Data Sheet

PHPT61010NY
100 V, 10 A NPN high power bipolar transistor
20 March 2015
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted
Device (SMD) power plastic package.
PNP complement: PHPT61010PY
2. Features and benefits
•
•
•
•
•
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified.
3. Applications
•
•
•
•
•
•
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
100
V
IC
collector current
-
-
10
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
20
A
RCEsat
collector-emitter
saturation resistance
IC = 10 A; IB = 1 A; tp ≤ 300 µs;
-
25
37
mΩ
δ ≤ 0.02; Tamb = 25 °C; pulsed
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PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E
emitter
2
E
emitter
3
E
emitter
4
B
base
mb
C
collector
Simplified outline
Graphic symbol
C
mb
B
E
sym123
1 2 3 4
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
PHPT61010NY
Package
Name
Description
Version
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4.
Marking codes
Type number
Marking code
PHPT61010NY
1010NAB
PHPT61010NY
Product data sheet
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PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
100
V
VCEO
collector-emitter voltage
open base
-
100
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
10
A
ICM
peak collector current
-
20
A
IB
base current
-
1
A
IBM
peak base current
single pulse; tp ≤ 1 ms
-
2
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
1.5
W
[2]
-
3.7
W
[3]
-
5
W
[4]
-
25
W
single pulse; tp ≤ 1 ms
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
[4]
PHPT61010NY
Product data sheet
Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al2O3, standard footprint.
Power dissipation from junction to mounting base.
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PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
aaa-015929
8
Ptot
(W)
6
(1)
4
(2)
2
(3)
0
-75
25
125
Tamb (°C)
225
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.
2
Power derating curves
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-mb)
thermal resistance
from junction to
mounting base
[1]
[2]
[3]
PHPT61010NY
Product data sheet
Min
Typ
Max
Unit
[1]
-
-
100
K/W
[2]
-
-
41
K/W
[3]
-
-
30
K/W
-
-
6
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm .
Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
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PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
aaa-015930
103
Zth(j-a)
(K/W)
duty cycle = 1
102
0.75
0.5
0.33
10
0.2
0.1
0.05
0.02
0.01
1
0
10-1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-015931
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
0.5
10
0.33
0.2
0.1
0.05
0.02
1
0.01
0
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT61010NY
Product data sheet
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100 V, 10 A NPN high power bipolar transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
ICES
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 0.5 A; Tamb = 25 °C
150
275
-
VCE = 2 V; IC = 1 A; tp ≤ 300 µs;
150
270
-
60
110
-
25
50
-
-
30
50
mV
-
120
180
mV
-
250
370
mV
-
25
37
mΩ
-
-
0.95
V
-
-
1.15
V
-
-
1.35
V
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 5 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 2 V; IC = 10 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
IC = 5 A; IB = 0.5 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
RCEsat
VBEsat
collector-emitter
saturation resistance
IC = 10 A; IB = 1 A; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C; pulsed
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 5 A; IB = 0.5 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
IC = 10 A; IB = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.5 A; Tamb = 25 °C
-
-
0.9
V
td
delay time
VCC = 12.5 V; IC = 5 A; IBon = 250 mA;
-
25
-
ns
tr
rise time
IBoff = -250 mA; Tamb = 25 °C
-
365
-
ns
ton
turn-on time
-
390
-
ns
ts
storage time
-
280
-
ns
tf
fall time
-
220
-
ns
toff
turn-off time
-
500
-
ns
PHPT61010NY
Product data sheet
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PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = 10 V; IC = 500 mA; f = 100 MHz;
-
145
-
MHz
-
40
70
pF
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-015976
500
aaa-015977
12
IB = 260 mA
hFE
400
190
IC
(A)
(1)
140
100
8
300
70
(2)
50
30
200
4
(3)
15
100
10
5
0
10-1
1
10
102
0
103
104
IC (mA)
VCE = 2 V
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 5.
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4.
0
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
PHPT61010NY
Product data sheet
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100 V, 10 A NPN high power bipolar transistor
aaa-015978
1.2
aaa-015979
1.2
VBE
(V)
VBEsat
(V)
1.0
1.0
0.8
0.8
(1)
(1)
0.6
0.6
(2)
(2)
0.4
0.2
10-1
Fig. 6.
1
10
(3)
0.4
(3)
102
0.2
10-1
103
104
IC (mA)
1
10
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig. 7.
aaa-015980
1
VCEsat
(V)
103
104
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-015981
1
VCEsat
(V)
(1)
(2)
10-1
102
10-1
(3)
(1)
10-2
(2)
(3)
10-2
(4)
10-3
10-1
Fig. 8.
1
10
102
10-3
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 20
Collector-emitter saturation voltage as a
function of collector current; typical values
(4) IC/IB = 10
PHPT61010NY
Product data sheet
Fig. 9.
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
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PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
aaa-015982
103
aaa-015983
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
(1)
(2)
10
10
(3)
(4)
(1)
1
1
(2)
(3)
10-1
10-2
10-1
10-1
1
10
102
10-2
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 100
(2) Tamb = 25 °C
(2) IC/IB = 50
(3) Tamb = −55 °C
(3) IC/IB = 20
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT61010NY
Product data sheet
10
102
103
104
IC (mA)
(4) IC/IB = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
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PHPT61010NY
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100 V, 10 A NPN high power bipolar transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 12. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT61010NY
Product data sheet
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100 V, 10 A NPN high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
E
A2
A
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w
b
A
X
c
1/2 e
A
(A3)
A1
C
q
L
detail X
0
y C
θ
5 mm
8°
scale
0°
Dimensions (mm are the original dimensions)
Unit(1)
A
A1
A2
A3
b
b2
max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62
mm
c
c2
D(1) D1(1) E(1) E1(1)
b3
b4
2.2
0.9
0.25 0.30 4.10 4.20
5.0
3.3
2.0
0.7
0.19 0.24 3.80
4.8
3.1
e
1.27
H
L
L1
L2
6.2
0.85
1.3
1.3
5.8
0.40
0.8
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outline
version
SOT669
References
IEC
JEDEC
JEITA
w
y
0.25
0.1
sot669_po
European
projection
Issue date
11-03-25
13-02-27
MO-235
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
PHPT61010NY
Product data sheet
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100 V, 10 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
(3×)
0.25
(2×)
0.25
(2×)
0.6
(4×)
3.45
0.6
(3×)
2
3.5
2.55
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
Dimensions in mm
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
PHPT61010NY
Product data sheet
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100 V, 10 A NPN high power bipolar transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT61010NY v.1
20150320
Product data sheet
-
-
PHPT61010NY
Product data sheet
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100 V, 10 A NPN high power bipolar transistor
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PHPT61010NY
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
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associated with their applications and products.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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PHPT61010NY
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100 V, 10 A NPN high power bipolar transistor
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grant, conveyance or implication of any license under any copyrights, patents
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Export control — This document as well as the item(s) described herein
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PHPT61010NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
15 / 16
PHPT61010NY
NXP Semiconductors
100 V, 10 A NPN high power bipolar transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
11.1
Test information ................................................... 10
Quality information ............................................. 10
12
Package outline ................................................... 11
13
Soldering .............................................................. 12
14
Revision history ................................................... 13
15
15.1
15.2
15.3
15.4
Legal information .................................................14
Data sheet status ............................................... 14
Definitions ...........................................................14
Disclaimers .........................................................14
Trademarks ........................................................ 15
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 March 2015
PHPT61010NY
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
16 / 16