TSM4NB65 D15

TSM4NB65
650V N-Channel Power MOSFET
TO-220
ITO-220
TO-251
(IPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
Value
Unit
VDS
650
V
RDS(on) (max)
3.37
Ω
Qg
13.46
nC
TO-252
(DPAK)
Application
●
●
Block Diagram
Power Supply.
Lighting
Ordering Information
Part No.
Package
Packing
TSM4NB65CZ C0G
TO-220
50pcs / Tube
TSM4NB65CI C0G
ITO-220
50pcs / Tube
TSM4NB65CH C5G
TO-251
75pcs / Tube
TSM4NB65CP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which
N-Channel MOSFET
contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br
+ Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings (TC = 25℃ unless otherwise noted)
Parameter
Symbol
Limit
IPAK/DPAK
ITO-220
TO-220
Unit
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
4
A
2.4
A
IDM
16
A
EAS
31.2
mJ
Continuous Drain Current
Pulsed Drain Current
Tc = 25℃
(Note 1)
Tc = 100℃
(Note 2)
Single Pulse Avalanche Energy
(Note 3)
Total Power Dissipation @ TC = 25℃
Operating Junction Temperature
Storage Temperature Range
Document Number: DS_P0000112
ID
PTOT
50
25
70
W
TJ
-55 to +150
℃
TSTG
-55 to +150
℃
1
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Limit
IPAK/DPAK
ITO-220
TO-220
Unit
Thermal Resistance - Junction to Case
RӨJC
2.5
5
1.78
℃/W
Thermal Resistance - Junction to Ambient
RӨJA
83
62.5
62.5
℃/W
Electrical Specifications (TA=25℃ unless otherwise noted)
Parameter
Static
Conditions
Symbol
Min
Typ
Max
Unit
(Note 4)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
650
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 2A
RDS(ON)
--
2.7
3.37
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
2.5
3.6
4.5
V
Zero Gate Voltage Drain Current
VDS = 650V, VGS = 0V
IDSS
--
--
1
µA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Forward Transfer Conductance
VDS = 40V, ID = 2A
gfs
--
2.6
--
S
Qg
--
13.46
--
Qgs
--
2.98
--
Qgd
--
6.66
--
Ciss
--
549
--
Coss
--
75
--
Crss
--
18
--
td(on)
--
11
--
tr
--
20
--
td(off)
--
30
--
tf
--
19
--
Dynamic
(Note 5)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 4A,
VGS = 10V
Input Capacitance
Output Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Switching
nC
pF
(Note 6)
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, ID = 4A,
Turn-Off Delay Time
VDD = 300V, RG = 25Ω
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
ns
(Note 4)
Source Current
Integral reverse diode in
IS
--
--
4
A
Source Current (Pulse)
the MOSFET
ISM
--
--
16
A
Diode Forward Voltage
IS = 4A, VGS = 0V
VSD
--
--
1.13
V
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L = 10mH, IAS = 2.4A, VDD = 50V, RG = 25Ω, Starting TJ = 25℃
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000112
2
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
Document Number: DS_P0000112
Source-Drain Diode Forward Current vs. Voltage
3
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
Electrical Characteristics Curves
BVDSS vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (TO-220)
Maximum Safe Operating Area (ITO-220)
Maximum Safe Operating Area (DPAK/IPAK)
Document Number: DS_P0000112
4
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
Electrical Characteristics Curves
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (TO-220)
10
1
100
10-1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
101
100
10-1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case (DPAK/IPAK)
10
1
100
10-1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-2
10-3
10-4
10-6
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (s)
Document Number: DS_P0000112
5
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
TO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L = Lot Code
Document Number: DS_P0000112
6
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
Unit: Millimeters
Marking Diagram
G
Y
WW
F
= Halogen Free
= Year Code
= Week Code (01~52)
= Factory Code
Document Number: DS_P0000112
7
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
TO-252 (DPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
Y =Nov Z =Dec
W =Sep X =Oct
L = Lot Code
Document Number: DS_P0000112
8
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
TO-251 (IPAK) Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul
V =Aug
Y =Nov Z =Dec
W =Sep X =Oct
L = Lot Code
Document Number: DS_P0000112
9
Version: D15
TSM4NB65
650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000112
10
Version: D15