PHOTODIODE 76-element Si photodiode array S3954 High UV sensitivity photodiode array mounted in DIP Features Applications l High UV sensitivity: QE 75 % (λ=200 nm) l Half pitch 78-lead DIP l Element size: 3.175 × 0.3175 mm l Entire active area: 3.175 × 25.6875 mm l Element pitch: 0.3425 mm l Spectrophotometers ■ Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 5 -20 to +60 -20 to +80 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Symbol λ λp Photo sensitivity S Dark current ID Temperature coefficient of dark current λ=200 nm λ=633 nm λ=λp per 1 element VR=10 mV TCID Rise time tr Terminal capacitance Ct Noise equivalent power Condition NEP VR=0 V, RL=1 kΩ λ=655 nm per 1 element VR=0 V, f=10 kHz VR=0 V, λ=λp Min. - Typ. 190 to 1100 960 0.10 0.43 0.58 Max. - - 0.1 30 pA - 1.12 - times/°C - 0.4 - µs - 150 - pF - W/Hz1/2 - 7.0 × 10 -16 Unit nm nm A/W 1 76-element Si photodiode array ■ Spectral response ■ Dark current vs. reverse voltage (Typ. Ta=25 ˚C) 0.8 ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 100 pA S3954 (Typ. Ta=25 ˚C) 1 nF TERMINAL CAPACITANCE QE=100 % 10 pA 0.6 DARK CURRENT PHOTO SENSITIVITY (A/W) 0.7 0.5 0.4 0.3 1 pA 100 fA 0.2 QE=50 % 0.1 0 190 400 600 800 1000 10 fA 0.01 1200 0.1 1 KMPDB0130EA 15.5 ± 0.3 41 40 CH 76 15.24 ± 0.25* 0.25 PHOTOSENSITIVE SURFACE 15.11 ± 0.25 78 77 38 39 PIN No. 1 2 (4.5) 2.8 ± 0.3 1.48 ± 0.2 0.46 1.27 P 1.27 × 38 = 48.26 KMPDA0115EA 3.175 ■ Details of elements (unit: mm) 0.025 0.3175 1 10 KMPDB0132EA ■ Pin connection 50.8 ± 0.6 CH 1 0.1 REVERSE VOLTAGE (V) KMPDB0131EA ■ Dimensional outline (unit: mm) ACTIVE AREA 25.6875 10 pF 0.01 10 REVERSE VOLTAGE (V) WAVELENGTH (nm) 3.175 100 pF 0.025 Pin No. Element No. 1 KC 2 2 3 4 4 6 5 8 6 10 7 12 8 14 9 16 10 18 11 20 12 22 13 24 14 26 15 28 16 30 17 32 18 34 19 36 20 38 21 40 22 42 23 44 24 46 25 48 26 50 27 52 28 54 29 56 30 58 31 60 32 62 33 64 34 66 35 68 36 70 37 72 38 74 39 76 Pin No. Element No. 40 KC 41 75 42 73 43 71 44 69 45 67 46 65 47 63 48 61 49 59 50 57 51 55 52 53 53 51 54 49 55 47 56 45 57 43 58 41 59 39 60 37 61 35 62 33 63 31 64 29 65 27 66 25 67 23 68 21 69 19 70 17 71 15 72 13 73 11 74 9 75 7 76 5 77 3 78 1 KMPDA0116EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1041E02 Aug. 2006 DN