TSM60N06_A12.pdf

TSM60N06
60V N-Channel Power MOSFET
TO-252
(DPAK)
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
3. Source
Features
●
●
●
●
VDS (V)
RDS(on)(mΩ)
ID (A)
60
7.3 @ VGS =10V
66
Block Diagram
Advanced Trench Technology
Low RDS(ON) 7.3mΩ (Max.)
Low gate charge typical @ 81nC (Typ.)
Low Crss typical @ 339pF (Typ.)
Ordering Information
Part No.
Package
Packing
TSM60N06CP ROG
TO-252
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
N-Channel MOSFET
Absolute Maximum Rating (TC = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
TC = 25℃
Continuous Drain Current
TC = 70℃
TA = 25℃
66
ID
TA = 70℃
Drain Current-Pulsed Note 1
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
TA = 25℃
A
IDM
150
A
IAS, IAR
53
A
400
mJ
EAS, EAR
TC = 70℃
13
10
TC = 25℃
Maximum Power Dissipation
53
44.6
PD
TA = 70℃
28.6
2
W
1.3
TSTG
-55 to +150
℃
TJ
-55 to +150
℃
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
RӨJC
2.8
℃/W
Thermal Resistance - Junction to Ambient
RӨJA
62
℃/W
Storage Temperature Range
Operating Junction Temperature Range
* Limited by maximum junction temperature
Thermal Performance
Parameter
1/4
Version: A12
TSM60N06
60V N-Channel Power MOSFET
Electrical Specifications (TC = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
60
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 30A
RDS(ON)
--
6.3
7.3
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2
3
4
V
Zero Gate Voltage Drain Current
VDS = 48V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Qg
--
81
--
Qgs
--
23
--
Qgd
--
24
--
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 30V, ID = 30A,
VGS = 10V
VDS = 30V, VGS = 0V,
f = 1.0MHz
Ciss
--
4382
--
Coss
--
668
--
Crss
--
339
--
td(on)
--
25
--
tr
--
19
--
td(off)
--
85
--
tf
--
43
--
VSD
-
0.8
1.3
nC
pF
Switching
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 30V,
Turn-Off Delay Time
RG = 3.3Ω, ID = 30A
Turn-Off Fall Time
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
VGS = 0V, IS = 20A
Voltage
Reverse Recovery Time
IS = 30A, TJ = 25 ℃
dI/dt = 100A/us
tfr
36
nS
V
nS
Reverse Recovery Charge
Qfr
53
nC
Notes:
1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/4
Version: A12
TSM60N06
60V N-Channel Power MOSFET
TO-252 Mechanical Drawing
DIM
A
B
C
D
E
F
G
G1
H
H1
J
K
L
M
3/4
TO-252 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
2.286 BSC
0.090 BSC
0.370
0.409
9.40
10.40
0.213
0.245
5.40
6.23
0.252
0.268
6.40
6.80
0.087
0.094
2.20
2.40
0.000
0.008
0.00
0.20
0.205
0.217
5.20
5.50
0.020
0.036
0.50
0.91
0.018
0.024
0.45
0.60
0.016
0.024
0.40
0.60
0.098
0.114
2.50
2.90
0.023
0.039
0.60
1.00
0.055
0.070
1.40
1.78
0.034
0.050
0.88
1.28
Version: A12
TSM60N06
60V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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4/4
Version: A12