isl70219aseh see test report

Test Report 002
Single Event Effects (SEE) Testing of the ISL70219ASEH
Dual Operational Amplifier
Introduction
SEE Test Objectives
The intense proton and heavy ion environment encountered in
space applications can cause a variety of single-event effects
(SEE) in electronic circuitry, including single event upset (SEU),
single event transient (SET), single event functional Interrupt
(SEFI) and single event burnout (SEB). SEE can lead to system
level performance issues including disruption, degradation
and destruction. For predictable and reliable space system
operation, individual electronic components should be
characterized to determine their SEE response. This report
discusses the results of SEE testing performed on the
ISL70219ASEH dual operational amplifier.
The ISL70219ASEH was tested to determine its susceptibility
to single event burnout (SEB, destructive ion effects) and to
characterize its single event transient (SET) behavior over
different operating conditions and over several linear energy
transfer (LET) levels.
Throughout this document reference is made to linear energy
transfer (LET) and the units of this parameter is always
understood to be MeV•cm2/mg.
SEE Test Facility
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of particle beams with the various
energy, flux, and fluence levels needed for advanced radiation
testing.
SEE Test Set-up
Product Description
The ISL70219ASEH is a dual version of the ISL70419SEH
quad high performance operational amplifier and is fabricated
in Intersil’s 40V bonded wafer SOI process with deep trench
isolation for precision bipolar analog products. The
ISL70219ASEH is a metal variation of the ISL70419SEH die
that only connects two of the four amplifiers on the die.
Consequently, the ISL70219ASEH is identical in silicon to two
of the ISL70419SEH amplifiers.
Product Documentation
For more information about the ISL70219ASEH, refer to the
documentation shown in following.
Related Literature
ISL70219ASEH datasheet
SEE testing is carried out with the sample in an active
configuration. A schematic of the ISL70219ASEH SEE test
fixture is shown in Figure 1. It is the same configuration used
for testing another dual amplifier, the ISL70244SEH. Four
instantiations of the schematic allowed four ISL70219ASEH to
be mounted on a board for simultaneous heavy ion irradiation.
For SEB the sum of the four ISL70219ASEH supply currents
were monitored before, during and after each irradiation to
look for damage resulting in changes in supply current. Both
outputs of each ISL70219ASEH were summed through
another operational amplifier (not being irradiated). These
summed outputs were also monitored for change in the SEB
testing. For SET, the summed output provided a trigger signal
for an oscilloscope that then captured and stored both
individual amplifier outputs. In this way, four oscilloscopes
were able to monitor and capture SET in both channels of all
four dual operational amplifiers under test.
ISL70219ASEH SMD 5962-14226
ISL70419SEH datasheet
AN1944, “Single Events Effects Report”
UG007, “ISL70219ASEHEV1Z Evaluation Board User Guide”
October 24, 2014
TR002.0
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Test Report 002
TP14
TP13
TP12
TP11
TP9
TP10
SUMV+_U1
TP21
C13
0.1UF
TP22
VREF_U1
V+_U1
R25
0.01UF
10K
R29
10K
0
OUTB1
R26
7
R14
0
R10
V-_U1
C14
OUTA1
UNNAMED_1_ISL28127_I210_NIN
2
4
C15
0.1UF
1UF
3
D1
TP19
U5
C4
BAS40-04
C2
1UF
C3
V-
SUM_U1
6
V+
3
2
1
10K
ISL28127FBZ
C16
C6
0.1UF
0.01UF
0.1UF
C5
SUMV-_U1
C7
UNNAMED_1_SMCAP_I102_B
TP20
UNNAMED_1_SMCAP_I101_A
0.01UF
0.01UF
C3 AND C5 CLOSE TO PART
C6 AND C7 CLOSE TO PART
C8
100K
TP18
OUTA1
R17
UNNAMED_1_SMRES_I111_B
4
5
DNP
10
9
3
8
4
7
5
6
10
OPEN
OUT B
C9
OUTB1
9
TP15
8
OPEN
7
R24
R18
6
DNP
3
UNNAMED_1_SMRES_I12_B
10K
U1
2
R28
UNNAMED_1_SMRES_I12_A
R2
1
C12
2
R6
10K
UNNAMED_1_SMCAP_I127_A
OPEN
1
100K
TP1
C10
UNNAMED_1_SMCAP_I127_B
DNP
100K
DUAL OP AMP
0
OPEN
IN+ A
100
R21
R20
R5
DNP
C1
UNNAMED_1_SMCAP_I133_B
R4
TP2
DNP
10K
R23
R27
0
DNP
C11
UNNAMED_1_SMRES_I120_B
R1
TP6
TP17
OPEN
R12
R22
UNNAMED_1_SMRES_I120_A
TP5
R9
OPEN
R3
OUT A
OUTA1
UNNAMED_1_SMCAP_I29_B
IN- A
TP16
100
100K
K10.A
R19
UNNAMED_1_SMRES_I129_A
10K
IN- B
TP3
R7
UNNAMED_1_SMRES_I123_A
TP4
DNP
VREF_U1
DRAWN BY:
TP7
ENGINEER:
DATE:
TIM KLEMANN
IN+ B
R13
R15
R16
RELEASED BY:
DATE:
DNP
100K
100K
DNP
UPDATED BY:
DATE:
TITLE:
ISL70244
SEE TEST BOARD
R8
UNNAMED_1_SMRES_I124_A
DON'T USE VREF FOR NORMAL INPUT
TP8
DNP
D
KIRAN BERNARD
04/17/2014
R11
FOUR-IN-ONE
TESTER
$CDS_IMAGE|intersil_color_sm.jpg|1194|282
MASK#
FILENAME:
HRDWR ID
SHEET
~\ISL70244\ISL70244SEH_SEE1A
FIGURE 1. SCHEMATIC OF THE ISL70219ASEH SEE TEST CIRCUIT
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Test Report 002
SEB Testing of the ISL70219ASEH
Dual Operational Amplifier
deviation and selecting the largest event counts out of the eight
channels on the four units tested for each LET and dividing by the
beam fluence, yielded the lower bound for ±100mV SET cross
sections as depicted in Figure 2. The values represent the cross
section lower bound of an individual amplifiers since they are
based on the individual channel outputs events of ±100mV or
larger. It should be noted that these cross sections for ±100mV
events differ substantially from those for the ±20mV event
counts in Table 2 as many events fell into the range between
±20mV and ±100mV. These are also smaller than the cross
sections reported in AN1944, “Single Event Effects Testing of the
ISL70419SEH”. Those cross sections are for ±200mV events and
are for the entire part (any of four channels).
Four ISL70219ASEH units on a single board were irradiated
simultaneously with the summed supply currents and the
summed dual outputs of each unit, monitored pre and post
irradiation for change. Significant changes in output or current
were deemed indications of permanent damage caused by the
combination of voltage stress and ion impact. The supply voltage
was varied to identify the limit when combined with ions of
LET = 86 MeV•cm2/mg. The results are presented in Table 1.
The parts survived ±17V and ±18V while one unit failed at
±18.5V under irradiation.
SET Testing of the ISL70219ASEH
Dual Operational Amplifier
±100mV SET CROSS SECTION
LOWER BOUND (cm2)
6.0E-04
The parts were tested for SET four at a time as in the SEB testing.
The dual amplifiers of each device were summed through
another (non-irradiated) amplifier to provide an oscilloscope
trigger signal if either operational amplifier experienced an SET
at the output. The individual channels were then monitored on
two other oscilloscope channels. The scope traces were captured
and stored for later processing. Table 2 summarizes the SET
testing done.
An error was made on run 302 and the oscilloscope ranges were
left to accommodate the ±2.25V tests and so captures were
clipped at the oscilloscope range limit of about ±2V. The marked
disparity in capture counts reflects differences in the
oscilloscopes that were used, each DUT using one oscilloscope.
This makes the ratio of the event counts to the fluence only a
lower bound on the effective cross section represented by the
device. Post processing the data for SET that exceeded ±100mV
5.0E-04
4.0E-04
3.0E-04
2.0E-04
1.0E-04
0.0E+00
0
10
20
30
40
50
60
70
LET, MeV.cm2/mg
FIGURE 2. CROSS SECTION LOWER BOUND OF ±100mV DEVIATION
SET PER AMPLIFIER vs LET
TABLE 1. SUMMARY OF SEB TESTING OF THE ISL70219ASEH
RUN
DUT
1
801
2
3
4
1
802
2
3
4
1
803
2
3
4
GAIN
VIN
(V)
VS±
(V)
SUM
ICC+
(mA)
PRE
SUM
ICC+
(mA)
POST
SUM
ICC(mA)
PRE
SUM
ICC(mA)
POST
1
0.1
±17
6.059
6.053
5.534
5.529
10
1
0.1
±18
6.071
6.069
5.545
5.544
10
1
0.1
10
±18.5
6.081
>100
5.554
>100
VOUT SUM
(V)
PRE
VOUT SUM
(V)
POST
0.2003
0.2002
0.2004
0.2004
2.231
2.231
2.224
2.223
0.2001
0.2002
0.2002
0.2003
2.231
2.231
2.223
2.223
0.2001
0.19976
0.2002
0.1993
2.231
13
2.223
2.221
NOTE:
1. Au (LET = 86MeV•cm2/mg) was used to 5x106 ion/cm2 at a flux of 2.5x104 ion/(cm2s) for each irradiation with TCASE = +125°C
for each run.
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Test Report 002
TABLE 2. SUMMARY OF THE SET TESTING DONE ON THE ISL70219ASEH
RUN
DUT
SPECIES
AND ANGLE
EFFECTIVE LET
MeV*cm2/mg
1
401
2
3
Pr15°
60.0
3
Pr15°
60.0
3
Kr0°
28.0
3
Kr0°
28.0
3
Ar0°
8.5
3
Ar0°
8.5
3
Ne0°
8.5
3
±18
0
±2.25
10
1
2
0
1
4
102
±2.25
10
1
2
0
1
4
101
±18
10
1
2
0
1
4
202
±2.25
10
1
2
0
1
4
201
±18
10
1
2
0
1
4
302
±2.25
10
1
2
0
1
4
301
VS
(V)
10
1
2
VIN
(V)
1
4
402
GAIN
SETTING
1
Ne0°
8.5
0
10
4
±18
±20mV A+B
CAPTURES
Events/ Fluence
(cm2)
3199
8.0E-04
3536
8.8E-04
834
2.1E-04
1284
3.2E-04
3700
9.3E-04
4461
1.1E-03
1020
2.6E-04
1510
3.8E-04
2703
6.8E-04
3113
7.8E-04
1084
2.7E-04
2414
6.0E-04
2986
7.5E-04
3593
9.0E-04
1136
2.8E-04
2341
5.9E-04
1758
4.4E-04
2625
6.6E-04
1042
2.6E-04
2139
5.3E-04
1820
7.5E-04
1953
9.0E-04
1351
2.8E-04
2576
5.9E-04
241
6.0E-05
954
2.4E-04
440
1.1E-04
704
1.8E-04
203
5.1E-05
780
2.0E-04
371
9.3E-05
620
1.6E-04
NOTE:
2. Each irradiation was done to a fluence of 4x106 ion/cm2 at a flux of 2x104 ion/(cm2s). Irradiation was done in the sequence from
high LET to lowest and the same four devices were used throughout the testing. Testing was done with units at ambient temperature,
about +25°C.
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Test Report 002
Figure 3 shows a plot of the SET duration outside of the ±100mV
limits versus the extreme deviation during that SET. This provides
a quick way of categorizing the SET by magnitude and duration.
All captured SET in Figure 3 had durations of less than 10µs
outside of the ±100mV window centered on the nominal
amplifier output. The deviations are constrained by the output
saturation to the supply rails of ±2.25V, approximately ±1.25V.
The SET’s group into distinct types as shown in the plot. The
longest appear in the upper center of Figure 3 and have extreme
deviations in the -200mV range and durations of approximately
7µs outside the ±100mV window. This particular SET type of SET
(19 out of 1875 in 4x106 ions/cm2) is plotted as a composite
SET plot in Figure 4. Although the time outside the ±100mV
window was approximately 7µs, the composite plot indicates the
total SET durations were actually out to about 10µs before the
nominal output was restored.
Figure 5 is a composite plot of the 30 next largest durations SET
captured for the test represented in Figure 3. These appear at the
upper left of Figure 3 and all represent negative extreme
deviations. The deviations of these events go essentially
rail-to-rail and the total durations of these events are all under
7µs total.
0.3
8
C3 = VOUT -B ±0.1V
7
0.2
SET DEVIATION (V)
SET DURATION (µs)
6
5
C3 = VOUT -B ±0.1V
4
3
0.1
0
-0.1
2
-0.2
1
0
-1
-0.5
0
0.5
-10
1
0
10
20
30
40
TIME (µs)
SET EXTREME DEVIATION (V)
FIGURE 4. COMPOSITE SET PLOTS FOR THE 19 SET IN UPPER
CENTER OF Figure 3 OF DUT1/SCOPE1 CHANNEL B
RUN 401 (G = 1, VS = ±2.25, LET = 60)
FIGURE 3. DUT1/SCOPE1 CHANNEL B RUN 401 (G = 1,
VS = ±2.25V, LET = 60) SET OF LARGER THAN ±100mV
(1875 IN 4x106 IONS/cm2) PLOTTED BY EXTREME
DEVIATION ON THE ABSCISSA AND BY TOTAL DURATION
OUTSIDE OF ±100mV ON THE ORDINATE
1.5
C3 = VOUT -B ±0.1V
SET DEVIATION (V)
1.0
0.5
0
-0.5
-1.0
-1.5
-10
-5.0
0
5.0
10
15
20
TIME (µs)
FIGURE 5. THE 30 LONGEST SET FOR DUT1/SCOPE1 CHANNEL B RUN 401 (G = 1, VS = ±2.25, LET = 60) AFTER THOSE REPRESENTED IN
Figure 4
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Test Report 002
The next interesting grouping is the positive deviations in the
middle right of Figure 3. The 30 longest SET of this grouping are
plotted in Figure 6. Again the total deviation from the composite
plot of Figure 5 is always less than for approximately 7µs.
When the supply rails are taken to ±18V, the SET are no longer
constrained in deviation and exhibit a somewhat different
pattern on the deviation versus duration plot as in Figure 7. The
central grouping at about 6µs is no longer the longest SET type. A
composite of the 30 longest SET events is shown in Figure 8. All
of these events begin with a step discontinuity that may be either
positive or negative, but then all the SET take on a positive
deviation for the bulk of the duration. A single event persists for
15µs while the other 29 events are over within 12µs.
1.5
16
C3 = VOUT -B ±0.1V
14
1.0
SET DURATION (µs)
SET DEVIATION (V)
12
0.5
0
-0.5
C3 = VOUT -B ±0.1V
10
8
6
4
-1.0
2
0
-1.5
-10
-5.0
0.0
5.0
10
15
20
-8
-6
-4
-2
0
2
SET EXTREME DEVIATION (V)
TIME (µs)
FIGURE 7. DUT1/SCOPE1 CHANNEL B RUN 402 (G = 1, LET = 60,
VS = ±18V) SET OF LARGER THAN ±100mV (2140 IN
4x106 IONS/cm2) PLOTTED BY EXTREME DEVIATION ON
THE ABSCISSA AND BY TOTAL DURATION OUTSIDE OF
±100mV ON THE ORDINATE
FIGURE 6. THE 30 LONGEST LARGE POSITIVE EXTREME DEVIATION
SET (UPPER RIGHT OF Figure 2) FOR DUT1/SCOPE1
CHANNEL B RUN 401, (G = 1, VS =±2.25, LET = 60)
6
C3 = VOUT -B ±0.1V
2.5
SET DURATION (µs)
SET DEVIATION (V)
4
2
0
-2
C3 = VOUT -B ±0.1V
2.0
1.5
1.0
0.5
-4
-6
0
-10
-5.0
0.0
5.0
10
15
20
TIME (µs)
FIGURE 8. COMPOSITE TRACE PLOT OF THE 30 LONGEST
DURATION EVENTS OUTSIDE OF ±100mV FOR
DUT1/SCOPE1 RUN 402 (G = 1, VS = ±18V, LET = 60)
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-3
-2
-1
SET EXTREME DEVIATION (V)
0
FIGURE 9. DUT1/SCOPE1 CHANNEL B RUN 202 (G = 1, LET = 8.5,
VS = ±18V) PLOT OF SET OUTSIDE OF ±100mV
DEVIATION
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October 24, 2014
Test Report 002
Dropping the LET results in smaller and shorter SET as is
indicated in Figure 9 where the SET are resulting from LET = 8.5
Ar ions. The 30 longest SET of those in Figure 9 are plotted in
Figure 10. These all start with a negative spike and then rebound
for a positive triangle, and all of over within 3µs.
Dropping to LET = 2.7 (Ne) further reduces the SET in both
deviation and duration as depicted in Figure 11. These SET are
little more than spikes and are shown in Figure 12.
Figure 7. Again the SET durations beyond ±100mV are below
10µs while the deviations can go past -6V. The 30 longest SET
are depicted in Figure 14 and again exhibit an initial negative
step with less than a µs duration followed by a positive deviation
that can extend to almost 10µs. These SET are similar to those in
Figure 8, which differ only in the gain configuration.
Changing the amplifier gain from 1 to 10 has minor impact on
the SET forms as can be seen in Figure 13 as compared to
2
C3 = VOUT -B ±0.1V
C3 = VOUT -B ±0.1V
0.8
SET DURATION (µs)
SET DEVIATION (V)
1
0
-1
-2
0.6
0.4
0.2
-3
-4
-5.0
0
0.0
5.0
-1.5
10
FIGURE 10. 30 LONGEST EVENTS RECORDED FOR DUT1/SCOPE1
RUN 202 (LET = 8.5, VS = ±18V)
-0.5
0
FIGURE 11. DUT1/SCOPE1 CHANNEL B RUN 102 (G = 1, VS = ±18V,
LET = 2.7) EVENTS BEYOND ±100mV (37 in 4x106
IONS/cm2)
10
1.0
C3 = VOUT -B ±0.1V
C2 = VOUT -A ±0.1V
0.5
8
SET DURATION (µs)
SET DEVIATION (V)
-1.0
SET EXTREME DEVIATION (V)
TIME (µs)
0
-0.5
-1.0
6
4
2
-1.5
-2.0
-5.0
0
0.0
5.0
10
TIME (µs)
FIGURE 12. COMPOSITE OF THE 37 SET OUTSIDE ±100mV FROM
DUT1/SCOPE1 RUN 102 (G = 1, VS = ±18V, LET = 2.7)
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7
-6
-4
-2
0
SET EXTREME DEVIATION (V)
2
FIGURE 13. DUT3/SCOPE3 CHANNEL A RUN 402 (G = 10, LET = 60,
VS = ±18V) FOR SET BEYOND THE ±100mV THRESHOLD
(478 IN 4x106 IONS/cm2)
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Test Report 002
6
C2 = VOUT -A ±0.1V
SET DEVIATION (V)
4
2
0
-2
-4
-6
-5.0
0.0
5.0
10
TIME (µs)
FIGURE 14. The 30 LONGEST SET TO ±100mv FOR DUT3/SCOPE3 CHANNEL A RUN 402 (G = 10, VS = ±18, LET = 60)
Conclusions
The ISL70219ASEH dual operational amplifier has been shown
to be free of permanent damage under irradiation by ions with
LET of 86 MeV•mc2/mg (normal incidence) up to supply
voltages of ±18V at +125ºC case temperature. Permanent
damage was observed at supply voltages of ±18.5V.
SET testing at +25°C demonstrated that SET resulting from ions
of up to effective LET = 60 are limited to 15µs in duration. The
deviation for these SET, range from -8V to +4V from a nominal 0V
output at supply rails of ±18V. These magnitudes as well as the
durations, decrease with decreasing LET. At LET = 2.7 SET are
bounded between -2V and +1V and have durations of less than
2µs. The ±100mV SET cross section per device at LET = 2.7 has a
lower bound of approximately 3x10-5 cm2.
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
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