CMOS linear image sensors S8377/S8378 series Built-in timing generator and signal processing circuit; 5 V single supply operation The S8377/S8378 series is a family of CMOS linear image sensors designed for image input applications. These linear image sensors operate from 5 V single supply with only start and clock pulse inputs, making them easy to use. The signal processing circuit has a charge amplifier with excellent input/output characteristics and allows signal readout at 500 kHz. The photodiodes of the S8377 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 μm. The photodiodes of the S8378 series also have a height of 0.5 mm but are arrayed at a spacing of 25 μm. The photodiodes are available in 3 different pixel quantities for each series: 128 (S8377-128Q), 256 (S8377-256Q, S8378-256Q), 512 (S8377-512Q, S8378-512Q) and 1024 (S8378-1024Q). Quartz glass is the standard window material. Features Applications Wide photosensitive area Pixel pitch: 50 μm (S8377 series) 25 μm (S8378 series) Pixel height: 0.5 mm Image input devices Optical sensing devices On-chip charge amplifier with excellent input/output characteristics Built-in timing generator allows operation with only start and clock pulse inputs Maximum operating clock frequency: 500 kHz Spectral response range: 200 to 1000 nm 5 V single power supply operation 8-pin small package, S8377 and S8378 series are pin compatible. Structure Parameter Number of pixels Pixel pitch Pixel height Package length Number of pins Package Window material S8377-128Q 128 S8377-256Q 256 50 S8377-512Q 512 15.8 22.2 35.0 S8378-256Q 256 S8378-512Q 512 25 S8378-1024Q 1024 22.2 35.0 0.5 15.8 8 Ceramic Quartz Unit μm mm mm - Absolute maximum ratings Parameter Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Symbol Vdd Vg V(CLK) V(ST) Topr Tstg Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +10 -0.3 to +10 -0.3 to +10 -0.3 to +10 -20 to +60 -20 to +80 Unit V V V V °C °C *1: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 S8377/S8378 series CMOS linear image sensors Recommended terminal voltage Parameter Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage Symbol Vdd High gain Low gain High level Low level High level Low level Vg V(CLK) V(ST) Min. 4.75 0 Vdd - 0.25 Vdd - 0.25 0 Vdd - 0.25 0 Typ. 5 Vdd Vdd Vdd - Max. 5.25 0.4 Vdd + 0.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Unit V V V V V V V Min. 0.1 k - Typ. 1 15 Max. 500 k - Unit Hz k mW Electrical characterisitics Parameter Clock pulse frequency*2 Output impedance*3 Power consumption Symbol f(CLK) Zo P *2: Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, Vg=5 V (low gain) *3: An increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. Connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifier. Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V] Parameter Symbol Spectral response range Peak sensitivity wavelength High gain Photosensitivity Low gain Dark current Saturation charge Feedback capacitance*4 High gain of charge amplifier Low gain High gain 5 Dark output voltage* Low gain High gain Saturation output voltage Low gain High gain Saturation exposure*6 Low gain p S ID Qsat Cf Vd Vsat Esat High gain Readout noise Nr Low gain Photoresponse nonuniformity*7 PRNU Min. 2.8 2.1 - S8377 series Typ. 200 to 1000 500 22 4.4 0.01 12.5 1 5 1.0 0.2 3.2 2.5 145 570 0.4 (-128Q) 0.5 (-256Q) 0.8 (-512Q) 0.1 (-128Q) 0.15 (-256Q) 0.2 (-512Q) - Max. Min. 0.03 3.0 0.6 ±3 2.8 2.1 - S8378 series Typ. 200 to 1000 500 22 4.4 0.01 6.3 0.5 2.5 2.0 0.4 3.2 2.5 145 570 0.9 (-256Q) 1.3 (-512Q) 2.1 (-1024Q) 0.2 (-256Q) 0.3 (-512Q) 0.4 (-1024Q) - Max. 0.03 6.0 1.2 ±3 Unit nm nm V/lx·s pA pC pF mV V mlx·s mV rms % *4: Vg=5 V (low gain), Vg=0 V (high gain) *5: Integration time=100 ms *6: Measured with a tungsten lamp of 2856 K *7: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is defined as follows: PRNU= X/X × 100 [%] X: average output of all pixels, X: difference between X and maximum or minimum output 2 S8377/S8378 series CMOS linear image sensors Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 200 400 600 800 1000 Wavelength (nm) KMPDB0213EC Block diagram CMOS digital shift register Charge amp Address switch Clamp circuit 7 EOS 3 Vg 6 Video Photodiode array 1 2 3 4 5 N-1 N Timing generator 4 8 1 2 Vdd Vss CLK ST KMPDC0150EB 3 S8377/S8378 series CMOS linear image sensors Timing chart tpi(ST) Integration time ST CLK Video EOS 2 1 tf(ST) n-1 n tr(ST) ST t(CLK-ST) tpw(CLK) tr(CLK) tf(CLK) Vout CLK Video tvd1 tvd2 KMPDC0149EC Parameter Start pulse width interval Start pulse rise and fall times Clock pulse width Clock pulse rise and fall times Clock pulse-start pulse timing Video delay time 1 Video delay time 2 Symbol Min. 1/f × tpi(ST) (number of pixels + 2) 0 tr(ST), tf(ST) 1000 ns tpw(CLK) 0 tr(CLK), tf(CLK) 400 ns t(CLK-ST) 200 tvd1 50 tvd2 Typ. Max. Unit - - s 20 20 300 150 30 5 ms 30 5 ms 400 250 ns ns ns ns Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts operating at this timming. Integration time is determined by the interval between the CLK falling edge during the Low period of a start pulse and the CLK falling edge during the Low period of the next start pulse. However, since the charge integration of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. 4 S8377/S8378 series CMOS linear image sensors Dimensional outlines (unit: mm) 1.3 ± 0.2* 7.62 ± 0.25 0.25 -+0.05 0.03 3.2 ± 0.3 7.87 ± 0.25 Photosensitive area 6.4 × 0.5 3.935 ± 0.2 S8377-128Q, S8378-256Q 3.935 ± 0.2 Photosensitive surface * Distance from upper surface of window to photosensitive surface 5.0 ± 0.5 3.0 ± 0.3 15.8 ± 0.3 0.51 ± 0.05 2.54 ± 0.13 7.62 ± 0.13 KMPDA0150ED 7.62 ± 0.25 1.3 ± 0.2* 0.25 +0.05 - 0.03 6.4 ± 0.3 5.0 ± 0.5 22.2 ± 0.3 0.51 ± 0.05 Photosensitive surface * Distance from upper surface of window to photosensitive surface 3.0 ± 0.3 3.935 ± 0.2 7.87 ± 0.25 Photosensitive area 12.8 × 0.5 3.935 ± 0.2 S8377-256Q, S8378-512Q 2.54 ± 0.13 7.62 ± 0.13 KMPDA0151ED 5 S8377/S8378 series CMOS linear image sensors 7.62 ± 0.25 1.3 ± 0.2* 5.0 ± 0.5 35.0 ± 0.35 0.51 ± 0.05 2.54 ± 0.13 Photosensitive surface * Distance from upper surface of window to photosensitive surface 3.0 ± 0.3 3.935 ± 0.2 7.87 ± 0.25 12.8 ± 0.3 0.25 +0.05 - 0.03 Photosensitive area 25.6 × 0.5 3.935 ± 0.2 S8377-512Q, S8378-1024Q 7.62 ± 0.13 KMPDA0152ED Pin connections Pin no. Symbol Name of pin 1 CLK Clock pulse 2 ST Start pulse 3 4 5 6 7 8 Vg Vdd NC Video EOS Vss Gain selection voltage Supply voltage Video End of scan Ground CLK 1 8 Vss ST 2 7 EOS Vg 3 6 Vide Vdd 4 Function Pulse input to operate the shift register. The readout time (data rate) equals the clock pulse frequency. Starts the shift register operation. Integration time is determined by the interval between the CLK falling edge during the Low period of a start pulse and the CLK falling edge during the Low period of the next start pulse. Input of 5 V selects “Low gain” and 0 V selects “High gain”. 5 V typ. Open Signal output. Positive-going output from 1 V Negative-going signal output obtained at a timing following the last pixel scan 5 NC KMPDC0151EA 6 CMOS linear image sensors S8377/S8378 series Handling precautions (1) Electrostatic countermeasures Although the CMOS linear image sensor is protected against static electricity, proper electrostatic countermeasures must be provided to prevent device destruction by static electricity. For example, such measures include wearing non-static gloves and clothes, and grounding the work area and tools. (2) Incident window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) UV exposure The CMOS linear image sensor is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Information described in this material is current as of February, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1066E09 Feb. 2014 DN 7