RHRU15090, RHRU150100 April 1995 File Number 3589.2 150A, 900V - 1000V Hyperfast Diodes Features RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery<90ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • Avalanche Energy Rated Ordering Information • Power Switching Circuits PACKAGE • Reverse Voltage Up To1000V • Planar Construction Applications • Switching Power Supplies • General Purpose PACKAGING AVAILABILITY PART NUMBER • Operating Temperature+175oC BRAND RHRU15090 TO-218 RHRU15090 RHRU150100 TO-218 RHR150100 Package JEDEC STYLE TO-218 ANODE NOTE: When ordering, use the entire part number. CATHODE (FLANGE) Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +42oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ 1 RHRU15090 RHRU150100 UNITS 900 900 900 150 1000 1000 1000 150 V V V A 300 300 A 1500 1500 A 375 50 -65 to +175 375 50 -65 to +175 W mj oC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 RHRU15090, RHRU150100 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS RHRU15090 SYMBOL TEST CONDITION RHRU150100 MIN TYP MAX MIN TYP MAX UNITS VF IF = 150A, TC = +25oC - - 3.0 - - 3.0 V VF IF = 150A, TC = +150oC - - 2.5 - - 2.5 V IR VR = 900V, TC = +25oC - - 500 - - - µA = +25oC - - - - - 500 µA VR = 900V, TC = +150oC - - 3.0 - - - mA VR = 1000V, TC = +150oC - - - - - 3.0 mA IF = 1A, dIF/dt = 100A/µs - - 90 - - 90 ns IF = 150A, dIF/dt = 100A/µs - - 100 - - 100 ns tA IF = 150A, dIF/dt = 100A/µs - 65 - - 65 - ns tB IF = 150A, dIF/dt = 100A/µs - 30 - - 30 - ns 0.4 oC/W VR = 1000V, TC IR tRR RθJC - - 0.4 - - DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). RθJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width. D = duty cycle. V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R1 L1 = SELF INDUCTANCE OF R4 +LLOOP Q1 +V1 +V3 t1 ≥ 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) ≤ R4 10 Q2 0 LLOOP t2 R2 t1 IF DUT dIF dt tRR tA tB 0 Q4 0.25 IRM t3 C1 0 IRM R4 Q3 -V2 -V4 R3 VR VRM FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 2 RHRU15090, RHRU150100 Typical Performance Curves 3000 500 +175oC IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 1000 100 +175oC +100oC +25oC 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 100 +100oC 10 1.0 +25oC 0.1 0.01 3.5 0 200 FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP IF(AV) , AVERAGE FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 100 tRR 60 tA 40 tB 20 0 1 10 DC 80 SQ. WAVE 40 0 25 50 75 125 100 150 175 TC , CASE TEMPERATURE (oC) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT L FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES R + VDD 1MΩ VAVL DUT 12V 1000 120 IF, FORWARD CURRENT (A) 130Ω 800 160 100 150 IMAX = 1A L = 40mH R < 0.1Ω EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 & Q2 ARE 1000V MOSFETs Q1 600 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE 120 80 400 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) Q2 130Ω IL CURRENT SENSE I V VDD t0 12V FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT 3 t1 t2 t FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS