GaAsP photodiodes G5645 G5842 G6262 Diffusion type photodiodes with sensitivity in the short wavelength regions (less affected by 2nd order light) Features Applications Low dark current Analytical instruments Narrow spectral response range UV detection General ratings/Absolute maximum ratings Type No. Dimensional outline/ Window material G5645 G5842 G6262 /K * Package TO-18 Plastic Plastic Active area size Effective active area (mm) (mm2) Reverse voltage VR Max. (V) 0.8 × 0.8 0.58 5 Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (°C) (°C) -30 to +80 -40 to +85 * Borosilicate glass Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type No. G5645 G5842 G6262 Photo sensitivity Spectral Peak S response sensitivity (A/W) range wavelength λ λp GaP LED λp 560 nm (nm) (nm) 0.28 0.05 300 to 580 470 260 to 400 370 0.06 280 to 580 470 0.2 0.05 Short circuit current Isc 1000 lx Min. (nA) 60 45 Typ. (nA) 90 2 65 Dark current ID VR=5 V Max. Temp. Rise time coefficient tf of VR=0 V ID RL=1 kΩ TCID (pA) (times/°C) (μs) 50 1.07 3 www.hamamatsu.com Terminal Shunt capacitance resistance Ct Rsh VR=0 V VR=10 mV f=10 kHz Min. Typ. (pF) (GΩ) (GΩ) 80 10 80 NEP (W/Hz1/2) 2.3 × 10-15 7.6 × 10-15 2.3 × 10-15 1 GaAsP photodiodes G5645, G5842, G6262 Spectral response (Typ. Ta=25 °C) 0.5 0.08 Photo sensitivity (A/W) Photo sensitivity (A/W) 0.4 G5645 0.3 G6262 0.2 0.1 0 200 (Typ. Ta=25 °C) 0.1 G5842 0.06 0.04 0.02 300 400 500 600 700 0 200 800 300 Wavelength (nm) 400 500 Wavelength (nm) KGPDB0029EC KGPDB0001EC Photo sensitivity temperature characteristic (Typ.) +3.0 (Typ. Ta=25 °C, VR=0 V) 10 ms +2.5 1 ms +2.0 Rise time Temperature coefficient (%/°C) Rise time vs. load resistance +1.5 +1.0 100 µs 10 µs +0.5 1 µs 0 -0.5 200 300 400 500 600 700 800 Wavelength (nm) 100 ns 102 103 104 105 106 Load resistance (Ω) KGPDB0030EA KGPDB0031EA 2 GaAsP photodiodes G5645, G5842, G6262 Dark current vs. reverse voltage Shunt resistance vs. ambient temperature (Typ. Ta=25 °C, VR=0 V) 100 pA (Typ. VR=10 mV) 10 TΩ 1 TΩ Dark current Shunt resistance 10 pA 1 pA 100 GΩ 10 GΩ 1 GΩ 100 MΩ 100 fA 0.001 0.01 0.1 1 10 Reverse voltage (V) 10 MΩ -20 0 20 40 60 80 Ambient temperature (°C) KGPDB0032EA KGPDB0033EA Short circuit current linearity (G5645, G6262) 0.8 (Typ. Ta=25 °C, VR=0 V, RL=2 Ω, spot light size= 500 µm, λ=408 nm) Short circuit current (mA) 0.7 0.6 0.5 0.4 0.3 0.3 0.1 0 0 1 2 3 4 5 Light level (mW) KGPDB0008EB 3 GaAsP photodiodes G5645, G5842, G6262 Dimensional outlines (unit: mm) 1.25 ± 0.25 4.0 (3 ×) 0.5 4.0 1.25 ± 0.25 6.5 ± 0.2 14 0.45 LEAD Active area 2.54 3.55 ± 0.2 (3.4) 4.0 5.4 ± 0.2 4.7 ± 0.1 2.4 Window 3.0 ± 0.2 G5842, G6262 3.2 (FILTER) G5645 0.85 N/C Cathode Anode 0.2 1.5 0.65 0.1 2.54 ± 0.2 3.2 (FILTER) +0.2 -0.1 4.0 Photosensitive surface 4.0 KGPDA0004EA Connected to case Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. KGPDA0012EA Information described in this material is current as of April, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KGPD1004E03 Apr. 2011 DN 4