CMOS linear image sensors S10453 series 10 MHz readout, voltage output type The S10453 series is a voltage output type CMOS linear image sensor that operates at a video data rate of 10 MHz. This CMOS linear image sensor has a pixel size of 25 × 500 μm and is available in two types of 512 pixels (S10453-512Q) or 1024 pixels (S10453-1024Q). Features Applications Video data rate: 10 MHz max. Position detection Voltage output type Image reading 5 V single supply operation Simultaneous charge integration Shutter function Built-in timing generator allows operation with only start and clock pulse inputs. Spectral response range: 200 to 1000 nm Pixel size: 25 (H) × 500 (V) μm Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Window material S10453-512Q 512 S10453-1024Q 1024 25 500 12.8 25.6 Ceramic Quartz Unit μm μm mm - Absolute maximum ratings Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 °C -0.3 to +6 V Ta=25 °C -0.3 to +6 V Clock pulse voltage V(CLK) Start pulse voltage V(ST) Ta=25 °C -0.3 to +6 V Operating temperature*1 Topr -5 to +65 °C Storage temperature*1 Tstg -10 to +85 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation www.hamamatsu.com 1 CMOS linear image sensors S10453 series Recommended terminal voltage Parameter Symbol Vdd Supply voltage High Low High Low Clock pulse voltage Start pulse voltage V(CLK) V(ST) Min. 4.75 Vdd - 0.25 0 Vdd - 0.25 0 Typ. 5 Vdd Vdd - Max. 5.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Unit V V V V V Min. 2M 25 42 1.4 Typ. f(CLK) 34 52 1.6 Max. 10 M 43 62 1.8 Unit Hz MHz Electrical characteristics Parameter Clock pulse frequency Video data rate S10453-512Q Consumption current*2 S10453-1024Q Conversion efficiency Symbol f(CLK) VR I CE mA μV/e- *2: Ta=25 °C, Vdd=5 V, f(CLK)=10 MHz Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V(CLK)=V(ST)=5 V, f(CLK)=10 MHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range 200 to 1000 nm λ Peak sensitivity wavelength 540 600 660 nm λp Dark output voltage*3 Vd 3 30 mV Saturation output voltage*4 Vsat 2.8 3.2 V Noise Nr 1.1 2.0 mV rms Offset output voltage Vo 0.5 0.7 0.9 V PRNU % Photoresponse nonuniformity*5 *6 ±10 *3: Integration time Ts=10 ms *4: Difference from Vo *5: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using pixels excluding pixels each at both ends, and is defined as follows: PRNU = ΔX/X × 100 [%] X: average output of all pixels, ΔX: difference between X and maximum output or minimum output *6: Excluding the start pixel and last pixel Spectral response (typical example) (Ta=25 °C) 100 ST CLK 2 3 Vdd 5 8 21 GND 4 11 Bias generator Timing generator 80 Relative sensitivity (%) Block diagram Shift register 10 EOS 60 Hold circuit 9 Video Charge amp array 40 1 2 Photodiode array N-1 N 20 KMPDC0256EC 0 200 400 600 800 1000 1200 Wavelength (nm) KMPDB0273EA 2 CMOS linear image sensors S10453 series Timing chart 1 2 3 4 12 13 14 15 CLK Integration time ST thp(ST) tlp(ST) tpi(ST) n 1 Video 14 clocks EOS tr(CLK) tf(CLK) CLK CLK 1/f(CLK) Video tvd1 ST tvd2 tr(ST) tf(ST) thp(ST) tlp(ST) tpi(ST) Parameter Start pulse interval Start pulse high period Start pulse low period Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Video delay time 1*7 Video delay time 2*7 *7: Ta=25 °C, f(CLK)=10 MHz KMPDC0255ED Symbol tpi(ST) thp(ST) tlp(ST) tr(ST), tf(ST) tr(CLK), tf(CLK) tvd1 tvd2 Min. 23/f(CLK) 8/f(CLK) 15/f(CLK) 0 45 0 5 5 Typ. 20 50 20 13 20 Max. 1100 m 1000 m 100 m 30 55 30 18 28 Unit s s s ns % ns ns ns Note: The internal timing generator starts operation at the rising edge of CLK immediately after ST goes low. The rising edge of this CLK is regarded as “1”. The integration time equals the high period of ST. When the ST pulse is set to low while the shift register is operating, the operation of the shift register is reset and the next shift register operation will start. The integration time can be changed by changing the ratio of the high and low periods of ST. 3 CMOS linear image sensors S10453 series Operation example S10453-512Q When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 512 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 530/f(CLK) = 530/10 MHz = 53 μs Start pulse high period = Start pulse cycle - Minimum start pulse low period = 530/f(CLK) - 15/f(CLK) = 530/10 MHz - 15/10 MHz = 51.5 μs Integration time is equal to the start pulse high period, so it will be 51.5 μs. tlp(ST)=1.5 µs thp(ST)=51.5 µs ST tpi(ST)=53 µs KMPDC0393EA S10453-1024Q When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 1024 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 1042/f(CLK) = 1042/10 MHz = 104.2 μs Start pulse high period = Start pulse cycle - Minimum start pulse low period = 1042/f(CLK) - 15/f(CLK) = 1042/10 MHz - 15/10 MHz = 102.7 μs Integration time is equal to the start pulse high period, so it will be 102.7 μs. tlp(ST)=1.5 µs thp(ST)=102.7 µs ST tpi(ST)=104.2 µs KMPDC0394EA 4 CMOS linear image sensors S10453 series Dimensional outline (unit: mm) S10453-512Q 1.4 ± 0.2*2 Index mark 1.35 ± 0.2*3 31.75 ± 0.30 6.85 ± 0.3 (5.95) Photosensitive surface 0.5 ± 0.05*4 0.25 10.16 ± 0.25 12 10.05 ± 0.25 22 11 1 ch 3.0 ± 0.3 4.7 ± 0.2*1 Photosensitive area 12.8 × 0.5 Direction of scan 5.0 ± 0.5 0.51 ± 0.05 2.54 ± 0.13 25.4 ± 0.13 *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness KMPDA0311EA S10453-1024Q 1.4 ± 0.2*2 1.35 ± 0.2*3 40.64 ± 0.41 0.5 ± 0.05*4 (12.35) 12 10.05 ± 0.25 22 Photosensitive surface 10.16 ± 0.25 4.7 ± 0.2*1 13.25 ± 0.3 0.25 Photosensitive area 25.6 × 0.5 Direction of scan 3.0 ± 0.3 11 Index mark 1 ch 2.54 ± 0.13 25.4 ± 0.13 5.0 ± 0.5 0.51 ± 0.05 *1: Distance from pin center to phtosensitive area center *2: Distance from package bottom to photosensitive surface *3: Distance from upper surface of window to photosensitive surface *4: Window thickness KMPDA0312EA 5 CMOS linear image sensors S10453 series Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Symbol NC ST CLK GND Vdd NC NC Vdd Video EOS GND NC NC NC NC NC MC NC NC NC Vdd NC I/O Function No connection Start pulse Clock pulse Ground Supply voltage No connection No connection Supply voltage Video output End of scan Ground No connection No connection No connection No connection No connection No connection No connection No connection No connection Supply voltage No connection I I I I O O I Application circuit example +5 V 0.1 µF 22 µF /25 V + +5 V 0.1 µF + 22 µF /25 V NC NC ST Vdd CLK NC GND NC Vdd NC NC NC NC NC Vdd NC Video NC EOS NC GND NC 82 Ω ST CLK 82 Ω 74HC541 +5 V S10453 series 0.1 µF +6 V 0.1 µF + 100 Ω + - 22 µF/25 V LT1818 51 Ω Video 22 pF 0.1 µF 22 µF /25 V + -6 V + 22 µF /25 V EOS 74HC541 KMPDC0414EA 6 CMOS linear image sensors S10453 series Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure The device is designed to suppress performance deterioration due to UV exposure. Even so, avoid unnecessary UV exposure to the device. Also, be careful not to allow UV light to strike the cemented portion between the ceramic base and the glass. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions Information described in this material is current as of March, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. 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Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1101E08 Mar. 2014 DN 7