UM8511 Rev.01 Reliability Report FOR UM8511 July 11, 2012 UNION SEMICONDUCTOR, INC. Written by Approved by Fang JJ Product Engineer Ivan Product Manager Conclusion The UM8511 successfully meets the quality and reliability standards required of all Union products. In addition, Union’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Union’s quality and reliability standards. Table of Contents I. ........Device Description II. ........Manufacturing Information III. ........Packaging Information IV. ........Die Information V. ....... Reliability Evaluation I. Device Description A. General The UM8511 is a (L-C) low pass filter array with integrated TVS diodes. It is designed to suppress unwanted EMI signals and provide electrostatic discharge (ESD) protection in portable electronic equipment. This device utilizes solid-state silicon-avalanche technology for superior clamping performance and DC electrical characteristics. They have been optimized for protection of color LCD and camera lines in cellular phones and other portable electronics. The device consists of eight identical circuits comprised of TVS diodes for ESD protection, and a C-L-C network for EMI filtering. A typical inductor value of 17nH and a capacitor value of 12pF are used to achieve 19dB minimum attenuation from 800MHz to 2.7GHz. The TVS diodes provide effective suppression of ESD voltages in excess of ±15kV (air discharge) and ±8kV (contact discharge) per IEC 61000-4-2, level 4. B. Absolute Maximum Ratings Lead Soldering Temperature (TL) 260°C (10 sec.) Operating Temperature (Top) -40 to +85 °C Storage Temperature ( TSTG) -55 to +150 °C Maximum Junction Temperature （TJMAX ) 125 °C II. Manufacturing Information A. Process: Bipolar B. Wafer Type: UU033-BM C. Fabrication Location: Tai Wan D. Assembly Location: P.R.China III. Packaging Information A. Package Type: DFN3.3*1.3-16L B. Lead Frame: COPPER C. Lead Finish: NIPDAU D. Die Attach: Conductive Epoxy E. Bond wire: Gold (0.8 mil) F. Mold Material: G770HCD G. Flammability Rating: Class UL94-V0 I. Classification of Moisture Sensitivity per JEDEC standard JESD22-A113: Level 1 IV. Die Information A. Dimensions: 1090 x 420 um2（2 Dies） B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Al/Si/Cu D. Backside Metallization: Ag E. Minimum Metal Width: Metal 3.0 um F. Minimum Metal Spacing: Metal 3.0 um G. Bond pad Dimensions: 70x70 um2 H. Isolation Dielectric: SiO2 I. Die Separation Method: Wafer Saw V. Reliability Evaluation A. Operating Life Test Test Item High Temp Operating Life JESD22-A108-B Failure Test Condition Package Identification Sample Number Size of Failure 77 0 Electrical 125 ºC,168h, parameters 1.1Vcc DFN16 & functionality Test Circuit 5.5V GND IN1 IN2 IN3 IN4 IN5 IN6 IN7 IN8 OUT1 OUT2 OUT3 OUT4 OUT5 OUT6 OUT7 OUT8 9 10 11 12 13 14 15 16 17 1 2 3 4 5 6 7 8 UM8511 B. Reliability evaluation test Test Item Test Condition Failure Identification Sample Number Size of Failure DFN16 231 0 DFN16 77 0 DFN16 77 0 DFN16 77 0 DFN16 77 0 Package Electrical Precondition 125ºC,24h,85ºC/85%RH, parameters JESD22-A113-D 168h, 260ºC,3 Times & functionality & SAT Temp. Cycling -65-150ºC,Dewell=15Min, JESD22-A104-C 1000 Cycles Autoclave 121ºC,100%RH,2atm, JESD22-A102-C 96hrs Unbiased Temp/Humidity JESD22-A103-B parameters & functionality Electrical parameters & functionality Electrical 130ºC/85%RH, 96hrs JESD22-A118-B High Temp Storage Electrical parameters & functionality Electrical 150ºC,1000h parameters & functionality C. ESD The UM8511 die type has been found to have all pins able to withstand a transient pulse of ± 15KV (Air) and 8 KV (Contact), per IEC 61000-4-2, level 4. (Reference following ESD Test Circuit). Terminal A: I/O Pin connected to terminal A. Terminal B: GND connected to terminal B. A B