TSM5NB50 500V N-Channel Power MOSFET TO-220 ITO-220 Parameter Value Unit VDS 500 V RDS(on) (max) 1.5 Ω Qg 14 nC TO-252 (DPAK) Application ● ● Key Parameter Performance t R NB eco 50C mm Z en de d TO-251 (IPAK) Pin Definition: 1. Gate 2. Drain 3. Source Block Diagram Power Supply. Lighting Ordering Information Package Packing TSM5NB50CZ C0G TO-220 50pcs / Tube M5 Part No. TSM5NB50CI C0G ITO-220 50pcs / Tube TSM5NB50CH C5G TO-251 75pcs / Tube TS TSM5NB50CP ROG TO-252 2.5kpcs / 13” Reel Note: “G” denotes for Halogen- and Antimony-free as those which N-Channel MOSFET No contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25oC unless otherwise noted) Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ±30 V 5 A 3 A IDM 20 A EAS 100 mJ Continuous Drain Current Pulsed Drain Current Tc = 25ºC (Note 1) Tc = 100ºC (Note 2) Single Pulse Avalanche Energy (Note 3) Total Power Dissipation @ TC = 25ºC Operating Junction Temperature Storage Temperature Range Document Number: DS_P0000115 ID PTOT 54 33 70 W TJ -55 to +150 °C TSTG -55 to +150 °C 1 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Thermal Performance Parameter Symbol Limit IPAK/DPAK ITO-220 TO-220 Unit Thermal Resistance - Junction to Case RӨJC 2.3 3.8 1.78 °C/W Thermal Resistance - Junction to Ambient RӨJA 83 62.5 62.5 °C/W Electrical Specifications (TA=25ºC unless otherwise noted) Parameter Static Conditions Symbol Min Typ Max Unit (Note 4) VGS = 0V, ID = 250µA BVDSS 500 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 2.5A RDS(ON) -- 1.3 1.5 Ω Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.5 4.5 V Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 µA VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA gfs -- 3.5 -- S Qg -- 14 -- Qgs -- 4.5 -- Qgd -- 5.5 -- Ciss -- 552 -- Coss -- 83 -- Crss -- 18 -- td(on) -- 12 -- tr -- 22 -- td(off) -- 33 -- tf -- 21 -- Gate Body Leakage t R NB eco 50C mm Z en de d Drain-Source Breakdown Voltage Forward Transfer Conductance Dynamic (Note 5) Total Gate Charge Gate-Source Charge Input Capacitance Output Capacitance VDS = 300V, ID = 5A, VGS = 10V M5 Gate-Drain Charge VDS = 10V, ID = 2.5A VDS = 25V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance (Note 6) TS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VGS = 10V, ID = 5A, No Switching VDD = 300V, RG = 25Ω Source-Drain Diode Ratings and Characteristic nC pF ns (Note 4) Source Current Integral reverse diode in IS -- -- 5 A Source Current (Pulse) the MOSFET ISM -- -- 20 A Diode Forward Voltage IS = 5A, VGS = 0V VSD -- 0.9 1.5 V Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature o 3. L = 40mH, IAS = 2.2A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. Document Number: DS_P0000115 2 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Electrical Characteristics Curves Transfer Characteristics On-Resistance vs. Drain Current Gate-Source Voltage vs. Gate Charge TS M5 t R NB eco 50C mm Z en de d Output Characteristics Source-Drain Diode Forward Current vs. Voltage No On-Resistance vs. Junction Temperature Document Number: DS_P0000115 3 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Electrical Characteristics Curves BVDSS vs. Junction Temperature t R NB eco 50C mm Z en de d Capacitance vs. Drain-Source Voltage Maximum Safe Operating Area (ITO-220) TS M5 Maximum Safe Operating Area (TO-220) No Maximum Safe Operating Area (DPAK/IPAK) Document Number: DS_P0000115 4 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Electrical Characteristics Curves Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (TO-220) 10 1 100 10-1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-2 10-3 10-4 10-6 10-5 10-4 10-3 10-2 10-1 100 Square Wave Pulse Duration (s) t R NB eco 50C mm Z en de d 100 10-1 10-3 10-4 10-6 M5 10-2 10-5 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-4 TS Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220) 101 10-3 10-2 10-1 100 Square Wave Pulse Duration (s) 10 100 No Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK) 1 10-1 Duty=0.5 Duty=0.2 Duty=0.1 Duty=0.05 Duty=0.02 Duty=0.01 Single pulse 10-2 10-3 10-4 10-6 10-5 10-4 10-3 10-2 10-1 100 Square Wave Pulse Duration (s) Document Number: DS_P0000115 5 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Unit: Millimeters TS M5 t R NB eco 50C mm Z en de d TO-220 Mechanical Drawing Marking Diagram No Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000115 6 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Unit: Millimeters TS M5 t R NB eco 50C mm Z en de d ITO-220 Mechanical Drawing Marking Diagram = Halogen Free = Year Code = Week Code (01~52) = Factory Code No G Y WW F Document Number: DS_P0000115 7 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Unit: Millimeters M5 Marking Diagram t R NB eco 50C mm Z en de d TO-252 (DPAK) Mechanical Drawing No TS Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr V =Aug S =May T =Jun U =Jul W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000115 8 Version: D15 TSM5NB50 500V N-Channel Power MOSFET Unit: Millimeters TS M5 t R NB eco 50C mm Z en de d TO-251 (IPAK) Mechanical Drawing Marking Diagram No Y = Year Code M = Month Code for Halogen Free Product O =Jan P =Feb Q =Mar R =Apr S =May T =Jun U =Jul V =Aug W =Sep X =Oct Y =Nov Z =Dec L = Lot Code Document Number: DS_P0000115 9 Version: D15 TSM5NB50 No TS M5 t R NB eco 50C mm Z en de d 500V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_P0000115 10 Version: D15