Transistors 2SD2358 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 ■ Features 0.65 max. 14.5±0.5 • Low collector to emitter saturation voltage VCE(sat): < 0.15 V • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification Complementary to 2SB1538 +0.1 Symbol Rating Unit Collector to base voltage VCBO 10 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.2 A Collector current IC 1 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2.5±0.5 2 3 2.5±0.1 Parameter 1 +0.1 2.5±0.5 ■ Absolute Maximum Ratings Ta = 25°C 0.45−0.05 0.45−0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 1 µA Collector cutoff current ICBO VCB = 7 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 10 Collector to emitter voltage VCEO IC = 1 mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance hFE VCE = 2 V, IC = 100 mA VCE(sat) IC = 500 mA, IB = 20 mA fT Cob V 200 800 0.15 V VCB = 5 V, IE = −50 mA, f = 200 MHz 120 MHz VCB = 20 V, IE = 0, f = 1 MHz 30 pF 1