an1944

Application Note 1944
Single Event Effects Testing of the ISL70419SEH
Introduction
Key SEE Test Results
The intense heavy ion environment encountered in space
applications can cause a variety of transient and destructive
effects in analog circuits, including single-event latch-up (SEL),
single-event transients (SET) and single-event burnout (SEB).
These effects can lead to system-level failures including
disruption and permanent damage. For predictable and
reliable system operation, these components have to be
formally designed and fabricated for SEE hardness, followed
by detailed SEE testing to validate the design. This report
discusses the results of SEE testing of Intersil’s ISL70419SEH.
• SOI process results in single event latch-up immunity
Related Documents
• No SEB up to 36V supply, LET = 86.4MeV•cm2/mg
• Ultra fast recovery time from SET: < 10µs
SEE Test Objective
The objective of SEE testing of the ISL70419SEH were to
evaluate its susceptibility to destructive events induced by
single event effects, such as single event burnout and to
determine its SET behavior.
SEE Test Facility
• ISL70419SEH Data Sheet
Product Description
The ISL70419SEH contains four very high precision amplifiers
featuring the perfect combination of low noise vs power
consumption. These devices are fabricated in a 40V advanced
bonded wafer SOI process using deep trench isolation,
resulting in a fully isolated structure. This choice of process
technology results in latch-up free performance, whether by
electrical or single event caused. These devices were also
designed for enhance single event transient response resulting in
fast SET recovery.
A super-beta NPN input stage with input bias current
cancellation provides low input bias current, low input offset
voltage, low input noise voltage, and low 1/f noise corner
frequency. These amplifiers also feature high open loop gain
for excellent CMRR and THD+N performance. A
complementary bipolar output stage enables high capacitive
load drive without external compensation.
These amplifier are designed to operate over a wide supply
range of 4.5V to 36V. Applications for these amplifiers include
precision active filters, low noise front ends, loop filters, data
acquisition and charge amplifiers.
The combination of high precision, low noise, low power and
radiation tolerance provide the user with outstanding value and
flexibility relative to similar competitive parts.
The part is packaged in a 14 lead hermetic ceramic flat pack
and operates over the extended temperature range of -55°C to
+125°C. A summary of key full temperature range and
radiation specifications follow:
Testing was performed at the Texas A&M University (TAMU)
Cyclotron Institute heavy ion facility. This facility is coupled to a
K500 super-conducting cyclotron, which is capable of
generating a wide range of test particles with the various
energy, flux and fluence levels needed for advanced radiation
testing.
SEE Test Procedure
The part was tested for single event burnout, using Au ions at
0°C incidence (LET = 86.4MeV•cm2/mg) with a case
temperature of +125°C, and single event transient
characterized using Ar, Kr, Ag and Pr ions with a case
temperature of +25°C.
The device under test (DUT) was mounted in the beam line and
irradiated with heavy ions of the appropriate species. The parts
were assembled in 14 lead dual in-line packages with the
metal lid removed for beam exposure. The beam was directed
onto the exposed die and the beam flux, beam fluence and
errors in the device outputs were measured.
The tests were controlled remotely from the control room. All
input power was supplied from portable power supplies
connected via cable to the DUT. The supply currents were
monitored along with the device outputs. All currents were
measured with digital ammeters, while all the output
waveforms were monitored on a digital oscilloscope for ease
of identifying the different types of SEE, displayed by the part.
Events were captured by triggering on changes in the output.
• Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . 110µV, max.
• Offset Voltage Drift . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, max.
• Input Offset Current . . . . . . . . . . . . . . . . . . . . . . . . 10nA, max.
• Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . 15nA, max.
• Supply Current/Amplifier . . . . . . . . . . . . . . . . . . 0.75mA, max.
• Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . 1.5MHz, typ.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
Application Note 1944
Cross Section Calculation
Cross sections (CS) are calculated as shown by Equation 1:
CS (LET) = N/F
(EQ. 1)
where:
• CS is the SET cross section (cm2), expressed as a function of
the heavy ion LET
• LET is the linear energy transfer in MeV·cm2/mg, corrected
according to the incident angle, if any
• N is the total number of SET events
• F is fluence in particles/cm2
A value of 1/F is the assumed cross section when no event is
observed.
Single Event Burnout Results
The first testing sequence looked at destructive effects due to
burnout. A burnout condition is indicated by a permanent change
in the device supply current after application of the beam. If the
increased current can be reset by cycling power, it is termed a
latch-up. No burnout was observed using Au ions at 0° up a
supply voltage of ±18V. Testing was performed on four parts at
TC = +125°C. All parts commenced testing with VS = ±18V and
on subsequent tests VS voltage was increased by 2V until failure.
All test runs were run to a fluence of 2.5x106/cm2. A power
supply applied a DC voltage of 200mV to the non-inverting inputs
of the amplifiers during the test. Functionality of all outputs were
verified after exposure. IDD and IEE were recorded pre and post
exposure and summed up. A 5% change in total supply current
indicates permanent damage to the op amp. Test results
demonstrated that all parts passed with VS = ±18V however,
failed when the supply voltage was increased to VS = ±19V. Test
data for VS = ±18V and VS = ±19V is shown in Tables 1 and 2,
respectively.
Single Event Transient Results
Test Setup
A a simplified schematic of the configuration of each op amp on
board used during testing is shown in Figure 1.
RF
+
RIN-
IN-
-
10k
RIN+
IN+
+
10k
ISL70419SEH (1/4)
100k
VP
V+
V-
0
VOUT
VM
Each operational amplifier was set up in a non-inverting
operation with G = 10V/V. The IN- inputs were grounded and the
input signal was applied to the IN+ pin. The reference input was
also grounded. All the outputs were fed into a summer op amp
which was out of the beam line. The output of the summer amp
was used to trigger the scope, while channels 1 through 4 of the
scope capture changes on the output of op amp A, B, C, and D of
each device. The complete board schematic and silk screen of
the board are included in Appendix A.
Biasing used for SET test runs was VS = ±5V and ± 15V. Similar to
SEL/B testing, a DC voltage of 200mV was applied to the
non-inverting inputs of the amplifiers. Signals from the switch
board in the control room were connected to four LECROY
oscilloscopes to capture SETs on devices 5, 6, 7 and 8. Summary
of the scope settings are as follows:
TRIGGER CONNECTIONS
•
•
•
•
Scope 1 is set to capture Device 5
Scope 2 is set to capture Device 6
Scope 3 is set to capture Device 7
Scope 4 is set to capture Device 8
CHANNEL CONNECTION ON ALL SCOPES FOR VS = ±5V
• CH1 = OUTA 1V/div, CH2 = OUTB 1V/div
• CH3 = OUTC 1V/div, CH4 = OUTD 1V/div
• External trigger connected to output of summer amplifier
CHANNEL CONNECTION ON ALL SCOPES FOR
VS = ±15V
• CH1 = OUTA 2V/div, CH2 = OUTB 2V/div
• CH3 = OUTC 2V/div, CH4 = OUTD 2V/div
• External trigger connected to output of summer amplifier
Events are recorded when movement on output during beam
exposure exceeds the definition of a SET. For the ISL70419SEH a
SET is a transient that exceeds the set window trigger of ±200mV
for VS = ±5V and for VS = ±15V.
Cross Section Results
One approach to characterize the SET response of an integrated
circuit is to represent the data on a LET threshold plot. Figure 2
shows the overall cross section of the four devices tested versus
the LET level, for VS = ±5V and ±15V. It can be noted that the
cross section is independent of the supply voltage. Data from
Figure 2 is represented in Table 3. Figures 3 and 4 show the LET
threshold plot of each device independently for VS = ±5V and
±15V. The graphs also show that there is no part-to-part
sensitivity as the graphs lie almost directly on top of each other.
Complete data for Figures 3 and 4 are available in Appendix A.
RREF+
100k
VREF
FIGURE 1. ISL70419SEH SEE TEST SCHEMATIC
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Application Note 1944
TABLE 1. ISL70419SEH DETAILS OF SEB/L TESTS AT VS = LET = 86.4MeV · cm2/mg
TEMP
(°C)
LET
(MeV . cm2/mg)
+125
86.4
+125
86.4
+125
86.4
+125
86.4
SUPPLY
VOLTAGE
(V)
±18
SUPPLY
CURRENT
PREEXPOSURE
(mA)
SUPPLY
CURRENT
POSTEXPOSURE
(mA)
DESTRUCTIVE
EVENTS
CUMULATIVE
FLUENCE
(PARTICLES/cm2)
CUMULATIVE
CROSS
SECTION
(cm2)
DEVICE
ID
SEB
0
2.5 x 106
5.0 x 10-7
1
PASS
0
2.5 x 106
5.0 x 10-7
2
PASS
0
2.5 x 106
5.0 x 10-7
3
PASS
5.340
0
2.5 x 106
5.0 x 10-7
4
PASS
TOTAL EVENTS
0
4.901
±18
4.949
4.701
±18
4.842
5.263
±18
5.280
5.335
OVERALL FLUENCE
1.0 x 107
OVERALL CS
1.25 x 10-7
TOTAL UNITS
4
TABLE 2. ISL70419SEH DETAILS OF SEB/L TESTS AT LET = 86.4MeV · cm2/mg
SUPPLY
CURRENT
PREEXPOSURE
(mA)
SUPPLY
CURRENT
POSTEXPOSURE
(mA)
DESTRUCTIVE
EVENTS
CUMULATIVE
FLUENCE
(PARTICLES/cm2)
CUMULATIVE
CROSS
SECTION
(cm2)
DEVICE
ID
SEB
TEMP
(°C)
LET
(MeV . cm2/mg)
SUPPLY
VOLTAGE
(V)
+125
86.4
±19
4.980
18.780
1
2.5 x 106
5.0 x 10-7
1
FAIL
+125
86.4
±19
4.877
18.146
1
2.5 x 106
5.0 x 10-7
2
FAIL
+125
86.4
±19
5.318
19.550
1
2.5 x 106
5.0 x 10-7
3
FAIL
+125
86.4
±19
5.377
19.900
1
2.5 x 106
5.0 x 10-7
4
FAIL
TABLE 3. DETAILS OF THE LET THRESHOLD PLOT OF THE ISL70419SEH
SUPPLY
VOLTAGE (V)
ION
ANGLE
EFFECTIVE LET
(MeV . cm2/mg)
FLUENCE PER RUN
(PARTICLES/cm2)
NUMBER OF
DEVICES TESTED
TOTAL SET
EVENT CS (cm2)
±5
Ar
0
8.5
2.0 x 106
4
690
8.63 x 10-5
±5
Kr
0
28
2.0 x 106
4
8566
1.07 x 10-3
4
9025
1.13 x 10-3
±5
Ag
0
43
2.0 x 106
±5
Pr
0
59.2
2.0 x 106
4
9588
1.2 x 10-3
±15
Ar
0
8.5
2.0 x 106
4
695
8.69 x 10-5
±15
Kr
0
28
2.0 x 106
4
8103
1.01 x 10-3
4
9344
1.17 x 10-3
4
9735
1.22 x 10-3
±15
Ag
0
43
2.0 x 106
±15
Pr
0
59.2
2.0 x 106
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Application Note 1944
CROSS SECTION (cm2)
1.00E-02
1.00E-03
VS = ±5V
VS = ±15V
1.00E-04
1.00E-05
0
10
20
30
40
50
60
70
LET (MeV•cm2/mg)
FIGURE 2. SET CROSS SECTION vs LINEAR ENERGY TRANSFER vs SUPPLY VOLTAGE
1.00E-02
1.00E-02
8
CROSS SECTION (cm2)
CROSS SECTION (cm2)
6
1.00E-03
8
5
1.00E-04
7
1.00E-05
0
10
20
30
40
50
60
LET (MeV•cm2/mg)
FIGURE 3. SET CROSS SECTION vs LET WITH VS = ±5V FOR
DEVICES 5, 6, 7 and 8
1.00E-03
6
5
1.00E-04
7
1.00E-05
0
10
20
30
40
50
60
LET (MeV•cm2/mg)
FIGURE 4. SET CROSS SECTION vs LET WITH VS = ±15V FOR
DEVICES 5, 6, 7 and 8
Single Event Transient Response
The ISL70419SEH was designed for single event transient (SET)
mitigation with a goal of recovering from an SET in 10µs or less.
Figures 5 through 16 plot the SET duration outside the ±200mV
window versus the extreme deviation for the various devices
tested and channels. This data is representative of the typical
response of the ISL70419SEH and provides a quick way of
categorizing the SET by magnitude and duration. All captured
SET had durations of equal or less than 10µs outside of the
±200mV window about the nominal amplifier output of 2V.
There are both positive and negative deviation on most of the
captures, while the rest of the transients were either only positive
or negative. Figures 17 through 28 are the composite plots of the
scatter plots shown in Figures 5 through 16.
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Application Note 1944
Single Event Transient Recovery Time vs Peak Deviation, VS = ±5V
FIGURE 5. DEVICE 5, CHANNEL A, RUN 101, VS = ±5V,
LET = 8.5MeV · cm2/mg
FIGURE 6. DEVICE 6, CHANNEL B, RUN 201, VS = ±5V,
LET = 28MeV · cm2/mg
FIGURE 7. DEVICE 7, CHANNEL C, RUN 301, VS = ±5V,
LET = 43MeV · cm2/mg
FIGURE 8. DEVICE 8, CHANNEL D, RUN 307, VS = ±5V,
LET = 59.2MeV · cm2/mg
FIGURE 9. DEVICE 7, CHANNEL A, RUN 307, VS = ±5V,
LET = 59.2MeV · cm2/mg
FIGURE 10. DEVICE 6, CHANNEL B, RUN 306, VS = ±5V,
LET = 59.2MeV · cm2/mg
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Application Note 1944
Single Event Transient Recovery Time vs Peak Deviation, VS = ±15V
FIGURE 11. DEVICE 5, CHANNEL A, RUN 102, VS = ±15V,
LET = 8.5MeV · cm2/mg
FIGURE 12. DEVICE 6, CHANNEL B, RUN 202, VS = ±15V,
LET = 28MeV · cm2/mg
FIGURE 13. DEVICE 7, CHANNEL C, RUN 304, VS = ±15V,
LET = 43MeV · cm2/mg
FIGURE 14. DEVICE 8, CHANNEL D, RUN 308, VS = ±15V,
LET = 59.2MeV · cm2/mg
FIGURE 15. DEVICE 7, CHANNEL A, RUN 308, VS = ±15V,
LET = 59.2MeV · cm2/mg
FIGURE 16. DEVICE 8, CHANNEL B, RUN 308, VS = ±15V,
LET = 59.2MeV · cm2/mg
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Application Note 1944
Single Event Transient Composite Plots, VS = ±5V
FIGURE 17. DEVICE 5, CHANNEL A, RUN 101, VS = ±5V,
LET = 8.5MeV · cm2/mg
FIGURE 18. DEVICE 6, CHANNEL B, RUN 201, VS = ±5V,
LET = 28MeV · cm2/mg
FIGURE 19. DEVICE 7, CHANNEL C, RUN 301, VS = ±5V,
LET = 43MeV · cm2/mg
FIGURE 20. DEVICE 8, CHANNEL D, RUN 307, VS = ±5V,
LET = 59.2MeV · cm2/mg
FIGURE 21. DEVICE 7, CHANNEL A, RUN 307, VS = ±5V,
LET = 59.2MeV · cm2/mg
FIGURE 22. DEVICE 6, CHANNEL B, RUN 306, VS = ±5V,
LET = 59.2MeV · cm2/mg
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Application Note 1944
Single Event Transient Recovery Composite Plots, VS = ±15V
FIGURE 23. DEVICE 5, CHANNEL A, RUN 102, VS = ±15V,
LET = 8.5MeV · cm2/mg
FIGURE 24. DEVICE 6, CHANNEL B, RUN 202, VS = ±15V,
LET = 28MeV · cm2/mg
FIGURE 25. DEVICE 7, CHANNEL C, RUN 304, VS = ±15V,
LET = 43MeV · cm2/mg
FIGURE 26. DEVICE 8, CHANNEL D, RUN 308, VS = ±15V,
LET = 59.2MeV · cm2/mg
FIGURE 27. DEVICE 7, CHANNEL A, RUN 308, VS = ±15V,
LET = 59.2MeV · cm2/mg
FIGURE 28. DEVICE 8, CHANNEL B, RUN 308, VS = ±15V,
LET = 59.2MeV · cm2/mg
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Application Note 1944
There is correlation to the duration of the SET with respect to the
linear energy transfer. Lower LET values e.g. 8.5MeV · cm2/mg
had the quicker response times returning the SET window of
±200mV. As the LET increases so does the recovery time until it
saturates at LET = 43MeV · cm2/mg. The same correlation is
found on the extreme voltage deviation versus LET. Reviewing
Figures 5 through 16 shows that lower LET have a smaller
deviation than the SETs caused by higher LET values.
Another interesting note is the correlation of channel-to-channel
common SET occurrences at higher LET values. For example on
run 305, which is tested with LET = 59.2MeV · cm2/mg, roughly
75% of the SET were common on all channels. For run 101,
which is tested with LET = 8.5MeV · cm2/mg, 0% of the SET were
common to all four channels. This correlation start to occur when
the LET = 28MeV · cm2/mg. An explanation of the commonality
is that a device or circuit which is common to all amplifiers is
being upset. For example the ESD clamps which are common to
all four amplifiers within the IC, could be susceptible at hIgher
LET and causing SETs on the output of all four channels.
Figures 29 and 30 are SETs of Channel 1 (OUT A) and Channel 2
(OUT B) of device 5 in run 201.These events occurred
simultaneously on all four channels.
Summary
Single Event Burnout
No single event burnout (SEB) was observed for the device up to
an LET of 86.4MeV · cm2/mg (+125°C) at a maximum voltage
supply of VS = ± 18V. This gives 20% margin on the
recommended supply voltage of VS = ± 15V. Since the
operational amplifier has no internal ground reference, the 36V
supply range can be partitioned as desired, for example have a
single supply where the V+ pin can be tied to 36V and the V- pin
tied to ground (0V).
It is also not surprising that since the process is an SOI process,
there was no latch-up observed on the device.
Single Event Transient
Based on the results presented, the ISL70419SEH op amp offers
advantages over the competitors part by having better SET
performance yet keeping the high accuracy of a precision op
amp. The length of worst case SETs can be 6µs for devices with
VS = ±5V and 10µs for devices with VS = ±15V. This part does not
experience the long recovery time (>100µs) during a single event
transient seen on other competitor op amps in a comparator
application. This may be explained by the higher drive capability
of the ISL70419SEH and its ability to drive highly capacitive
loads. Magnitude of the deviation for VS = ±5V was to 1V below
the rail in the positive direction and 1V above the rail in the
negative direction, limited by the VOH and VOL specifications of
the amplifier. For amplifiers supplied with a VS = ±15V, the
transient excursions were much larger, however they do not
extend to the expected VOH or VOL levels of ±13.5V. All the
transients observed were 8.5V deviations or less with all the
larger transient occurring in the negative direction. Recovery
time of the transients were less than or equal to 10µs.
Overall, the ISL70419SEH is very well behaved in a heavy ion
environment. In space flight applications, the ISL70419SEH
should not require filtering or other types of SET mitigation
techniques. The ISL70419SEH offers a competitive advantage
over other rad hard op amps by offering the following:
FIGURE 29. CHANNEL 1 COMPOSITE PLOT OF COMMON SETs
• No single event burnout up to ±36V
• SOI process for latch-up immunity
• Fast recovery from single event transients
FIGURE 30. CHANNEL 2 COMPOSITE PLOT OF COMMON SETs
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Application Note 1944
Appendix A
Appendix A includes the data from Figures 3 and 4 in tabular format, complete test schematic, and board silk screen images.
TABLE 4. DATA OF CHANNEL CROSS SECTION OF THE ISL70419SEH REPRESENTED IN FIGURE 3
SUPPLY VOLTAGE
(V)
LET (MeV . cm2/mg)
DEVICE
RUN NUMBER
FLUENCE PER RUN
(PARTICLES/cm2)
EVENTS
EVENT CS (cm2)
±5
8.5
5
101
2.0 x 106
171
8.55 x 10-5
±5
28
5
201
2.0 x 106
1988
9.94 x 10-4
±5
43
5
301
2.0 x 106
2155
1.08 x 10-3
±5
59.2
5
306
2.0 x 106
2511
1.26 x 10-3
±5
8.5
6
101
2.0 x 106
184
9.20 x 10-5
±5
28
6
201
2.0 x 106
2173
1.09 x 10-3
±5
43
6
301
2.0 x 106
2373
1.19 x 10-3
±5
59.2
6
306
2.0 x 106
2268
1.13 x 10-3
±5
8.5
7
103
2.0 x 106
158
7.90 x 10-5
±5
28
7
203
2.0 x 106
2074
1.04 x 10-3
±5
43
7
303
2.0 x 106
2172
1.09 x 10-3
±5
59.2
7
307
2.0 x 106
2472
1.24 x 10-3
±5
8.5
8
103
2.0 x 106
177
8.85 x 10-5
±5
28
8
203
2.0 x 106
2331
1.17 x 10-3
±5
43
8
303
2.0 x 106
2325
1.16 x 10-3
±5
59.2
8
307
2.0 x 106
2337
1.17 x 10-3
TABLE 5. DATA OF CHANNEL CROSS SECTION OF THE ISL70419SEH REPRESENTED IN FIGURE 4
SUPPLY VOLTAGE
(V)
LET (MeV · cm2/mg)
DEVICE
RUN NUMBER
FLUENCE PER RUN
(PARTICLES/cm2)
EVENTS
EVENT CS (cm2)
± 15
8.5
5
102
2.0 x 106
149
7.45 x 10-5
± 15
28
5
202
2.0 x 106
1942
9.71 x 10-4
± 15
43
5
302
2.0 x 106
2273
1.14 x 10-3
± 15
59.2
5
305
2.0 x 106
2703
1.35 x 10-3
± 15
8.5
6
102
2.0 x 106
170
8.50 x 10-5
± 15
28
6
202
2.0 x 106
2082
1.04 x 10-3
± 15
43
6
302
2.0 x 106
2362
1.18 x 10-3
± 15
59.2
6
305
2.0 x 106
2561
1.28 x 10-3
± 15
8.5
7
104
2.0 x 106
178
8.90 x 10-5
± 15
28
7
204
2.0 x 106
1990
9.95 x 10-4
± 15
43
7
304
2.0 x 106
2331
1.17 x 10-3
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Application Note 1944
TABLE 5. DATA OF CHANNEL CROSS SECTION OF THE ISL70419SEH REPRESENTED IN FIGURE 4 (CONTINUED)
SUPPLY VOLTAGE
(V)
LET (MeV · cm2/mg)
DEVICE
RUN NUMBER
FLUENCE PER RUN
(PARTICLES/cm2)
EVENTS
EVENT CS (cm2)
± 15
59.2
7
308
2.0 x 106
2301
1.15 x 10-3
± 15
8.5
8
104
2.0 x 106
198
9.90 x 10-5
± 15
28
8
204
2.0 x 106
2089
1.04 x 10-3
± 15
43
8
304
2.0 x 106
2378
1.19 x 10-3
± 15
59.2
8
308
2.0 x 106
2170
1.09 x 10-3
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V1-
VREF1
GND
J7
J6
V1+
J9
VREF2
J11
V-
J14
V+
REF1
0
IN2+
OPEN
VP
OPEN
IN1+
C11
OUTB
10K
100K
+IN_C
-IN_C
VOUT_B
V+
V-
DNP
DNP
R53
C39
C33
10K
OUTD2
AMPA
6
3
4
R70
OUTA2
C25
0.1UF
OUTB2
VP2
OUTC2
0.01UF CLOSE TO PART
OUTD2
TP2
R57
R48
10K
10K
C46
1UF
0.1UF
1
C28
VM2
CLOSE TO PART
DNP
R62
C29
D4
C45
2
5
0.01UF
0
J18
R49
0
V4+
GND
TP5
TP6
7
R37
0
1
C42
J12
J10
V2+
R35
1
2
0
10K
2
R50
3
10K
V+
V-
R51
10K
AMPB
6
TP7
U4
ISL28127FBZ
C44
0.01UF
D2
D2 OUT
R63
0.01UF
GND
TP1
DNP
R61
R47
100K
4
V3+
DNP
OPEN
R43
3
4
OUTC2
0
R33
0.1UF C21
2
5
C37
9
GND
J8
C9
0.1UF
C8
0.01UF
0
C36
OPEN
OPEN
C23
0
R55
VM2
IN2+
10
R46
C41
11
8
VOUT_C
100K
OPEN
IN2+
7
3
4
2
R3
R69
0
V4-
TP8
TP3
U3
ISL28127FBZ
0.1UF
AN1944.0
July 17, 2014
C7
R4
10K
-IN_C
12
ISL70417SEHVF
ISL70419SEH
DNP
DNP
R18
OUTD
10K
10K
VOUT_B
C19
1UF
10K
C2
OUTC
+IN_C
-IN_B
7
V2-
R2
0.01UF
OUTB
V-
OUTD2
13
J17
DNP
100K
-IN_D
+IN_D
1
2
0
R56
R27
10K
OUTB2
VOUT_D
-IN_A
+IN_A
+IN_B
6
R31
14
R40
OUTD
R9
10K
5
C2 OUT
R65
R42
V+
5
OUTC2
MAKE SURE THERE IS SYMMETRY WITH RESPECT TO THE GAIN SETTING COMPONENTS
R23
R1
J16
OPEN
DNP
R17
R13
VP2
IN2+
4
OPEN
C13
OPEN
C5
3
OPEN
VOUT_A
2
IN2+
C17
OUTA
OUTA2
100K
1
10K
0
R14
2
R59
C32
OPEN
U2
C12
R5
10K
C31
OPEN
C6
J5 1
4
3
5
R26
0
OPEN
D1 OUT
R45
100K
1
2
0
OPEN
R41
B2 OUT
R66
PLACE U1 AND U2 WITHIN A 1 INCH DIAMETER
OUTC
R8
2
VOUT_C
C18
DNP
J4 1
OUTC
8
OUTB2
C35
OPEN
R30
4
3
5
OPEN
9
ISL70417SEHVF
ISL70419SEH
C15
OPEN
C1 OUT
IN1+
10
VM
C43
DNP
R28
DNP
R12
OUTB
R25
7
+IN_B
-IN_B
IN
OPEN
R16
C4
4
3
0
6
11
C34
0
R7
2
OPEN
J2 1
5
5
0
IN1+
12
V-
V+
R44
13
Application Note 1944
B1 OUT
OPEN
4
IN
-IN_D
+IN_D
DNP
VP
-IN_A
+IN_A
R60
2
3
100K
DNP
IN1+
R39
OUTD
14
VOUT_D
R54
C10
VOUT_A
C40
1
1
2
10K
OPEN
C3
OUTA
100K
R24
OPEN
U1
R29
R15
R11
4
3
C30
OPEN
OPEN
C16
0
1 J15
2
5
0
OPEN
OUTA
R6
2
DNP
J3 1
DNP
12
5
A2 OUT
R64
OUTA2
MAKE SURE THERE IS SYMMETRY WITH RESPECT TO THE GAIN SETTING COMPONENTS
A1 OUT
100K
R67
R58
CLOSE TO PART
0.01UF
CLOSE TO PART
OUT
0.1UF
C24
R52
10K
C38
DNP
0
0
1
2
R68
J13
5
C26
VM
0.01UF
OPEN
IN2+
1
3
4
2
OUT
0.1UF C20
2
1
C27
1UF
D3
0.1UF
C1
1
IN1+
0
3
4
0
C14
R36
0
R38
10K
R32
R21
R19
DNP
1
2
4
3
5
R10
R22
J1
100K
2
IN1+
R34
D1
4
3
C22
1UF
R20
0
V3-
TP4
DRAWN BY:
ENGINEER:
FIGURE 31. ISL70419SEH SEE TEST BOARD SCHEMATIC
DATE:
DRAWING TITLE
07/16/2013
ISL70417SEH
SEE TEST BOARD
RH QUAD OP AMP
OSCAR MANSILLA
SIZE
C
C
FILENAME:
DRAWING NO.
ISL70417SEHENG1
REV
SHEET
Application Note 1944
CONFIDENTIAL
IN REVIEW
FIGURE 32. ISL70419SEH SEE TEST BOARD TOP VIEW
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Application Note 1944
CONFIDENTIAL
IN REVIEW
FIGURE 33. ISL70419SEH SEE TEST BOARD BOTTOM VIEW
Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is
cautioned to verify that the Application Note or Technical Brief is current before proceeding.
For information regarding Intersil Corporation and its products, see www.intersil.com
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