
G [dB]
Gms
25
18
1.80GHz
16
20
2.40GHz
14
G
ma
3.00GHz
12
15
|S |2
10
4.00GHz
8
5.00GHz
21
10
6.00GHz
5
6
0
1
2
3
4
5
6
0
f [GHz]
10
20
30
40
50
60
70
80
90
100
IC [mA]
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BFP540ESD
Power gain Gma, Gms = ƒ (VCE )
Noise figure F = ƒ(IC )
IC = 20 mA
VCE = 3 V, f = parameter in GHz
f = parameter in GHz
ZS = ZSopt
5
28
0.90GHz
26
4.5
24
4
22
1.80GHz
3.5
20
3
F [dB]
G [dB]
2.40GHz
18
3.00GHz
16
2.5
2
14
4.00GHz
1.5
12
f = 6GHz
f = 5GHz
f = 4GHz
f = 3GHz
f = 1.8GHz
5.00GHz
1
6.00GHz
10
0.5
8
f = 0.9GHz
0
6
0
1
2
3
4
5
6
0
10
20
30
40
VCE [V]
50
60
70
80
6
7
Ic [mA]
Noise figure F = ƒ(IC )
VCE = 3V, f = 1.8 GHz
Noise figure F = ƒ(f)
VCE = 3 V, ZS = ZSopt
4.5
2
4
1.8
3.5
1.6
3
1.4
F [dB]
F [dB]
2.5
1.2
2
1
1.5
IC = 20mA
0.8
1
I = 5.0mA
C
Z = 50Ω
S
Z =Z
S
0.5
0.6
Sopt
0
0.4
0
10
20
30
40
50
60
70
80
0
Ic [mA]
1
2
3
4
5
f [GHz]
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BFP540ESD
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, IC = 5 mA / 20 mA
1
1.5
2
0.5
0.4
3
0.3
4
0.2
5
0.1
2.4GHz
0.1
0
0.2 0.3 0.4 0.5
3GHz
10
1.8GHz
1
0.9GHz
1.5
2
3
Ic = 5.0mA
4GHz
−0.1
4 5
5GHz
−10
Ic = 20mA
−0.2
−0.3
−5
−4
−3
−0.4
6GHz
−2
−0.5
−1.5
−1
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Package SOT343
8
BFP540ESD
2013-09-13
BFP540ESD
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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endangered.
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