Transistor 2SD2074 Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 ● 14.5±0.5 +0.1 0.45–0.05 2.5±0.5 * (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2.5±0.5 2 2.5±0.1 ■ Absolute Maximum Ratings 1 +0.1 ● 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. Allowing supply with the radial taping. 0.45–0.05 ● 1.0 1.0 ■ Features ● (1.45) 0.8 0.2 0.7 0.5 4.5±0.1 For low-frequency output amplification For muting For DC-DC converter (HW type) (Ta=25˚C) Parameter Symbol Conditions min typ max Unit 100 nA Collector cutoff current ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 hFE1*1 VCE = 2V, IC = 0.5A*2 200 hFE2 VCE = 2V, IC = 1A*2 60 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f= 1MHz ON resistanse Ron*3 Forward current transfer ratio VCB = 25V, IE = 0 0.13 FE1 hFE1 R 200 ~ 350 V V 200 MHz 10 pF Ω 1.0 Rank classification Rank 0.4 1.2 *3R on *1h V 800 Measurement circuit 1kΩ *2 Pulse measurement IB=1mA S 300 ~ 500 T 400 ~ 800 VB VV VA f=1kHz V=0.3V VB Ron= ✕1000(Ω) VA–VB 1 2SD2074 Transistor PC — Ta IC — VCE 1.0 IB=4.0mA 0.6 0.4 0.2 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 0 40 80 120 160 200 0 Ambient temperature Ta (˚C) 1 2 4 5 6 30 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 800 Ta=75˚C 600 25˚C –25˚C 400 200 0.1 0.3 1 3 10 Collector current IC (A) 1000 8 Ron measuring circuit IB=1mA 300 ON resistance Ron (Ω) 12 VB 100 V 30 VA f=1kHz V=0.3V 10 3 1 4 0.3 0 10 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 VCB=10V Ta=25˚C 350 300 250 200 150 100 0.1 0.01 0.03 0.1 0.3 1 3 Base current IB (mA) 0 –1 –3 –10 –30 Emitter current IE (mA) Ron — IB 16 3 Ta=75˚C 0.3 50 0 0.01 0.03 10 IE=0 f=1MHz Ta=25˚C 1 1 400 Cob — VCB 20 3 VCE=2V Collector current IC (A) 24 10 fT — I E 1000 10 0.01 0.01 0.03 30 Collector current IC (A) 1200 Forward current transfer ratio hFE IC/IB=10 1 IC/IB=25 hFE — IC 100 3 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Ta=25˚C 3.5mA 1.0 0.8 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.2 10 –100