RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 0.037(0.950)TYP 0.006(0.150) 0.003(0.080) 0.043(1.100) 0.035(0.900) 0.020(0.500) 0.012(0.300) 0.020(0.50) 0.004(0.100) 0.000(0.000) 0.100(2.550) 0.089(2.250) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. 0.118(3.000) 0.110(2.800) Dimensions in inches and (millimeters) RATINGS SYMBOL VALUE UNITS - - mW Zener Current ( see Table "Characteristics" ) o O Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 Max. Operating Temperature Range TJ -55 to +150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Max. Instantaneous Forward Voltage at IF= 10mA NOTES : 1. Alumina=0.4*0.3*0.024in.99.5% alumina SYMBOL MIN. TYP. MAX. R θJA - - 417 VF - - - UNITS o C/W Volts 2006-3 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (I C = -10 mAdc, I B = 0) V(BR)CEO -40 - Vdc Collector-Base Breakdown Voltage (I C = -10µAdc, I E = 0) V(BR)CBO -60 - Vdc Emitter-Base Breakdown Voltage (I E = -10µAdc, I C = 0) V(BR)EBO -5.0 - Vdc ICEX - -50 nAdc - -0.02 - -20 - -50 DC Current Gain (I C = -0.1mAdc, V CE = -10Vdc) 35 - (I C = -1.0mAdc, V CE = -10Vdc) 50 - 75 - (I C = -150mAdc, V CE = -10Vdc)(2) - - (I C = -500mAdc, V CE = -10Vdc)(2) 30 - - -0.4 - -1.6 - -1.3 - -2.6 Collector Cutoff Current (V CE = -30Vdc, V BE(off) = -5.0Vdc) Collector Cutoff Current (V CB = -50Vdc, I E = 0) O (V CB = -50Vdc, I E = 0, TA= 125 C) Base Current (V CE = -30Vdc, V EB(off) = -0.5Vdc) ICBO IB µAdc nAdc ON CHARACTERISTICS (I C = -10mAdc, V CE = -10Vdc) Collector-Emitter Saturation Voltage (2) (I C = -150mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc) Base-Emitter Saturation Voltage (2) (I C = -150mAdc, I B = -15mAdc) hFE VCE(sat) VBE(sat) (I C = -500mAdc, I B = -50mAdc) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS fT 200 - MHz Output Capacitance (V CB = -10Vdc, I E = 0, f= 1.0MHz) Cobo - 8.0 pF Input Impedance (V EB = -2.0Vdc, I C = 0, f= 1.0MHz) Cibo - 30 pF ton - 45 td - 10 Rise Time tr - 40 Turn-Off Time toff - 100 ts - 80 tf - 30 Current-Gain-Bandwidth Product (2)(3) (I C = -50mAdc, V CE = -20Vdc, f= 100MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Storage Time (V CC = -30Vdc ,I C = -150mAdc, I B1 = -15mAdc) (V CC = -6.0Vdc, I C = -150mAdc, I B1 = I B2 = -15mAdc) Fall Time <300µs,Duty Cycle<2.0% NOTES : 2. Pulse Test: Pulse Width3. fT is defined as the frequency at which |hfe| extrapolates to unity RECTRON ns ns RATING AND CHARACTERISTICS CURVES ( MMBT2907LT1 ) hFE,NORMALIZED CURRENT GAIN 3.0 VCE= -1.0V VCE= -10V 2.0 TJ = 125OC 25OC 1.0 -55OC 0.7 0.5 0.3 0.2 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -30 -50 IC,COLLECTOR CURRENT (mA) VCE,COLLECTOR - EMITTERVOLTAGE(VOLTS) Figure 1. DC Current Gain ±1.0 ±0.8 IC = - 1.0mA - 10mA - 100 mA - 500 mA ±0.6 ±0.4 ±0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 IB,BASE CURRENT (mA) Figure 2. Collector Saturation Region 500 100 70 50 300 VCC=-30V IC/IB=10 TJ=25OC tr 200 t,TIME(ns) t,TIME(ns) 300 200 30 20 td @ VBE(off)=0V 7.0 5.0 2.0 V -20 -30 tf 100 70 50 30 t's=t's-1/8tf 20 10 3.0 -5.0 -7.0 -10 VCC=-30V IC/IB=10 IB1=IB2 TJ=25OC -50 -70 -100 -200 -300 -500 10 7.0 5.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 IC,COLLECTOR CURRENT (mA) IC,COLLECTOR CURRENT (mA) Figure 3. Turn - On Time Figure 4. Turn - Off Time -500 RECTRON RATING AND CHARACTERISTICS CURVES ( MMBT2907LT1 ) 10 10 8.0 8.0 NF,NOISE FIGURE (dB) IC = - 1.0mA , RS=430Ω - 500 µA , RS=560Ω - 50 µA , RS=2.7kΩ - 100 µA , RS=1.6kΩ 6.0 4.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 C,CAPACITANCE(pF) 4.0 100 200 500 1.0k 2.0k 5.0k 10k 20k f,FREQUENCY(KHz) RS,SOURCE RESISTANCE(OHMS) Figure 5.Frequency Effects Figure 6.Source Resistance Effects Ceb 20 10 7.0 Ccb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 REVERSE VOLTAGE(VOLTS) 50k 400 300 200 100 80 VCE = -20V TJ = 25OC 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 IC,COLLECTOR CURRENT(mA) Figure 7.Capacitances Figure 8.Currunt-Gain Bandwidth Product +0.5 -1.0 -0.8 -0.6 0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = -10V -0.4 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 RθVC for VCE(sat) ±0.5 ±1.0 ±1.5 RθVB for VBE ±2.0 VCE(sat) @ IC/IB = 10 0 -0.1 -0.2 COEFFICIENT (mV/ 5C) TJ = 25OC V,VOLTAGE (VOLTS) IC = - 50µA - 100 µA - 500 µA - 1.0mA 0 50 50 100 30 2.0 -0.1 6.0 2.0 RS= OPTIMUM SOURCE RESISTANCE 2.0 fT, CURRENT±GAIN Ð BANDWIDTH PRODUCT(MHz) NF,NOISE FIGURE (dB) f = 1.0 kHz -50 -100 -200 -500 ±2.5 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 IC,COLLECTOR CURRENT(mA) IC,COLLECTOR CURRENT(mA) Figure 9."On" Voltages Figure 10.Temperature Coefficients RECTRON