s12443 kmpd1137e

CMOS linear image sensor
S12443
Pixel size: 7 × 125 μm, 2496 pixels,
small package
The S12443 is a CMOS linear image sensor with a compact yet 2496-pixel long photosensitive area (effective photosensitive
area length: 17.472 mm). The pixel size is 7 × 125 μm.
Features
Applications
Pixel size: 7 × 125 μm
Barcode readers
2496 pixels
Position detection
Effective photosensitive area length: 17.472 mm
Image reading
3.3 V single power supply operation
Encoders
Built-in timing generator allows operation with only
start and clock pulse inputs.
Video data rate: 10 MHz max.
Small input terminal capacitance: 5 pF
Structure
Parameter
Number of pixels
Pixel pitch
Pixel height
Photosensitive area length
Package
Seal material
Specification
2496
7
125
17.472
Glass epoxy
Silicone resin
Unit
μm
μm
mm
-
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
Reflow soldering conditions*2
Symbol
Condition
Value
Unit
Vdd
Ta=25 °C
-0.3 to +6
V
V(CLK)
Ta=25 °C
-0.3 to +6
V
V(ST)
Ta=25 °C
-0.3 to +6
V
Topr
-40 to +85
°C
Tstg
-40 to +85
°C
Tsol
Peak temperature 260 °C, 3 times (see P.9)
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to the product
within the absolute maximum ratings.
*1: No dew condensation
When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: JEDEC level 2a
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1
CMOS linear image sensor
S12443
Recommended terminal voltage (Ta=25 °C)
Parameter
Symbol
Vdd
Supply voltage
Clock pulse voltage
Start pulse voltage
High level
Low level
High level
Low level
V(CLK)
V(ST)
Min.
3.15
3
0
3
0
Typ.
3.3
Vdd
Vdd
-
Max.
3.45
Vdd + 0.25
0.3
Vdd + 0.25
0.3
Unit
Typ.
5
5
Max.
-
Unit
pF
pF
Max.
10 M
260
30
Unit
Hz
Hz
Ω
mA
V
V
V
V
V
Input terminal capacitance (Ta=25 °C, Vdd=3.3 V)
Parameter
Clock pulse input terminal capacitance
Start pulse input terminal capacitance
Symbol
C(CLK)
C(ST)
Min.
-
Electrical characterisitics [Ta=25 °C, Vdd=3.3 V, V(CLK)=V(ST)=3.3 V]
Parameter
Symbol
Min.
Typ.
Clock pulse frequency
f(CLK)
200 k
5M
Video data rate
VR
f(CLK)
Output impedance
Zo
70
Current consumption*3 *4
I
14
21
*3: f(CLK)=10 MHz
*4: Current consumption increases as the clock pulse frequency increases. The current consumption is 8 mA
typ. at f(CLK)=200 kHz.
Electrical and optical characterisitics [Ta=25 °C, Vdd=3.3 V, V(CLK)=V(ST)=3.3V, f(CLK)=10 MHz]
Parameter
Symbol
Unit
Min.
Typ.
Max.
Spectral response range
λ
400 to 1000
nm
Peak sensitivity wavelength
λp
700
nm
Photosensitivity*5
R
500
V/(lx·s)
Conversion efficiency*6
CE
25
μV/eVd
0
0.4
4.0
mV
Dark output voltage*7 *8
Saturation output voltage*8
Vsat
1.5
2.0
2.8
V
Readout noise
Nr
0.4
1.2
2.0
mV rms
Dynamic range 1*9
DR1
1666
times
Dynamic range 2*10
DR2
5000
times
Output offset voltage
Vo
0.4
0.7
1.0
V
Photoresponse nonuniformity*5 *11
PRNU
±10
%
Image lag*12
IL
0.1
%
*5: Measured with a tungsten lamp of 2856 K
*6: Output voltage generated per one electron
*7: Integration time=10 ms
*8: Difference from Vo
*9: DR1 = Vsat/Nr
*10: DR2 = Vsat/Vd
Integration time=10 ms
Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range.
*11: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 2490 pixels excluding 3 pixels each at
both ends, and is defined as follows:
PRNU= ΔX/X × 100 (%)
X: average output of all pixels, ΔX: difference between X and maximum output or minimum output
*12: Signal components of the preceding line data that still remain even after the data is read out in a saturation output state.
Image lag increases when the output exceeds the saturation output voltage.
2
CMOS linear image sensor
S12443
Appearance inspection standards
Parameter
Foreign matter on photosensitive area
Test criterion
10 μm max.
Inspection method
Automated camera
Spectral response (typical example)
(Ta=25 °C)
100
Relative sensitivity (%)
80
60
40
20
0
400
500
600
700
800
900
1000
Wavelength (nm)
KMPDB0369EA
Block diagram
Shift register
Trig 12
CLK 2
ST 14
Timing
generator
9 EOS
Hold circuit
8 Video
Amp array
Bias
generator
Photodiode array
1 7
Vdd
3 6
Vss
13
Vcp
KMPDC0419EB
3
CMOS linear image sensor
S12443
Output waveforms of one pixel
The timing for acquiring the video signal is synchronized with the rising edge of Trig pulse (See red arrow below.).
f(CLK)=VR=10 MHz
CLK
5 V/div.
GND
Trig
5 V/div.
GND
2.7 V (saturation output voltage=2 V)
Video
0.7 V (output offset voltage)
1 V/div.
GND
20 ns/div.
f(CLK)=VR=1 MHz
CLK
5 V/div.
GND
Trig
GND
5 V/div.
2.7 V (saturation output voltage=2 V)
Video
1 V/div.
0.7 V (output offset voltage)
GND
200 ns/div.
4
CMOS linear image sensor
S12443
Timing chart
1 2 3 4
34 35 36
48 49 50
CLK
Integration time
tlp(ST)
ST
thp(ST)
tpi(ST)
48 clocks
2496
1
2496
Video
50
1
Trig
EOS
tr(CLK)
tf(CLK)
CLK
1/f(CLK)
ST
tr(ST)
tf(ST)
thp(ST)
tlp(ST)
tpi(ST)
KMPDC0420EB
Parameter
Symbol
Unit
Min.
Typ.
Max.
Start pulse cycle*13
tpi(ST)
70/f(CLK)
s
Start pulse high period*13 *14
thp(ST)
6/f(CLK)
s
Start pulse low period
tlp(ST)
64/f(CLK)
s
Start pulse rise and fall times
tr(ST), tf(ST)
0
10
30
ns
Clock pulse duty ratio
45
50
55
%
Clock pulse rise and fall times
tr(CLK), tf(CLK)
0
10
30
ns
*13: Dark output increases if the start pulse cycle or the start pulse high period is lengthened.
*14: The integration time equals the high period of ST plus 34 CLK cycles.
The shift register starts operation at the rising edge of CLK immediately after ST goes low.
The integration time can be changed by changing the ratio of the high and low periods of ST.
If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal is acquired at the rising edge of the 50th Trig pulse.
5
CMOS linear image sensor
S12443
Operation example
This example assumes that the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized.
Clock pulse frequency = Video data rate = 10 MHz
Start pulse cycle = 2548/f(CLK) = 2548/10 MHz = 254.8 μs
High period of start pulse = Start pulse cycle - Start pulse’s low period min.
= 2548/f(CLK) - 64/f(CLK) = 2548/10 MHz - 64/10 MHz = 248.4 μs
Integration time is equal to the high period of start pulse + 34 cycles of clock pulses, so it will be 248.4 + 3.4 = 251.8 μs.
thp(ST)=248.4 μs
tlp(ST)=6.4 μs
ST
tpi(ST)=254.8 μs
KMPDC0421EC
Dimensional outline (unit: mm)
Photosensitive area
17.472 × 0.125
22.9
2.7
8.2 ± 0.2
1 ch
2496 ch
Direction of scan
Photosensitive
surface
0.972 ± 0.2*3
[Top view]
Silicone resin
1.6 ± 0.3
1.3 ± 0.15*2
Glass epoxy
0.3 ± 0.15*1
[Side view]
20.32
2.54 2.54
5.08
1.27
[Bottom view]
Index mark
Electrode
(14 ×) ϕ0.5
Tolerance unless otherwise noted: ±0.1
*1: Distance from package surface to photosensitive surface
*2: Distance from package bottom to photosensitive surface
*3: Distance from package side surface to center of photosensitive
KMPDA0295EF
6
CMOS linear image sensor
S12443
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Symbol
Vdd
CLK
Vss
NC
NC
Vss
Vdd
Video
EOS
NC
NC
Trig
Vcp
ST
I/O
I
I
I
O
O
O
I
I
Description
Supply voltage
Clock pulse
GND
No connection
No connection
GND
Supply voltage
Video signal
End of scan
No connection
No connection
Trigger pulse
Bias voltage for booster circuit*15
Start pulse
*15: Voltage of approx. 5.5 V, which was boosted by the chip's internal booster circuit, appears at the terminal. To maintain the voltage,
insert a capacitor of about 1 μF between GND and Vcp.
Recommended land pattern (unit: mm)
20.32
15.24
10.16
2.54
(14 ×) ϕ0.7
5.08
1.27
2.54
KMPDC0495EA
Application circuit example
+3.3 V
+3.3 V
0.1 μF
0.1 μF
+
22 μF/25 V
+
+3.3 V
22 μF/25 V
0.1 μF
+
22 μF/25 V
ST
82 Ω
CLK
82 Ω
74HC541
+3.3 V
22 μF/25 V
+
1
Vdd
ST 14
2
CLK
Vcp 13
3
Vss
Trig 12
4
NC
NC 11
5
NC
NC 10
6
Vss
EOS 9
7
Vdd
Video 8
1 μF
Trig
EOS
74HC541
+5 V
0.1 μF
S12443
0.1 μF
+
22 μF/25 V
+
-
100 Ω
LT1818
51 Ω
Video
22 pF
0.1 μF
22 μF/25 V
+
-5 V
KMPDC0422EB
7
CMOS linear image sensor
S12443
Standard packing specifications
Reel (conforms to JEITA ET-7200)
Dimensions
330 mm
Hub diameter
100 mm
Tape width
32 mm
Material
Plastic*16
Electrostatic characteristics
Conductive
*16: Compound of polyacetylene, polypyrrole, polythiophene and polyaniline
Embossed (unit: mm, material: plastic*16, conductive)
1.75 ± 0.1
8.0 ± 0.1
0.3
2.0 ± 0.1
4.0 ± 0.1
+0.1
ϕ1.5 -0
23.2 ± 0.1
14.2 ± 0.1
28.4 ± 0.1
32.0 ± 0.3
Circle holes
1.9 ± 0.1
3.0 ± 0.1
Reel feed derection
0.2 ± 0.05
Enlongated circle holes
+0.1
ϕ1.5 -0 /2
KMPDC0493EA
Packing quantity
1000 pcs/reel
Packing specifications may vary on orders less than 1000 pieces.
Packing type
Reel and desiccant in moisture-proof packing (vaccum-sealed)
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CMOS linear image sensor
S12443
Recommended temperature profile for reflow soldering (typical example)
300 °C
Peak temperature
260 °C max.
Peak temperature - 5 °C
30 s max.
Cooling
6 °C/s max.
Heating
3 °C/s max.
Temperature
217 °C
200 °C
150 °C
Preheating
60 to 120 s
Soldering
60 to 150 s
Time
KMPDB0405EB
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 4 weeks.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance.
Precautions
(1) Electrostatic countermeasures
· This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device
with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools.
· Protect this device from surge voltages which might be caused by peripheral equipment.
(2) Package handling
· The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface
of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when
designing the optical systems.
· Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air.
(3) Surface protective tape
· Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the
tape before use.
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CMOS linear image sensor
S12443
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙
∙
∙
∙
Disclaimer
Image sensor
Surface mount type products
Resin-sealed CMOS linear image sensors
Information described in this material is current as of June, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1137E06 Jun. 2016 DN
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