s5821 series kpin1010e

PHOTODIODE
Si PIN photodiode
S5821 series
High performance, high reliability Si PIN photodiodes
S5821 series is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. S5821 series
provides high performance and reliability at a low cost.
Features
Applications
l High-speed response
l Wide spectral response
l Low dark current
l Low terminal capacitance
l Optical switch
l Automobile optical sensor
l General photometry
■ General ratings / Absolute maximum ratings
Type No.
S5821
S5821-01
S5821-02
S5821-03
Dimensional
outline/
Window
material *
➀/K
➁/L
➂/K
➃/L
Package
Active
area size
Effective
active area
(mm)
(mm)
(mm2)
Reverse
voltage
VR Max.
(V)
TO-18
φ1.2
1.1
20
Absolute maximum ratings
Power
Operating
Storage
dissipation temperature temperature
P
Topr
Tstg
(mW)
(°C)
(°C)
50
-40 to +100 -55 to +125
■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Terminal
Short
Dark
Temp.
Cut-off
NEP
capacitance
circuit
current
coefficient frequency
VR=10 V
Ct
current
ID
of ID
fc
Type No.
VR=10 V
VR=10 V
Isc
λ=λp
TCID
VR=10 V
(nA)
f=1 MHz
λp 660 nm 780 nm 830 nm 100 lx
(nm)
(nm)
(µA) Typ. Max. (times/°C) (MHz)
(pF)
(W/Hz1/2)
S5821
1.1
S5821-01
12
320 to 1100 960 0.6 0.45 0.52 0.55
0.05 2
1.15
25
3
6.7 × 10-15
S5821-02
1.1
12
S5821-03
* Window material K: borosilicate glass, L: lens type borosilicate glass
Spectral Peak
response sensitivity
range wavelength
λp
λ
1
Si PIN photodiode
■ Spectral response
S5821 series
■ Directivity
20˚
(Typ. Ta=25 ˚C)
0.7
10˚
0˚
10˚
(Typ. Ta=25 ˚C)
20˚
100 %
30˚
30˚
PHOTO SENSITIVITY (A/W)
0.6
80 %
0.5
40˚
0.4
S5821
S5821-02
40˚
60 %
50˚
0.3
50˚
40 %
60˚
0.2
70˚
S5821-01
S5821-03
60˚
70˚
20%
0.1
0
200
400
600
800
80˚
80˚
90˚
90˚
1000
WAVELENGTH (nm)
RELATIVE SENSITIVITY
KPINB0091EA
KPINB0151EA
■ Photo sensitivity temperature characteristic
(Typ.)
+1.5
+10
+1.0
RELATIVE OUTPUT (dB)
TEMPERATURE COEFFICIENT (%/˚C)
■ Frequency response
+0.5
0
-0.5
200
400
600
800
-3
-10
1 MHz
10 MHz
100 MHz
1 GHz
FREQUENCY
WAVELENGTH (nm)
KPINB0152EA
2
0
-20
100 kHz
1000
(Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω, VR=10 V)
KPINB0153EA
Si PIN photodiode
■ Cut-off frequency vs. reverse voltage
100 MHz
10 MHz
1 MHz
1
10
(Typ. Ta=25 ˚C)
1 nA
DARK CURRENT
CUT-OFF FREQUENCY
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C, λ=830 nm, RL=50 Ω)
1 GHz
S5821 series
100
REVERSE VOLTAGE (V)
100 pA
10 pA
1 pA
0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0154EA
KPINB0155EA
■ Terminal capacitance vs. reverse voltage
(Typ. Ta=25 ˚C, f=1 MHz)
TERMINAL CAPACITANCE
100 pF
10 pF
1 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0156EA
3
Si PIN photodiode
S5821 series
■ Dimensional outline (unit: mm)
➁ S5821-01
4.65 ± 0.1
2.3
14
0.45
LEAD
8.5
0.45
LEAD
4.5 ± 0.2
5.4 ± 0.2
3.6 ± 0.2
5.4 ± 0.2
4.7 ± 0.1
2.8
WINDOW
3.0 ± 0.2
2.15 ± 0.3
➀ S5821
2.54 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
CONNECTED TO CASE
KPINA0074EB
4.65 ± 0.1
3.6 ± 0.2
4.7 ± 0.1
2.8
0.45
LEAD
13
0.45
LEAD
5.4 ± 0.2
13
PHOTOSENSITIVE
SURFACE
5.4 ± 0.2
2.8
WINDOW
3.0 ± 0.2
2.15 ± 0.3
➃ S5821-03
4.5 ± 0.2
➂ S5821-02
KPINA0075EA
2.54 ± 0.2
2.54 ± 0.2
CASE
CASE
KPINA0022EB
KPINA0046EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2008 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
4
Cat. No. KPIN1010E02
May 2008 DN