Si photodiode S2551 For visible to infrared precision photometry S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry. Features Applications Long, narrow active area: 1.2 × 29.1 mm Analytical instruments High sensitivity Optical measurement equipment Low capacitance Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 30 -20 to +60 -20 to +80 Unit V °C °C Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Short circuit current Dark current Temperature coefficient of ID Rise time Terminal capacitance Shunt resistance Noise equivalent power Symbol λ λp S Isc ID TCID tr Ct Rsh NEP Condition λ=λp λ=663 nm 100 lx VR=10 mV VR=0 V, RL=1 kΩ VR=0 V, f=10 kHz VR=10 mV VR=0 V, λ=λp Min. 24 0.01 - www.hamamatsu.com Typ. 340 to 1060 920 0.6 0.37 30 1.15 1.4 350 0.03 3.9 × 10-14 Max. 1 - Unit nm nm A/W A/W μA nA times/°C μs pF GΩ W/Hz1/2 1 Si photodiode S2551 Photo sensitivity temperature characteristic Spectral response (Typ. Ta=25 °C) 0.8 (Typ. ) +1.5 Temperature coefficient (%/°C) Photo sensitivity (A/W) 0.7 0.6 0.5 QE=100% 0.4 0.3 0.2 +1.0 +0.5 0 0.1 0 300 400 500 600 700 800 900 -1.5 190 1000 1100 Wavelength (nm) 400 600 800 Wavelength (nm) KSPDB0173EB KSPDB0053EB Rise time vs. load resistance Dark current vs. reverse voltage (Typ. Ta=25 °C, VR=0 V) 1 ms 1 nA Dark current Rise time (Typ. Ta=25 °C) 10 nA 100 µs 10 µs 1 µs 100 ns 10 ns 102 1000 100 pA 10 pA 1 pA 103 104 105 Load resistance (Ω) 100 fA 0.01 0.1 1 10 Reverse voltage (V) KSPDB0174EA KSPDB0175EA 2 Si photodiode S2551 Shunt resistance vs. ambient temperature (Typ. VR=10 mV) 100 GΩ 10 GΩ Shunt resistance 1 GΩ 100 MΩ 10 MΩ 1 MΩ 100 kΩ 10 kΩ 1 kΩ -20 0 20 40 60 80 Ambient temperature (°C) KSPDB0176EB Dimensional outline (unit: mm) 40.0 ± 0.7 13 Active area 1.2 × 29.1 0.5 3.2 ± 0.2 1.2 29.1 0 3.0+- 0.3 33.1 ± 0.7 Resin Photosensitive surface 0.45 Lead 33.1 ± 0.7 The resin potting may extend a maximum of 0.1 mm beyond the upper surface of the package. KSPDA0116EB 3 Si photodiode S2551 Information described in this material is current as of October, 2011. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KSPD1027E03 Oct. 2011 DN 4