MA111 Fast Recovery Diodes (FRD) MA695 Silicon planer type (cathode common) Unit : mm For high-frequency rectification ● Cathode common dual type ● High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 21.0±0.5 15.0±0.2 ■ Features 5.0±0.2 3.2 ø3.2±0.1 16.2±0.5 12.5 3.5 Solder Dip 0.7 15.0±0.3 11.0±0.2 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 10.9±0.5 1 ■ Absolute Maximum Ratings (Ta= 25˚C) Symbol Rating Unit Repetitive peak reverse voltage Parameter VRRM 400 V Non-repetitive peak reverse voltage VRSM 400 V Average forward current IF(AV) 20 A Non-repetitive peak forward surge current IFSM* 120 A Junction temperature Tj – 40 to +150 ˚C Storage temperature Tstg – 40 to +150 ˚C 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F(a)(TOP-3 Full-Pack Package) ■ Internal Connection * Sine half wave : 10ms/cycle 1 2 3 ■ Electrical Characteristics (Ta= 25˚C) Parameter Symbol Repetitive peak reverse current Forward voltage (DC) Reverse recovery time typ max Unit VRRM= 400V, TC= 25˚C 50 µA IRRM2 VRRM= 400V, Tj=150˚C 10 mA VF IF=10A, TC= 25˚C 1 V trr* IF=1A, IR=1A Rth(j-c) Thermal resistance min Condition IRRM1 Rth(j-a) Flat direct current between junction and case Note 1. Rated input/output frequency : 10MHz 2. * trr measuring circuit 50Ω 50Ω trr IF D.U.T IR 5.5Ω 0.1 × IR 100 ns 1.5 ˚C/W 41.6 ˚C/W MA695 Fast Recovery Diodes (FRD) IF – VF IR – VR 102 PD(AV) – IF(AV) 103 40 100˚C IR (µA) 102 Ta=150˚C 1 25˚C Reverse current Forward current IF (A) 10 10–1 10–2 10 25˚C 1 10–2 0 0.2 0.4 0.6 Forward voltage 0.8 VF 1.0 1.2 (V) 32 28 (A) t0 t1 24 t0/t1=1/2 20 1/3 1/6 16 DC 12 8 4 0 25 60 80 100 Case temperature 120 TC 140 (˚C) 0 100 200 300 Reverse voltage IF(AV) – TC IF(AV) 100˚C 10–1 10–3 Average forward current Average forward current PD(AV) (W) Ta=150˚C 160 400 500 VR (V) 600 t0 t1 t0/t1=1/6 30 1/3 1/2 DC 20 10 0 0 4 8 12 16 20 Average forward current IF(AV) (A) 24