2n4403.pdf

2N4403
TO - 92 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
min. 0.49 (12.5) 0.18 (4.6)
MECHANICAL DATA
*
*
*
*
*
0.14 (3.6)
0.18 (4.6)
* Power dissipation
O
PCM:
0.6 W(Tamb=25 C)
* Collector current
ICM: - 0.6 A
* Collector-base voltage
V(BR)CBO: - 40 V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to+150OC
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
max. ∅
0.022 (0.55)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.098 (2.5)
Ratings at 25 o C ambient temperature unless otherwise specified.
Dimensions in inches
and (millimeters)
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Bottom
(TO-92)
MAXIMUM TATINGES ( @ TA = 25OC unless otherwise noted)
RATINGS
SYMBOL
VALUE
UNITS
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
PD
600
mW
Max. Operating Temperature Range
TJ
150
o
C
TSTG
-55 to +150
o
C
o
Storage Temperature Range
O
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted)
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Compliant", "100% Sn plating (Pb-free)".
SYMBOL
MIN.
TYP.
MAX.
R qJA
-
-
417
UNITS
o
C/W
2010-5
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (I C = -1.0 mAdc, I B = 0)
V(BR)CEO
-40
-
Vdc
Collector-Base Breakdown Voltage (I C = -0.1mAdc, I E = 0)
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdown Voltage (I E = -0.1mAdc, I C = 0)
V(BR)EBO
-5.0
-
Vdc
Base Cutoff Current (V CE = -35Vdc, V BE(off) = -0.4Vdc)
IBEV
-
-0.1
uAdc
Collector Cutoff Current (V CE = -35Vdc, V EB = -0.4Vdc)
ICEX
-
-0.1
uAdc
DC Current Gain (I C = -0.1mAdc, V CE = -1.0Vdc)
30
-
(I C = -1.0mAdc, V CE = -1.0Vdc)
60
-
ON CHARACTERISTICS (1)
(I C = -10mAdc, V CE = -1.0Vdc)
100
-
(I C = -150mAdc, V CE = -2.0Vdc)
100
300
(I C = -500mAdc, V CE = -2.0Vdc)
20
-
Collector-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc)
hFE
-
-
-0.4
-
-0.75
-0.75
-0.95
-
-1.3
fT
200
-
MHz
Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz)
Ccb
-
8.5
pF
Input Capacitance (V EB = -0.5Vdc, I C = 0, f= 1.0MHz)
Ceb
-
30
pF
Input lmpedance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hie
1.5
15
kohms
Voltage Feedback Ratio (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hre
0.1
8.0
X 10 -4
Small-Signal Current Gain (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hfe
60
500
-
Output Admittance (V CE = -10Vdc, I C = -1.0mAdc, f= 1.0kHz)
hoe
1.0
100
umhos
td
-
15
tr
-
20
ts
-
225
tf
-
30
(I C = -500mAdc, I B = -50mAdc)
Base-Emitter Saturation Voltage (1) (I C = -150mAdc, I B = -15mAdc)
(I C = -500mAdc, I B = -50mAdc)
VCE(sat)
VBE(sat)
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I C = -20mAdc, V CE = -10Vdc, f= 100MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = -30Vdc, V EB = -2.0Vdc, I C = -150mAdc, I B1 = -15mAdc)
(V CC = -30Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc)
<300ms,Duty Cycle<2.0%
Note : Pulse Test: Pulse Width-
ns
ns
RATING AND CHARACTERISTICS CURVES ( 2N4403
O
25 C
100OC
30
10
7.0
5.0
Ceb
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
Ccb
5.0
VCC=30V
IC/IB=10
3.0
2.0
1.0
0.7
0.5
QT
0.3
3.0
QA
0.2
2.0
0.1
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0
10
20 30
10
20
Figure 1. Capacitances
50
70 100
200
300
500
Figure 2. Charge Data
100
100
IC/IB=10
70
50
70
20
t, TIME (ns)
30
30
20
10
10
7.0
7.0
10
20
30
50
70 100
200
VCC=30V
IC/IB=10
50
tr @ VCC= 30V
tr @ VCC= 10V
td@ VBE(off)= 2V
td @ VBE(off)= 0V
300
5.0
500
10
IC,COLLECTOR CURRENT (mA)
20
30
50
70 100
Figure 4. Rise Times
300
IC/IB=10
200
IC/IB=20
100
70
IB1= IB2
ts' =ts -1/8tf
50
30
10
200
IC,COLLECTOR CURRENT (mA)
Figure 3. Turn-On Time
ts',STORAGE TIME (ns)
t, TIME (ns)
30
IC, COLLECTOR CURRENT (mA)
REVERSE VOLTAGE (V)
5.0
)
20
30
50
70 100
200
IC,COLLECTOR CURRENT (mA)
Figure 5. Storage Time
300
500
300
500
RATING AND CHARACTERISTICS CURVES (
)
VCE = -10Vdc, TA = 25 C
O
Bandwidth = 1.0Hz
10
10
8
8.0
IC = 1.0mA, RS = 430W
IC = 500uA, RS = 560W
IC = 50uA, RS = 2.7kW
IC = 100uA, RS = 1.6kW
6
4
RS = OPTIMUM SOURCE RESISTANCE
2
0
0.01 0.02 0.05 0.1 0.2 0.5
1.0 2.0 5.0 10 20
NF,NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
f = 1 kHz
6.0
4.0
2.0
0
50
50 100
f, FREQUENCY (KHz)
Figure 6.Frequency Effects
50k
hie, INPUT IMPEDANCE (OHMS)
700
hfe, CURRENT GAIN
500
300
200
100
70
50
0.5 0.7 1.0
2.0 3.0
20k
50k
10k
5k
2k
1k
500
200
100
0.1
5.0 7.0 10
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
Figure 8.Cuttent Gain
Figure 9.Input Impedance
20
500
hoe, OUTPUT ADMITTANCE (umhos)
hre, VOLTAGE FEEDBACK RATIO (X 10-4)
5.0k 10k
20k
IC, COLLECTOR CURRENT (mAdc)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.1
1.0k 2.0k
Figure 7.Source Resistance Effects
100k
0.2 0.3
500
RS, SOURCE RESISTANCE (OHMS)
1000
30
0.1
100 200
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
100
50
20
10
5.0
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 10.Voltage Feedback Ratio
Figure 11.Temperature Coefficients
RATING AND CHARACTERISTICS CURVES (
hFE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0V
VCE = 10V
2.0
2N 4403
)
TJ = 125OC
25OC
1.0
-55OC
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR - EMITTER VOLTAGE (V)
Figure 12. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5
0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
IB, BASE CURRENT (mA)
Figure 13. Collector Saturation Region
0.5
TJ = 25OC
VBE(sat)@IC/IB = 10
0.6
VBE(sat)@VCE = 10V
0
VOLTAGE (V)
O
0.8
COEFFICIENT (mV/ C)
1.0
0.4
0.2
0..2
0.5 1.0 2.0
5.0 10
20
0.5
1.0
1.5
QVS for VBE
2.0
VCE(sat)@IC/IB = 10
0
0.1
QVC for VCE(sat)
50 100 200
500
2.5
0.1
0..2
0.5 1.0 2.0
5.0 10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 14. "ON" Voltages
Figure 15. Temperature Coefficients
500
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in
such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
Similar pages