Data Sheet

LF
PA
K
56
PHPT61002NYC
100V, 2 A NPN high power bipolar transistor
9 January 2014
Product data sheet
1. General description
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device
(SMD) power plastic package.
PNP complement: PHPT61002PYC
2. Features and benefits
•
•
•
•
High thermal power dissipation capability
High temperature applications up to 175 °C
Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
3. Applications
•
•
•
•
Load switch
Power management
Linear mode voltage regulator
Backlighting apllications
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
100
V
IC
collector current
-
-
2
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
6
A
RCEsat
collector-emitter
saturation resistance
IC = 2 A; IB = 200 mA; pulsed;
-
80
150
mΩ
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
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PHPT61002NYC
NXP Semiconductors
100V, 2 A NPN high power bipolar transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E
emitter
2
E
emitter
3
E
emitter
4
B
base
mb
C
collector
Simplified outline
Graphic symbol
C
mb
B
E
1 2 3 4
sym123
LFPAK56; PowerSO8 (SOT669)
6. Ordering information
Table 3.
Ordering information
Type number
PHPT61002NYC
Package
Name
Description
Version
LFPAK56;
Power-SO8
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
SOT669
7. Marking
Table 4.
Marking codes
Type number
Marking code
PHPT61002NYC
1002NCA
PHPT61002NYC
Product data sheet
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PHPT61002NYC
NXP Semiconductors
100V, 2 A NPN high power bipolar transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
100
V
VCEO
collector-emitter voltage
open base
-
100
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
2
A
ICM
peak collector current
-
6
A
IB
base current
-
0.5
A
Ptot
total power dissipation
[1]
-
1.25
W
[2]
-
3
W
[3]
-
5
W
[4]
-
25
W
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tamb
ambient temperature
-55
175
°C
Tstg
storage temperature
-65
175
°C
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated mounting pad for collector 6 cm .
Device mounted on an ceramic PCB; Al2O3; standard footprint.
Power dissipation from junction to mounting base.
aaa-010424
8
Ptot
(W)
6
(1)
4
(2)
2
(3)
0
-75
25
125
Tamb (°C)
225
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.
2
Power derating curves
PHPT61002NYC
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100V, 2 A NPN high power bipolar transistor
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
Conditions
in free air
Min
Typ
Max
Unit
[1]
-
-
115
K/W
[2]
-
-
50
K/W
[3]
-
-
30
K/W
-
-
6
K/W
thermal resistance
from junction to solder
point
[1]
[2]
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
2
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm .
Device mounted on an ceramic PCB, Al2O3, standard footprint.
aaa-010427
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
10
1
0.05
0.01
10-1
10-5
0.5
0.1
0.02
0.25
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
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Product data sheet
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NXP Semiconductors
100V, 2 A NPN high power bipolar transistor
aaa-010428
102
duty cycle = 1
Zth(j-a)
(K/W)
0.75
10
0.33
0.5
0.2
0.1
0.05
1
0.01
10-2
10-5
0.02
0.25
0
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10-1
1
10
102
tp (s)
103
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PHPT61002NYC
Product data sheet
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100V, 2 A NPN high power bipolar transistor
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
ICES
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 1.5 V; IC = 500 mA; Tamb = 25 °C
100
200
-
VCE = 10 V; IC = 500 mA; tp ≤ 300 µs;
150
250
-
80
200
-
20
140
-
10
100
-
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = 10 V; IC = 1 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
VCE = 10 V; IC = 2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VCE = 10 V; IC = 3 A; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C; pulsed
collector-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA; Tamb = 25 °C
-
50
75
mV
IC = 2 A; IB = 200 mA; pulsed;
-
160
300
mV
RCEsat
collector-emitter
saturation resistance
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
80
150
mΩ
VBEsat
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
-
0.92
1
V
-
1.08
1.2
V
VCEsat
IC = 2 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.1 A; Tamb = 25 °C
-
0.68
0.85
V
td
delay time
VCC = 12.5 V; IC = 1 A; IBon = 0.05 A;
-
20
-
ns
tr
rise time
IBoff = -0.05 A; Tamb = 25 °C
-
300
-
ns
ton
turn-on time
-
320
-
ns
ts
storage time
-
830
-
ns
tf
fall time
-
470
-
ns
toff
turn-off time
-
1300
-
ns
fT
transition frequency
-
140
-
MHz
-
11
-
pF
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
PHPT61002NYC
Product data sheet
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NXP Semiconductors
100V, 2 A NPN high power bipolar transistor
aaa-010806
500
aaa-010807
3
IB = 50 mA
hFE
400
40
35
30
2
(2)
300
45
IC
(A)
(1)
25
20
15
200
10
(3)
1
5
100
0
10-1
1
10
102
0
103
104
IC (mA)
VCE = 1 V
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 5.
(2) Tamb = 25 °C
Collector current as a function of collectoremitter voltage; typical values
(3) Tamb = −55 °C
Fig. 4.
0
DC current gain as a function of collector
current; typical values
aaa-010808
8
aaa-010809
1.6
VBE
(V)
VBEsat
(V)
6
1.2
4
0.8
(1)
(1)
(2)
(2)
2
0.4
(3)
(3)
0
10-1
Fig. 6.
1
10
102
0
10-1
103
104
IC (mA)
1
10
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PHPT61002NYC
Product data sheet
Fig. 7.
103
104
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
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100V, 2 A NPN high power bipolar transistor
aaa-010810
10
aaa-010812
10
VCEsat
(V)
VCEsat
(V)
1
1
(1)
(3)
10-1
(2)
(1)
Fig. 8.
(3)
10-2
10-2
10-3
10-1
(2)
10-1
1
10
102
10-3
10-1
103
104
IC (mA)
1
10
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-010813
103
Fig. 9.
aaa-010814
103
RCEsat
(Ω)
102
102
10
10
(2)
(3)
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
RCEsat
(Ω)
1
102
1
(1)
(1)
(2)
10-1
10-2
10-1
(3)
10-1
1
10
102
10-2
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT61002NYC
Product data sheet
10
102
103
104
IC (mA)
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
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100V, 2 A NPN high power bipolar transistor
11. Test information
- IB
input pulse
(idealized waveform)
90 %
- I Bon (100 %)
10 %
- I Boff
output pulse
(idealized waveform)
- IC
90 %
- I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig. 12. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mgd624
Fig. 13. Test circuit for switching times
PHPT61002NYC
Product data sheet
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100V, 2 A NPN high power bipolar transistor
12. Package outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
E
A2
A
SOT669
C
c2
b2
E1
b3
L1
mounting
base
b4
D1
D
H
L2
1
2
3
e
4
w
b
A
X
c
1/2 e
A
(A3)
A1
C
q
L
detail X
0
y C
θ
5 mm
8°
scale
0°
Dimensions (mm are the original dimensions)
Unit(1)
A
A1
A2
A3
b
b2
max 1.20 0.15 1.10
0.50 4.41
nom
0.25
min 1.01 0.00 0.95
0.35 3.62
mm
c
c2
D(1) D1(1) E(1) E1(1)
b3
b4
2.2
0.9
0.25 0.30 4.10 4.20
5.0
3.3
2.0
0.7
0.19 0.24 3.80
4.8
3.1
e
1.27
H
L
L1
L2
6.2
0.85
1.3
1.3
5.8
0.40
0.8
0.8
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Outline
version
SOT669
References
IEC
JEDEC
JEITA
w
y
0.25
0.1
sot669_po
European
projection
Issue date
11-03-25
13-02-27
MO-235
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
PHPT61002NYC
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100V, 2 A NPN high power bipolar transistor
13. Soldering
Footprint information for reflow soldering
SOT669
4.7
4.2
0.9
(3×)
0.25
(2×)
0.25
(2×)
0.6
(4×)
3.45
0.6
(3×)
2
3.5
2.55
0.25
(2×)
SR opening =
Cu + 0.075
1.1
2.15
3.3
SP opening =
Cu - 0.050
0.7
(4×)
1.27
3.81
solder lands
solder paste
125 µm stencil
solder resist
occupied area
Dimensions in mm
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
PHPT61002NYC
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100V, 2 A NPN high power bipolar transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT61002NYC v.1
20140109
Product data sheet
-
-
PHPT61002NYC
Product data sheet
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NXP Semiconductors
100V, 2 A NPN high power bipolar transistor
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
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PHPT61002NYC
Product data sheet
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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100V, 2 A NPN high power bipolar transistor
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
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PHPT61002NYC
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 January 2014
© NXP N.V. 2014. All rights reserved
14 / 15
PHPT61002NYC
NXP Semiconductors
100V, 2 A NPN high power bipolar transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 January 2014
PHPT61002NYC
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 January 2014
© NXP N.V. 2014. All rights reserved
15 / 15