BFP540FESD Data Sheet (533 KB, EN)

BFP540FESD
Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
3
• Excellent ESD performance
2
4
1
typical value 1000 V (HBM)
• Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB
• Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540FESD
Marking
AUs
1=B
Pin Configuration
2=E
3=C
4=E
-
Package
-
TSFP-4
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
Unit
V
TA = 25 °C
4.5
TA = -55 °C
4
Collector-emitter voltage
VCES
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
1
Collector current
IC
80
Base current
IB
8
Total power dissipation1)
Ptot
250
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
mA
TS ≤ 80 °C
1T
S is
-55 ... 150
measured on the emitter lead at the soldering point to the pcb
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BFP540FESD
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
Unit
280
K/W
Values
Unit
Electrical Characteristics at T A = 25 °C, unless otherwise specified
Symbol
Parameter
min.
typ.
max.
4.5
5
-
V
ICES
-
-
10
µA
ICBO
-
-
100
nA
IEBO
-
-
10
µA
hFE
50
110
170
-
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, I B = 0
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
1For
the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP540FESD
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Symbol
Values
Parameter
Unit
min.
typ.
max.
21
30
-
Ccb
-
0.16
0.26
Cce
-
0.4
-
Ceb
-
0.55
-
AC Characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 50 mA, VCE = 4 V, f = 1 GHz
Collector-base capacitance
pF
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Minimum noise figure
dB
NFmin
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
-
0.9
1.4
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
-
1.3
-
Gms
-
20
-
dB
Gma
-
14.5
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
|S21e|2
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
15.5
18
-
-
13
-
IP3
-
24.5
-
P-1dB
-
11
-
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz
Third order intercept point at output2)
dB
dBm
VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
1G
1/2
ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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BFP540FESD
Total power dissipation P tot = ƒ(TS)
300
PTOT
mW
200
150
100
50
0
0
30
60
90
°C
150
TS
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Package TSFP-4
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BFP540FESD
2013-09-05
BFP540FESD
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
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intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
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components can reasonably be expected to cause the failure of that life-support
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endangered.
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