IMAGE SENSOR NMOS linear image sensor S8380/S8381 series NMOS linear image sensors with high IR sensitivity S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm). The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S8381 series also have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series, 128 (S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard window material. Features Applications l High sensitivity in the IR and soft X-ray regions l Wide active area Pixel pitch: 50 µm (S8380 series) 25 µm (S8381 series) Pixel height: 2.5 mm l High UV sensitivity with good stability l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Lower power consumption: 1 mW Max. l Start pulse and clock pulses are CMOS logic compatible Figure 1 Equivalent circuit st 1 CLOCK 2 Figure 2 Active area structure DIGITAL SHIFT REGISTER (MOS SHIFT REGISTER) END OF SCAN 2.5 mm START CLOCK l Multichannel spectrophotometry l Image readout system ACTIVE VIDEO ACTIVE PHOTODIODE Vss b SATURATION CONTROL GATE SATURATION CONTROL DRAIN 1.0 µm a DUMMY VIDEO OXIDATION SILICON N TYPE SILICON 1.0 µm KMPDC0020EA 400 µm DUMMY DIODE P TYPE SILICON S8380 SERIES: a=50 µm, b=45 µm S8381 SERIES: a=25 µm, b=20 µm KMPDA0125EA ■ Absolute maximum ratings Parameter Input pulse (φ1, φ2, φst) voltage Power consumption *1 Operating temperature *2 Storage temperature *1: Vφ=5.0 V *2: No condensation Symbol Vφ P Topr Tstg Value 15 1 -40 to +65 -40 to +85 Unit V mW °C °C 1 NMOS linear image sensor S8380/S8381 series ■ Shape specifications Parameter Number of pixels Package length Number of pin Window material *3 Weight S8380-128Q S8380-256Q 128 256 31.75 22 Quartz 3.0 S8380-512Q 512 40.6 3.5 S8381-256Q S8381-512Q S8381-1024Q 256 512 1024 31.75 40.6 22 Quartz 3.0 3.5 Unit mm g *3: Fiber optic plate is available. ■ Specifications (Ta=25 °C) Parameter Symbol Min. - S8380 series Typ. Max. 50 2.5 - Pixel pitch Pixel height Spectral response range 200 to 1000 λ (10 % of peak) Peak sensitivity wavelength 750 λp Photodiode dark current * 4 ID 0.2 Photodiode capacitance *4 Cph 20 Saturation exposure * 4, *5 Esat 90 Saturation output charge * 4 Qsat 50 P h o to re s p o n s e n o n -u n ifo rm ity * 6 PRNU *4: Vb=2.0 V, Vφ=5.0 V *5: 2856 K, tungsten lamp *6: 50 % of saturation, excluding the start pixel and last pixel Min. - S8381 series Typ. Max. 25 2.5 200 to 1000 0.6 ±3 - 750 0.1 10 90 25 - Unit µm mm nm 0.3 ±3 nm pA pF mlx · s pC % ■ Electrical characteristics (Ta=25 °C) P a ra m e te r S ym b o l C ondition Clock pulse (φ1, φ2) voltage High Vφ1, Vφ2 (H) Low Vφ1, Vφ2 (L) High Vφs (H) Start pulse (φst) voltage Low Vφs (L) Video bias voltage *7 Vb Saturation control gate voltage Vscg Saturation control drain voltage Vscd trφ1, trφ2 C lo ck p ulse (φ1, φ2) rise / fa ll tim e * 8 tfφ1, tfφ2 Clock pulse (φ1, φ2) pulse width tpwφ1, tpwφ2 Start pulse (φst) rise / fall time trφs, tfφs Start pulse (φst) pulse width tpwφs Start pulse (φst) and clock pulse tφov (φ2) overlap 8 Clock pulse space * X1, X2 Data rate * 9 f Video delay time tvd 50 % o f sa tu ra tio n * 9, * 10 Clock pulse (φ1, φ2) line capacitance Cφ 5 V bias Cscg 5 V bias CV 2 V bias Saturation control gate (Vscg) line capacitance Video line capacitance Min. 4.5 0 4.5 0 1.5 - S8380 series Typ. Max. 5 10 0.4 10 Vφ1 0.4 Vφ - 3.0 Vφ - 2.5 0 Vb - Min. 4.5 0 4.5 0 1.5 - S8381 series Typ. Max. 5 10 0.4 10 Vφ1 0.4 Vφ - 3.0 Vφ - 2.5 0 Vb - Unit V V V V V V V - 20 - - 20 - ns 200 200 20 - - 200 200 20 - - ns ns ns 200 - - 200 - - ns trf - 20 0.1 - 80 (-128 Q ) 120 (-256 Q) 160 (-512 Q) 21 (-128 Q ) 36 (-256 Q ) 67 (-512 Q ) 12 (-128 Q ) 20 (-256 Q ) 35 (-512 Q ) 7 (-128 Q ) 11 (-256 Q ) 20 (-512 Q ) 2000 - trf - 20 0.1 - 100 (-256 Q ) 150 (-512 Q ) 200 (-1024 Q) 27 (-256 Q ) 50 (-512 Q ) 100 (-1024 Q) 14 (-256 Q ) 24 (-512 Q ) 45 (-1024 Q ) 10 (-256 Q ) 16 (-512 Q ) 30 (-1024 Q ) 2000 - ns kHz ns ns ns pF pF pF pF pF pF pF pF pF *7: Vφ is input pulse voltage (refer to figure 8). *8: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20 ” ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns (refer to figure 7). *9: Vb=2.0 V, Vφ=5.0 V *10: Measured with C7883 driver circuit. 2 NMOS linear image sensor S8380/S8381 series Figure 3 Dimensional outlines (unit: mm) ACTIVE AREA 12.8 × 2.5 5.4 ± 0.2 6.4 ± 0.3 31.75 1.3 ± 0.2 * 5.0 ± 0.2 PHOTOSENSITIVE SURFACE PHOTOSENSITIVE SURFACE 3.0 3.0 31.75 5.0 ± 0.2 10.4 10.4 3.2 ± 0.3 1.3 ± 0.2 * ACTIVE AREA 6.4 × 2.5 S8380-256Q, S8381-512Q 5.4 ± 0.2 S8380-128Q, S8381-256Q 0.51 0.25 0.51 0.25 2.54 2.54 25.4 10.16 25.4 10.16 * Optical distance from the outer surface of the quartz window to the chip surface * Optical distance from the outer surface of the quartz window to the chip surface KMPDA0060EA Figure 4 Pin connection 5.4 ± 0.2 S8380-512Q, S8381-1024Q ACTIVE AREA 25.6 × 2.5 KMPDA0061EA 10.4 12.8 ± 0.3 3.0 40.6 1.3 ± 0.2 * 5.0 ± 0.2 PHOTOSENSITIVE SURFACE 2 1 22 NC 1 2 21 NC st 3 20 NC Vss 4 19 NC Vscg 5 18 NC NC 6 17 NC Vscd 7 16 NC Vss 8 15 NC ACTIVE VIDEO 9 14 NC DUMMY VIDEO 10 13 NC Vsub 11 12 END OF SCAN Vss, Vsub and NC should be grounded. 0.51 0.25 KMPDC0056EA 2.54 25.4 10.16 * Optical distance from the outer surface of the quartz window to the chip surface KMPDA0062EA 3 NMOS linear image sensor S8380/S8381 series ■ Recommended operating conditions Terminal Input or output φ1, φ2 Input (CMOS logic compatible) φst Vss Vscg Input (CMOS logic compatible) Input Vscd Input Active video Output Dummy video Output Vsub Output (CMOS logic compatible) End of scan NC - Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of φ2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. Used for restricting blooming. This should be biased at a voltage equal to the video bias voltage. Video output signal. Connects to photodiode cathodes when the address is on. A positive voltage should be applied to the video line in order to use photodiodes with a reverse voltage. When the amplitude of φ1 and φ2 is 5 V, a video bias voltage of 2 V is recommended. This has the same structure as the active video, but is not connected to photodiodes, so only spike noise is output. This should be biased at a voltage equal to the active video or left as an open-circuit when not needed. Connected to the silicon substrate. This should be grounded. This should be pulled up at 5 V by using a 10 k Ω resistor. This is a negative going pulse that appears synchronously with the φ2 timing right after the last photodiode is addressed. Should be grounded. Figure 5 Spectral response (typical example) Figure 6 Output charge vs. exposure (Ta=25 ˚C) 0.5 10 (Typ. Vb=2 V, V =5 V, light source: 2856 K) 2 PHOTO SENSITIVITY (A/W) IR HIGH-SENSITIVITY TYPE S8380/S8381 SERIES SATURATION CHARGE 101 OUTPUT CHARGE (pC) 0.4 0.3 0.2 0.1 S8380 SERIES 10 0 S8381 SERIES 10 -1 10 -2 SATURATION EXPOSURE STANDARD TYPE 0 200 400 10-3 10-5 1200 1000 800 600 10-4 10-3 10-2 10-1 EXPOSURE (lx · s) WAVELENGTH (nm) KMPDB0161EA KMPDB0162EB Figure 7 Timing chart for driver circuit 1 2 V s (H) V s (L) V V V V Figure 8 Video bias voltage margin tpw s 10 tpw 1 1 (H) 1 (L) 2 (H) 2 (L) tpw 2 VIDEO BIAS VOLTAGE (V) st 100 tvd ACTIVE VIDEO OUTPUT END OF SCAN tr s st tf s tr 1 tf 1 8 ED ND ME M CO RE 6 X. S BIA MA 4 VIDEO BIAS RANGE 2 MIN. 1 X1 X2 tf 2 0 2 t ov 4 5 6 7 8 9 10 CLOCK PULSE AMPLITUDE (V) tr 2 KMPDC0022EA KMPDB0043EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KMPD1045E01 Oct. 2005 DN