MMBT3904WGH

Zowie Technology Corporation
General Purpose Transistor
NPN Silicon
Lead free product
Halogen-free type
COLLECTOR
3
3
MMBT3904WGH
BASE
1
1
2
2
EMITTER
SOT-323
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Symbol
Max.
Unit
PD
225
1.8
mW
mW / oC
R JA
556
PD
300
2.4
R JA
TJ,TSTG
417
-55 to +150
Rating
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristic
o
Total Device Dissipation FR-5 Board(1) TA=25 C
o
Derate above 25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
o
Derate above 25 C
(2)
o
TA=25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C/W
mW
mW / oC
o
C/W
o
C
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Symbol
Min.
Max.
Unit
V(BR)CEO
40
-
Vdc
Collector-Base Breakdowe Voltage
( IC=10 uAdc, IE=0 )
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdowe Voltage
( IE=10 uAdc, IC=0 )
V(BR)EBO
6.0
-
Vdc
Base Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
IBL
-
50
nAdc
Collector Cutoff Current
( VCE=30 Vdc, VEB=3.0 Vdc )
ICEX
-
50
nAdc
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC=1.0mAdc, IB=0 )
2010/12
(3)
Zowie Technology Corporation
Zowie Technology Corporation
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Min.
Max.
40
70
100
60
30
300
-
VCE(sat)
-
0.2
0.3
Vdc
VBE(sat)
0.65
-
0.85
0.95
Vdc
fT
300
-
MHZ
Output Capacitance
( VCB=5.0 Vdc, IE=0, f=1.0 MHZ )
Cobo
-
4.0
pF
Input Capacitance
( VEB=0.5 Vdc, IC=0, f=1.0 MHZ )
Cibo
-
8.0
pF
Input Impedance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hie
1.0
10
k ohms
Voltage Feedback Ratio
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hre
0.5
8.0
X 10
Small-Signal Current Gain
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hfe
100
400
-
Output Admittance
( VCE=10 Vdc, IC=1.0 mAdc, f=1.0 kHZ )
hoe
1.0
40
u mhos
Noise Figure
( VCE=5.0 Vdc, IC=100 uAdc, RS=1.0 k ohm, f=1.0 kHZ )
NF
-
5.0
dB
( VCC=3.0 Vdc, VBE=-0.5 Vdc,
IC=10 mAdc, IB1=1.0 mAdc )
td
-
35
tr
-
35
( VCC=3.0 Vdc,
IC=10 mAdc, IB1=IB2=1.0 mAdc )
ts
-
200
tf
-
50
Symbol
Characteristic
ON CHARACTERISTICS
Unit
(3)
DC Current Gain
( IC=0.1 mAdc, VCE=1.0 Vdc )
( IC=1.0 mAdc, VCE=1.0 Vdc )
( IC=10 mAdc, VCE=1.0 Vdc )
( IC=50 mAdc, VCE=1.0 Vdc )
( IC=100 mAdc, VCE=1.0 Vdc )
Collector-Emitter Saturation Voltage
( IC=10 mAdc, IB=1.0 mAdc )
( IC=50 mAdc, IB=5.0 mAdc )
HFE
-
(3)
(3)
Base-Emitter Saturation Voltage
( IC=10 mAdc, IB=1.0 mAdc )
( IC=50 mAdc, IB=5.0 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC=10 mAdc, VCE=20 Vdc, f=100 MHZ )
-4
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle
2010/12
nS
nS
2.0%.
Zowie Technology Corporation
Zowie Technology Corporation
MMBT3904WGH
+3V
+3 V
DUTY CYCLE = 2%
300 ns
t1
10 < t1< 500us
+10.9 V
275
+10.9 V
DUTY CYCLE = 2%
275
10 k
10 k
0
±0.5 V
CS < 4 pF*
< 1 ns
CS < 4 pF*
1N916
- 9.1 V
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
5000
o
TJ=25 C
2000
Q, CHARGE (pC)
CAPACITANCE ( pF )
VCC=40 V
IC/IB=10
3000
7.0
5.0
Cibo
3.0
Cobo
2.0
o
TJ=125 C
1000
700
500
QT
300
200
QA
100
70
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
REVERSE BIAS VOLTAGE ( VOLTS )
Figure 3. Capacitance
2010/12
20 30 40
50
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT ( mA )
Figure 4. Charge Data
Zowie Technology Corporation
Zowie Technology Corporation
MMBT3904WGH
500
500
300
300
IC/IB=10
200
tr, RISE TIME ( ns )
200
TIME (ns)
100
70
tr @ VCC=3.0 V
50
30
20
40 V
100
70
50
30
20
15 V
10
10
7
7
2.0 V
td @ VOB=0 V
5
5
1.0
2.0 3.0
5.0 7.0 10
20
50 70 100
30
200
1.0
2.0 3.0
IC, COLLECTOR CURRENT ( mA )
Figure 5. Turn-On Time
IC/IB=20
t'S = tS - 1/8tf
IB1/IB2
70
50
IC/IB=20
IC/IB=10
30
20
IC/IB=20
100
70
50
30
10
10
7
7
IC/IB=10
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
IC, COLLECTOR CURRENT ( mA )
5.0 7.0 10
20
30
50 70 100
200
IC, COLLECTOR CURRENT ( mA )
Figure 7. Storage Time
Figure 8. Fall Time
12
14
SOURCE RESISTANCE=200
IC=1.0 mA
NF, NOISE FIGURE ( bB )
NF, NOISE FIGURE ( bB )
200
VCC=40 V
IB1=IB2
200
20
5
10
SOURCE RESISTANCE=200
IC=0.5 mA
8
SOURCE RESISTANCE=1.0 K
IC=50uA
6
4
SOURCE RESISTANCE=500
IC=100uA
12
IC =1.0 mA
f = 1.0 KHZ
IC =0.5 mA
10
IC =100 uA
IC =50 uA
8
6
4
2
0
0
0.1
0.2
0.4
1.0
2.0
4.0
10
f, FREQUENCY (kHz)
Figure 9.
2010/12
50 70 100
300
IC/IB=10
100
2
30
500
tf, FALL TIME ( ns )
t's, STORAGE TIME ( ns )
200
20
Figure 6. Rise Time
500
300
5.0 7.0 10
IC, COLLECTOR CURRENT ( mA )
20
40
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
100
RS, SOURCE RESISTANCE ( k OHMS )
Figure 10.
Zowie Technology Corporation
Zowie Technology Corporation
MMBT3904WGH
100
hoe, OUTPUTADMITTANCE (umhos)
300
hfe, CURRENT GAIN
200
100
70
50
50
20
10
5
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0
5.0
3.0
10
0.1
0.2
IC, COLLECTOR CURRENT ( mA )
hre, VOLTAGE FEEDBACK RATIO(X 10-4)
hie, INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.2
0.3
0.5
1.0
1.0
2.0
3.0
5.0
10
Figure 12. Output Admittance
20
0.2
0.5
IC, COLLECTOR CURRENT ( mA )
Figure 11. Current Gain
0.1
0.3
5.0
2.0 3.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
IC, COLLECTOR CURRENT ( mA )
IC, COLLECTOR CURRENT ( mA )
Figure 13. Input Impedance
Figure 14. Voltage Feedback Ratio
10
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
o
TJ = +125 C
VCE=1.0V
o
TJ = +25 C
1.0
0.7
o
TJ = -55 C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT ( mA )
Figure 15. DC Current Gain
2010/12
Zowie Technology Corporation
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Zowie Technology Corporation
MMBT3904WGH
1.0
o
TJ = 25 C
0.8
10 mA
IC = 1.0 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.1
0.07
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT ( mA )
1.2
1.0
1.0
0.5
COEFFICIENT ( mV / C )
VBE(sat) @ IC/IB=10
0.8
VBE @ ICE=1.0 V
0.6
0.4
VCE(sat) @ IC/IB=10
o
VC
FOR VCE(sat)
0
o
o
o
o
-55 C to +25 C
-0.5
-55 C to +25 C
-1.0
o
o
+25 C to +125 C
VB
FOR VBE(sat)
-1.5
0.2
0
-2.0
1.0
2.0
5.0
10
20
50
IC, COLLECTOR CURRENT ( mA )
Figure 17. " ON " Voltage
2010/12
o
+25 C to +125 C
o
V, VOLTAGE ( VOLTS )
Figure 16. Collector Saturation Region
100
200
0
20
40
60
80
100
120
140
160
180 200
IC, COLLECTOR CURRENT ( mA )
Figure 18. Temperature Coefficients
Zowie Technology Corporation