s9195 kpin1068e

PHOTODIODE
Si PIN photodiode
S9195
Si PIN photodiode for violet-laser detection
S9195 is a Si PIN photodiode designed to have enhanced sensitivity in the emission wavelength range of violet-lasers. A high-speed
response is achieved despite the large active area.
Features
Applications
l High sensitivity: 0.28 A/W Typ. (λ=405 nm)
l High-speed response: 50 MHz Typ. (VR=10 V)
l Active area: 5.0 × 5.0 mm
l TO-8 metal package
l Violet-laser detection and monitor
■ Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
VR Max.
Topr
Tstg
Value
20
-40 to +100
-55 to +125
Unit
V
°C
°C
■ Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Dark current
Terminal capacitance
Cut-off frequency
Noise equivalent power
Symbol
λ
λp
S
ID
Ct
fc
NEP
Condition
λ=405 nm
VR=10 V
VR=10 V, f=1 MHz
VR=10 V, RL=50 Ω
λ=405 nm, -3 dB
VR=10 V, λ=λp
Min.
0.25
-
Typ.
320 to 1000
840
0.28
0.5
60
Max.
5
80
Unit
nm
nm
A/W
nA
pF
30
50
-
MHz
-
W/Hz1/2
2.5 × 10
-14
1
Si PIN photodiode
■ Photo sensitivity temperature characteristic
■ Spectral response
(Typ. Ta=25 ˚C)
0.7
(Typ.)
TEMPERATURE COEFFICIENT (%/˚C)
+1.5
PHOTO SENSITIVITY (A/W)
0.6
QE=100 %
0.5
0.4
0.3
0.2
0.1
0
200
400
600
+0.5
0
-0.5
200
1000
800
+1.0
WAVELENGTH (nm)
400
600
800
1000
WAVELENGTH (nm)
KPINB0290EA
KPINB0289EA
■ Terminal capacitance vs. reverse voltage
■ Dark current vs. reverse voltage
(Typ. Ta=25 ˚C)
DARK CURRENT
1 nA
100 pA
10 pA
0.1
1
10
(Typ. Ta=25 ˚C)
1 nF
TERMINAL CAPACITANCE
10 nA
1 pA
0.01
S9195
100 pF
10 pF
1 pF
0.1
100
1
10
100
REVERSE VOLTAGE (V)
REVERSE VOLTAGE (V)
KPINB0292EA
KPINB0291EA
■ Dimensional outline (unit: mm)
13.9 ± 0.2
PHOTOSENSITIVE
SURFACE
1.9
10.5 ± 0.1
(15)
5.0 ± 0.2
12.35 ± 0.1
0.45
LEAD
7.5 ± 0.2 ANODE TERMINAL MARK
1.4
COMMON TO CASE
The borosilicate glass window may extend
a maximum of 0.1 mm beyond the upper
surface of the cap.
KPINA0094EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1068E01
Jan. 2004 DN