TSM100N06 60V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS (V) RDS(on)(mΩ) ID (A) 60 6.7 @ VGS =10V 100 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 6.7mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) ● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. Package Packing TO-220 50pcs / Tube TSM100N06CZ C0G Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V (3) TC=25°C Continuous Drain Current TC=70°C TA=25°C 100 ID TA=70°C 80 14 A 11 Drain Current-Pulsed Note 1 IDM 400 A Avalanche Current, L=0.1mH IAS 71 A Avalanche Energy, L=0.1mH EAS, EAR 400 mJ TC=25°C Maximum Power Dissipation TC=70°C TA=25°C 167 PD TA=70°C Storage Temperature Range Operating Junction Temperature Range 107 2 W 1.3 TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Limit Unit RӨJC 0.8 °C/W RӨJA 62.5 °C/W * Limited by maximum junction temperature Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Document Number: DS_P0000019 1 Version: B15 TSM100N06 60V N-Channel Power MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 60 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 30A RDS(ON) -- 5.7 6.7 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2 3 4 V Zero Gate Voltage Drain Current VDS = 48V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±20V, VDS = 0V IGSS -- -- ±100 nA Qg -- 81 -- Qgs -- 23 -- Qgd -- 24 -- Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 30V, ID = 30A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz Ciss -- 4382 -- Coss -- 668 -- Crss -- 339 -- td(on) -- 25 -- tr -- 19 -- td(off) -- 85 -- tf -- 43 -- VSD - 0.8 1.3 nC pF Switching Turn-On Delay Time Turn-On Rise Time VGS = 10V, VDS = 30V, Turn-Off Delay Time RG = 3.3Ω Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward VGS=0V, IS=20A Voltage Reverse Recovery Time o tfr IS = 30A, TJ=25 C 36 nS V nS dI/dt = 100A/us Reverse Recovery Charge Qfr 53 nC Notes: 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 2. RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RӨJC is guaranteed by design while RӨCA is determined by the user's board design. RӨJA shown below for single device operation on FR-4 in still air 3. Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 75A Document Number: DS_P0000019 2 Version: B15 TSM100N06 60V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Output Characteristics Gate Threshold Voltage Gate Source On Resistance Drain-Source On Resistance Drain-Source On-Resistance Source-Drain Diode Forward Voltage Document Number: DS_P0000019 3 Version: B15 TSM100N06 60V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25°C, unless otherwise noted) Power Derating Drain Current vs. Junction Temperature Safe Operation Area Transient Thermal Impedance Capacitance Gate Charge Document Number: DS_P0000019 4 Version: B15 TSM100N06 60V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H J K L M N O P Document Number: DS_P0000019 5 TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270 Version: B15 TSM100N06 60V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000019 6 Version: B15