s11638 kmpd1130e

CMOS linear image sensor
S11638
Achieves high sensitivity by adding an
amplifier to each pixel
The S11638 is a CMOS linear image sensor that achieves high sensitivity by adding an amplifier to each pixel. It has a long
photosensitive area (effective photosensitive area length: 28.672 mm) consisting of 2048 pixels, each with a pixel size of 14
× 42 μm. Compared to our previous product, the S11638 has high sensitivity in UV region.
Features
Applications
Pixel size: 14 × 42 μm
Spectrometers
2048 pixels
Position detection
Effective photosensitive area length: 28.672 mm
Image reading
High sensitivity: 160 V/(lx·s)
Encoders
Simultaneous charge integration for all pixels
Barcode readers
Variable integration time function (electronic shutter function)
5 V single power supply operation
Built-in timing generator allows operation with only
start and clock pulse inputs
Video data rate: 10 MHz max.
Small input terminal capacitance: 5 pF
Structure
Parameter
Number of pixels
Pixel size
Photosensitive area length
Package
Window material
Specification
2048
14 × 42
28.672
LCP (liquid crystal polymer)
Quartz
Unit
μm
mm
-
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
Symbol
Vdd
V(CLK)
V(ST)
Topr
Tstg
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Value
-0.3 to +6
-0.3 to +6
-0.3 to +6
-40 to +65
-40 to +65
Unit
V
V
V
°C
°C
*1: No condensation
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
CMOS linear image sensor
S11638
Recommended terminal voltage (Ta=25 °C)
Parameter
Symbol
Vdd
Supply voltage
Clock pulse voltage
Start pulse voltage
High level
Low level
High level
Low level
V(CLK)
V(ST)
Min.
4.75
3
0
3
0
Typ.
5
Vdd
Vdd
-
Max.
5.25
Vdd + 0.25
0.3
Vdd + 0.25
0.3
Unit
V
V
V
V
V
Typ.
5
5
Max.
-
Unit
pF
pF
Max.
10 M
260
50
Unit
Hz
Hz
Ω
mA
Input terminal capacitance (Ta=25 °C, Vdd=5 V)
Parameter
Symbol
Clock pulse input terminal capacitance C(CLK)
Start pulse input terminal capacitance C(ST)
Min.
-
Electrical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V]
Parameter
Clock pulse frequency
Video data rate
Output impedance
Current consumption*2 *3
Symbol
f(CLK)
VR
Zo
I
Min.
200 k
70
20
Typ.
f(CLK)
30
*2: f(CLK)=10 MHz
*3: Current consumption increases as the clock pulse frequency increases. The current consumption is 10 mA typ. at f(CLK)=200 kHz.
Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz]
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity*4
Conversion efficiency*5
Dark output voltage*6
Saturation output voltage*7
Readout noise
Dynamic range 1*8
Dynamic range 2*9
Output offset voltage
Photoresponse nonuniformity*4 *10
Image lag*11
Symbol
λ
λp
R
CE
Vd
Vsat
Nr
DR1
DR2
Vo
PRNU
IL
Min.
0
0.8
0.3
0.3
-
Typ.
200 to 1000
700
160
13
0.4
1.2
0.6
2000
3000
0.5
±2
-
Max.
4
1.8
1.5
0.9
±10
0.1
Unit
nm
nm
V/(lx·s)
μV/emV
V
mV rms
times
times
V
%
%
Measured with a tungsten lamp of 2856 K
Output voltage generated per one electron
Integration time Ts=10 ms
Difference from Vo
DR1= Vsat/Nr
DR2= Vsat/Vd
Integration time Ts=10 ms
Dark output voltage is proportional to the integration time and so the shorter the integration time, the wider the dynamic range.
*10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 2042 pixels excluding 3 pixels each at
both ends, and is defined as follows:
PRNU= ΔX / X × 100 (%)
X: average output of all pixels, ΔX: difference between X and maximum output or minimum output
*11: Signal components of the preceding line data that still remain even after the data is read out in a saturation output state.
Image lag increases when the output exceeds the saturation output voltage.
*4:
*5:
*6:
*7:
*8:
*9:
2
CMOS linear image sensor
S11638
Spectral response (typical example)
(Ta=25 °C)
100
Relative sensitivity (%)
80
60
40
20
0
200
400
600
800
1000
Wavelength (nm)
KMPDB0354EA
Block diagram
Shift register
Trig 23
CLK 3
ST 24
Timing
generator
15 EOS
Hold circuit
13 Video
Amp array
Bias
generator
Photodiode array
1 12
2 11
Vdd
Vss
KMPDC0398EA
3
CMOS linear image sensor
S11638
Output waveform of one pixel
The timing for acquiring the Video signal is synchronized with the rising edge of a trigger pulse (See red arrow below.).
f(CLK)=VR=10 MHz
CLK
5 V/div.
GND
Trig
5 V/div.
GND
1.7 V (saturation output voltage=1.2 V)
Video
0.5 V (output offset voltage)
GND
1 V/div.
20 ns/div.
f(CLK)=VR=1 MHz
CLK
5 V/div.
GND
Trig
5 V/div.
GND
1.7 V (saturation output voltage=1.2 V)
Video
1 V/div.
0.5 V (output offset voltage)
GND
200 ns/div.
4
CMOS linear image sensor
S11638
Timing chart
art (S11638)
1 2 3 4 5
1 2 3 4
51 52 53
87 88 89
CLK
Integration time
tlp(ST)
ST
thp(ST)
tpi(ST)
87 clocks
2048
1
2048
Video
1
89
Trig
EOS
tr(CLK)
tf(CLK)
CLK
1/f(CLK)
ST
tr(ST)
tf(ST)
thp(ST)
tlp(ST)
tpi(ST)
Parameter
Start pulse width interval*12
Start pulse high period*12 *13
Start pulse low period
Start pulse rise and fall times
Clock pulse duty
Clock pulse rise and fall times
Symbol
tpi(ST)
thp(ST)
tlp(ST)
tr(ST), tf(ST)
tr(CLK), tf(CLK)
KMPDC0399EB
Min.
98/f(CLK)
6/f(CLK)
92/f(CLK)
0
45
0
Typ.
10
50
10
Max.
30
55
30
Unit
s
s
s
ns
%
ns
*12: Dark output increases if the start pulse period or the start pulse high period is lengthened.
*13: The integration time equals the high period of ST plus 48 CLK cycles.
The shift register starts operation at the rising edge of CLK immediately after ST goes low.
The integration time can be changed by changing the ratio of the high and low periods of ST.
If the first Trig pulse after ST goes low is counted as the first pulse, the Video signal is acquired at the rising edge of the 89th Trig
pulse.
5
CMOS linear image sensor
S11638
Operation example
When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 2048 channels)
Clock pulse frequency = Video data rate = 10 MHz
Start pulse cycle = 2140/f(CLK) = 2140/10 MHz = 214 μs
High period of start pulse = Start pulse cycle - Start pulse’s low period min.
= 2140/f(CLK) - 92/f(CLK) = 2140/10 MHz - 92/10 MHz = 204.8 μs
Integration time is equal to the high period of start pulse + 48 cycles of clock pulses, so it will be 204.8 + 4.8 = 209.6 μs.
thp(ST)=204.8 µs
tlp(ST)=9.2 µs
ST
tpi(ST)=214 µs
KMPDC0366EB
Dimensional outline (unit: mm)
Photosensitive area 28.672
Photosensitive
surface
a
13
1
12
a’
41.6 ± 0.2
0.5 ± 0.05*3
a-a’ cross section
Direction of scan
3.0
0.51
10.2 ± 0.5
0.2
1 ch
2.54
4.0 ± 0.5
4.55 ± 0.4
Photosensitive area 0.042
9.1 ± 0.1
10.02 ± 0.3
24
1.4 ± 0.2*2
±15°
14.336 ± 0.3
1.35 ± 0.2*1
Tolerance unless otherwise noted: ±0.1
*1: Distance from window upper surface
to photosensitive surface
*2: Distance from package bottom
to photosensitive surface
*3: Glass thickness
±15°
27.94
KMPDA0283EB
6
CMOS linear image sensor
S11638
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
Symbol
Vdd
Vss
CLK
NC
NC
NC
NC
NC
NC
NC
11
Vss
12
Vdd
I/O
I
I
I
Description
Supply voltage
GND
Clock pulse
No connection
No connection
No connection
No connection
No connection
No connection
No connection
Pin no.
13
14
15
16
17
18
19
20
21
22
Symbol
Video
NC
EOS
NC
NC
NC
NC
NC
NC
NC
I/O
O
GND
23
Trig
O
Supply voltage
24
ST
I
O
Description
Video signal
No connection
End of scan
No connection
No connection
No connection
No connection
No connection
No connection
No connection
Trigger pulse for video signal
acquisition
Start pulse
Note: Leave the “NC” terminals open and do not connect them to GND.
Connect a buffer amplifier for impedance conversion to the video output terminal so as to minimize the current flow. As the buffer
amplifier, use a high input impedance operational amplifier with JFET or CMOS input.
Application circuit example
+5 V
0.1 µF
+5 V
+
+5 V
22 µF/25 V
0.1 µF
0.1 µF
+
22 µF/25 V
+
22 µF/25 V
ST
CLK
82 Ω
74HC541
+5 V
22 µF/25 V
+
1
Vdd
ST 24
2
Vss
Trig 23
3
CLK
NC 22
4
NC
NC 21
5
NC
NC 20
6
NC
NC 19
7
NC
NC 18
8
NC
NC 17
9
NC
NC 16
10 NC
EOS 15
11 Vss
NC 14
12 Vdd
Video 13
82 Ω
Trig
EOS
74HC541
+5 V
0.1 µF
+
22 µF/25 V
100 Ω
S11638
+
-
LT1818
51 Ω
Video
22 pF
0.1 µF
0.1 µF
22 µF/25 V
+
-5 V
KMPDC0400EA
7
CMOS linear image sensor
S11638
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect
this device from surge voltages which might be caused by peripheral equipment.
(2) Light input window
If dust or dirt gets on the light input window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton
swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so
that no spot or stain remains.
(3) Soldering
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Operating and storage environments
Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
(5) UV exposure
This device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the
device. Also, be careful not to allow UV light to strike the cemented portion of the glass.
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensors/Precautions
Information described in this material is current as of November, 2013.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1130E04 Nov. 2013 DN
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