HAMAMATSU S8380_10

IMAGE SENSOR
NMOS linear image sensor
S8380/S8381 series
NMOS linear image sensors with high IR sensitivity
S8380/S8381 series are designed to have higher sensitivity in the infrared and soft X-ray regions when compared to standard NMOS linear image
sensors. The peak sensitivity wavelength is in the near IR region (λp=750 nm).
The photodiodes of S8380 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S8381 series also
have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series, 128
(S8380-128Q), 256 (S8380-256Q, S8381-256Q) and 512 (S8380-512Q, S8381-512Q) and 1024 (S8381-1024Q). Quartz glass is the standard
window material.
Features
Applications
l High sensitivity in the IR and soft X-ray regions
l Wide active area
Pixel pitch: 50 µm (S8380 series)
25 µm (S8381 series)
Pixel height: 2.5 mm
l High UV sensitivity with good stability
l Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l Excellent output linearity and sensitivity spatial uniformity
l Lower power consumption: 1 mW max.
l Start pulse and clock pulses are CMOS logic compatible
■ Active area structure
■ Equivalent circuit
st
1
Clock
2
Digital shift register
(MOS shift register)
End of scan
2.5 mm
Start
Clock
l Multichannel spectrophotometry
l Image readout system
Active video
Active
photodiode
Vss
b
Saturation
control gate
Saturation
control drain
1.0 µm
a
Dummy video
Oxidation silicon
N type silicon
1.0 µm
KMPDC0020EA
400 µm
Dummy diode
P type silicon
S8380 series: a=50 µm, b=45 µm
S8381 series: a=25 µm, b=20 µm
KMPDA0125EA
■ Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption*1
Operating temperature*2
Storage temperature
*1: Vφ=5.0 V
*2: No condensation
Symbol
Vφ
P
Topr
Tstg
Value
15
1
-40 to +65
-40 to +85
Unit
V
mW
°C
°C
1
NMOS linear image sensor
S8380/S8381 series
■ Shape specifications
Parameter
S8380-128Q S8380-256Q S8380-512Q S8381-256Q S8381-512Q S8381-1024Q
Number of pixels
128
256
512
256
512
1024
Package length
31.75
40.6
31.75
40.6
Number of pin
22
22
Window material*3
Quartz
Quartz
Weight
3.0
3.5
3.0
3.5
*3: Fiber optic plate is available (excluding the S8380-128Q, S8381-256Q).
Unit
mm
g
■ Specifications (Ta=25 °C)
Parameter
Symbol
Min.
-
S8380 series
Typ.
Max.
50
2.5
-
Pixel pitch
Pixel height
Spectral response range
200 to 1000
λ
(10 % of peak)
Peak sensitivity wavelength
750
λp
Photodiode dark current* 4
0.2
ID
Photodiode capacitance*4
Cph
20
Saturation exposure* 4 *5
Esat
90
Saturation output charge* 4
Qsat
50
P h o to re s p o n s e n o n-u n ifo rm ity* 6
PRNU
*4: Vb=2.0 V, Vφ=5.0 V
*5: 2856 K, tungsten lamp
*6: 50% of saturation, excluding the start pixel and last pixel
Min.
-
S8381 series
Typ.
Max.
25
2.5
200 to 1000
0.6
±3
-
750
0.1
10
90
25
-
Unit
µm
mm
nm
0.3
±3
nm
pA
pF
mlx · s
pC
%
■ Electrical characteristics (Ta=25 °C)
P a ra m e te r
Clock pulse (φ1, φ2)
voltage
S ym b o l
High Vφ1, Vφ2 (H)
Low Vφ1, Vφ2 (L)
High
Vφs (H)
Start pulse (φst) voltage
Low
Vφs (L)
Video bias voltage*7
Vb
Saturation control gate voltage
Vscg
Saturation control drain voltage
Vscd
trφ1, trφ2
8
C lock pulse (φ1, φ2) rise / fall tim e*
tfφ1, tfφ2
Clock pulse (φ1, φ2) pulse width
tpwφ1, tpwφ2
Start pulse (φst) rise / fall time
trφs, tfφs
Start pulse (φst) pulse width
tpwφs
Start pulse (φst) and clock pulse
tφov
(φ2) overlap
8
Clock pulse space*
X1, X2
Data rate* 9
f
C ondition
Min.
4.5
0
4.5
0
1.5
-
S8380 series
Typ.
Max.
5
10
0.4
10
Vφ1
0.4
Vφ - 3.0 Vφ - 2.5
0
Vb
-
Min.
4.5
0
4.5
0
1.5
-
S8381 series
Typ.
Max.
5
10
0.4
10
Vφ1
0.4
Vφ - 3.0 Vφ - 2.5
0
Vb
-
Unit
V
V
V
V
V
V
V
-
20
-
-
20
-
ns
200
200
20
-
-
200
200
20
-
-
ns
ns
ns
200
-
-
200
-
-
ns
trf - 20
trf - 20
ns
0.1
2000
0.1
2000
kHz
50 % of
80 (-128 Q)
100 (-256 Q)
ns
saturation
120 (-256 Q)
150 (-512 Q)
Video delay time
tvd
ns
*9 *10
160 (-512 Q)
200 (-1024 Q)
ns
21 (-128 Q)
27 (-256 Q)
pF
Clock pulse (φ1, φ2)
5 V bias
Cφ
36 (-256 Q)
50 (-512 Q)
pF
line capacitance
67 (-512 Q)
100 (-1024 Q)
pF
12 (-128 Q)
14 (-256 Q)
pF
Saturation control gate (Vscg)
Cscg
5 V bias
20 (-256 Q)
24 (-512 Q)
pF
line capacitance
35 (-512 Q)
45 (-1024 Q)
pF
7 (-128 Q)
10 (-256 Q)
pF
Video line capacitance
CV
2 V bias
11 (-256 Q)
16 (-512 Q)
pF
20 (-512 Q)
30 (-1024 Q)
pF
*7: Vφ is input pulse voltage (refer to “■Video bias voltage margin”).
*8: trf is the clock pulse rise or fall time. A clock pulse space of “rise time/fall time - 20 ” ns (nanoseconds) or more should be
input if the clock pulse rise or fall time is longer than 20 ns (refer to “■Timing chart for driver circuit”).
*9: Vb=2.0 V, Vφ=5.0 V
*10: Measured with C7883 driver circuit.
2
NMOS linear image sensor
S8380/S8381 series
■ Dimensional outlines (unit: mm)
S8380-128Q, S8381-256Q
S8380-256Q, S8381-512Q
Active area
6.4 × 2.5
Active area
12.8 × 2.5
3.2 ± 0.3
6.4 ± 0.3
1 ch
5.2 ± 0.2
31.75 ± 0.3
Chip surface
Chip surface
Direction of scan
1.3 ± 0.2*1
0.25
25.4 ± 0.13
5.0 ± 0.5
5.0 ± 0.5
0.51 ± 0.05
2.54 ± 0.13
10.16 ± 0.25
0.25
2.54 ± 0.13
25.4 ± 0.13
10.16 ± 0.25
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from chip surface
to bottom of package
*3: Window thickness
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from chip surface
to bottom of package
*3: Window thickness
KMPDA0060ED
Active area
25.6 × 2.5
12.8 ± 0.3
5.2 ± 0.2
10.4 ± 0.25
1 ch
1.3 ± 0.2*1
0.5 ± 0.05*3
3.0 ± 0.3
5.0 ± 0.5
0.51 ± 0.05
1.4 ± 0.2*2
Chip surface
Direction of scan
KMPDA0061ED
■ Pin connection
S8380-512Q, S8381-1024Q
40.6 ± 0.3
1.4 ± 0.2*2
0.5 ± 0.05*
3
3.0 ± 0.3
1.3 ± 0.2*1
0.51 ± 0.05
1.4 ± 0.2*2
3.0 ± 0.3
0.5 ± 0.05*
3
Direction of scan
5.2 ± 0.2
31.75 ± 0.3
10.4 ± 0.25
10.4 ± 0.25
1 ch
0.25
2
1
22
NC
1
2
21
NC
st
3
20
NC
Vss
4
19
NC
Vscg
5
18
NC
NC
6
17
NC
Vscd
7
16
NC
Vss
8
15
NC
Active video
9
14
NC
Dummy video
10
13
NC
Vsub
11
12
End of scan
Vss, Vsub and NC should be grounded.
KMPDC0056EA
2.54 ± 0.13
25.4 ± 0.13
10.16 ± 0.25
*1: Distance from upper surface of quartz
window to chip surface
*2: Distance from chip surface
to bottom of package
*3: Window thickness
KMPDA0062ED
3
NMOS linear image sensor
S8380/S8381 series
■ Recommended operating conditions
Terminal
Input or output
φ1, φ2
Input
(CMOS logic compatible)
φst
Vss
Vscg
Input
(CMOS logic compatible)
Input
Vscd
Input
Active video
Output
Dummy video
Output
Vsub
Output
(CMOS logic compatible)
End of scan
NC
-
Description
Pulses for operating the MOS shift register. The video data rate is equal to the
clock pulse frequency since the video output signal is obtained synchronously
with the rise of φ2 pulse.
Pulse for starting the MOS shift register operation. The time interval between
start pulses is equal to the signal accumulation time.
Connected to the anode of each photodiode. This should be grounded.
Used for restricting blooming. This should be grounded.
Used for restricting blooming. This should be biased at a voltage equal to
the video bias voltage.
Video output signal. Connects to photodiode cathodes when the address is
on. A positive voltage should be applied to the video line in order to use
photodiodes with a reverse voltage. When the amplitude of φ1 and φ2 is 5 V,
a video bias voltage of 2 V is recommended.
This has the same structure as the active video, but is not connected to
photodiodes, so only spike noise is output. This should be biased at a
voltage equal to the active video or left as an open-circuit when not needed.
Connected to the silicon substrate. This should be grounded.
This should be pulled up at 5 V by using a 10 k Ω resistor. This is a negative
going pulse that appears synchronously with the φ2 timing right after the last
photodiode is addressed.
Should be grounded.
■ Spectral response (typical example)
■ Output charge vs. exposure
(Ta=25 ˚C)
0.5
(Typ. Vb=2 V, V =5 V, light source: 2856 K)
102
IR high-sensitivity type
S8380/S8381 series
Output charge (pC)
Photo sensitivity (A/W)
Saturation
charge
101
0.4
0.3
0.2
S8380 series
100
S8381 series
10
-1
10
-2
10
-3
Saturation exposure
0.1
Standard type
0
200
400
1200
1000
800
600
10
-5
10
-4
10
-3
10
-2
10
-1
KMPDB0161EA
KMPDB0162EB
■ Timing chart for driver circuit
V
V
V
V
■ Video bias voltage margin
tpw s
10
tpw 1
1 (H)
1 (L)
2 (H)
2 (L)
tpw 2
8
Video bias voltage (V)
1
2
V s (H)
V s (L)
0
Exposure (lx · s)
Wavelength (nm)
st
10
tvd
Active video output
End of scan
tr s
st
tf s
tr 1
.
x
Ma
s
6
d
de
bia
en
mm
co
Re
4
Video bias range
2
tf 1
Min.
1
X1
X2
tf 2
0
2
t ov
4
5
6
7
8
9
10
Clock pulse amplitude (V)
tr 2
KMPDC0022EA
KMPDB0043EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein.
Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)"
which means developmental specifications. ©2010 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KMPD1045E02
Jul. 2010 DN