FFM101W RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FFM107W SURFACE MOUNT FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram SMX MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .209 (5.31) .185 (4.70) .110 (2.79) .086 (2.18) .180 (4.57) .091 (2.31) .067 (1.70) .160 (4.06) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS .008 (0.20) .011 (0.28) .007 (0.18) .010 (0.25) .071 (1.80) .051 (1.30) .059 (1.50) .035 (0.89) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25oC unless otherwise noted) SYMBOL RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 55 o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range FFM101W FFM102W FFM103W FFM104W FFM105W FFM106W FFM107W UNITS VRRM 50 100 200 400 600 800 1000 VRMS 35 70 140 280 420 560 700 Volts Volts VDC 50 100 200 400 600 800 1000 Volts IO 1.0 Amps I FSM 30 Amps (Note 2) Rθ JL (Note 3) Rθ JA CJ T J , T STG 30 70 15 -55 to + 150 SYMBOL FFM101W FFM102W FFM103W FFM104W FFM105W FFM106W FFM107W UNITS VF 1.3 50 5.0 Volts uAmps uAmps 0 0 C/ W C/W pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 25oC Maximum DC Reverse Current at @T A = 25 o C Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 4) IR @T A = 125 o C 100 trr NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 5.”Fully ROHS compliant”,”100% Sn plating(Pb-free)”. 150 250 500 uAmps nSec 2005-10 FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES ( FFM101W THRU FFM107W ) 1.0 .8 .6 .4 Single Phase Half Wave 60Hz Resistive or Inductive Load .2 0 0 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 20 10 1 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 10 4 TJ = 100 1.0 .4 .1 .04 TJ = 25 .01 2 4 6 8 10 20 40 60 80100 NUMBER OF CYCLES AT 60Hz FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 TJ = 25 Pulse Width = 300us 1% Duty Cycle 1.0 .1 .01 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (-) D.U.T PULSE 0 GENERATOR (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. -0.25A (+) -1.0A 1cm JUNCTION CAPACITANCE, (pF) 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) (+) 25 Vdc (approx) (-) 8.3ms Single Half Sine-Wave (JEDED Method) 0 SET TIME BASE FOR 50/100 ns/cm FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 TJ = 25 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.071 MIN. (1.80 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON